公开(公告)号：US09729140B2

公开(公告)日：2017-08-08

申请号：US14197818

申请日：2014-03-05

Applicant: Analog Devices, Inc.

Inventor： JoAnn Close ,  Jennifer W. Pierdomenico ,  David Hall Whitney

IPC: H03K17/60 ,  H03K17/56 ,  H03K17/0812

CPC classification number: H03K17/56 ,  H03K17/0812 ,  H03K17/60

Abstract: Apparatus and methods to increase the range of a signal processing circuit. A system uses floating bias circuits coupled to a signal processing circuit to increase the range of power supplies that can be used with the signal processing circuit, while maintaining the components of the signal processing circuit within a breakdown voltage threshold. As the voltage level of the data signal varies, the voltage level of the floating bias circuits varies as well.

公开(公告)号：US20130330884A1

公开(公告)日：2013-12-12

申请号：US13966938

申请日：2013-08-14

Applicant: Analog Devices, Inc.

Inventor： Javier A. Salcedo ,  David Hall Whitney

IPC: H01L21/8222

CPC classification number: H01L21/8222 ,  H01L27/0262

Abstract: Apparatus and methods for electronic circuit protection under high stress operating conditions are provided. In one embodiment, an apparatus includes a substrate having a first p-well, a second p-well adjacent the first p-well, and an n-type region separating the first and second p-wells. An n-type active area is over the first p-well and a p-type active area is over the second p-well. The n-type and p-type active areas are electrically connected to a cathode and anode of a high reverse blocking voltage (HRBV) device, respectively. The n-type active area, the first p-well and the n-type region operate as an NPN bipolar transistor and the second p-well, the n-type region, and the first p-well operate as a PNP bipolar transistor. The NPN bipolar transistor defines a relatively low forward trigger voltage of the HRBV device and the PNP bipolar transistor defines a relatively high reverse breakdown voltage of the HRBV device.

Abstract translation: 提供了在高应力操作条件下进行电子电路保护的装置和方法。 在一个实施例中，一种装置包括具有第一p阱，邻近第一p阱的第二p阱和分离第一和第二p阱的n型区的衬底。 n型有源区域在第一p阱上方，p型有源区域超过第二个p阱。 n型和p型有源区分别电连接到高反向阻断电压（HRBV）器件的阴极和阳极。 n型有源区，第一p阱和n型区用作NPN双极晶体管，第二p阱，n型区和第一p阱用作PNP双极晶体管。 NPN双极晶体管定义了HRBV器件的相对低的正向触发电压，PNP双极晶体管限定了HRBV器件的相对高的反向击穿电压。

公开(公告)号：US20150256170A1

公开(公告)日：2015-09-10

申请号：US14197818

申请日：2014-03-05

Applicant: Analog Devices, Inc.

Inventor： JoAnn Close ,  John W. Pierdomenico ,  David Hall Whitney

IPC: H03K17/56 ,  H03K17/60

CPC classification number: H03K17/56 ,  H03K17/0812 ,  H03K17/60

Abstract: Apparatus and methods to increase the range of a signal processing circuit. A system uses floating bias circuits coupled to a signal processing circuit to increase the range of power supplies that can be used with the signal processing circuit, while maintaining the components of the signal processing circuit within a breakdown voltage threshold. As the voltage level of the data signal varies, the voltage level of the floating bias circuits varies as well.

Abstract translation: 增加信号处理电路范围的装置和方法。 系统使用耦合到信号处理电路的浮动偏置电路来增加可与信号处理电路一起使用的电源的范围，同时将信号处理电路的组件保持在击穿电压阈值内。 随着数据信号的电压电平变化，浮置偏置电路的电压电平也会变化。

公开(公告)号：US08772091B2

公开(公告)日：2014-07-08

申请号：US13966938

申请日：2013-08-14

Applicant: Analog Devices, Inc.

Inventor： Javier A Salcedo ,  David Hall Whitney

IPC: H01L21/8222

CPC classification number: H01L21/8222 ,  H01L27/0262

Abstract: Apparatus and methods for electronic circuit protection under high stress operating conditions are provided. In one embodiment, an apparatus includes a substrate having a first p-well, a second p-well adjacent the first p-well, and an n-type region separating the first and second p-wells. An n-type active area is over the first p-well and a p-type active area is over the second p-well. The n-type and p-type active areas are electrically connected to a cathode and anode of a high reverse blocking voltage (HRBV) device, respectively. The n-type active area, the first p-well and the n-type region operate as an NPN bipolar transistor and the second p-well, the n-type region, and the first p-well operate as a PNP bipolar transistor. The NPN bipolar transistor defines a relatively low forward trigger voltage of the HRBV device and the PNP bipolar transistor defines a relatively high reverse breakdown voltage of the HRBV device.

Abstract translation: 提供了在高应力操作条件下进行电子电路保护的装置和方法。 在一个实施例中，一种装置包括具有第一p阱，邻近第一p阱的第二p阱和分离第一和第二p阱的n型区的衬底。 n型有源区域在第一p阱上方，p型有源区域超过第二个p阱。 n型和p型有源区分别电连接到高反向阻断电压（HRBV）器件的阴极和阳极。 n型有源区，第一p阱和n型区用作NPN双极晶体管，第二p阱，n型区和第一p阱用作PNP双极晶体管。 NPN双极晶体管定义了HRBV器件的相对低的正向触发电压，PNP双极晶体管限定了HRBV器件的相对高的反向击穿电压。