公开(公告)号：US06242347B1

公开(公告)日：2001-06-05

申请号：US09163711

申请日：1998-09-30

申请人： Anand Vasudev ,  Toshio Itoh ,  Ramanujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

发明人： Anand Vasudev ,  Toshio Itoh ,  Ramanujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

IPC分类号： H01L2144

CPC分类号： H01L21/67028 ,  Y10S438/905 ,  Y10S438/906

摘要： A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.

摘要翻译： 一种半导体沉积室的原位清洗方法，用于沉积诸如钛或氮化钛的半导体材料，包括在晶片之间，在升高的温度下将氯气引入室中，用惰性气体吹扫室，并排空 在引入下一个晶圆之前。 晶片清洗过程之间的两阶段是通过在升高的温度下将氯引入室中，之后启动等离子体而不去除氯，用惰性气体吹扫室并在引入下一个晶片之前对其进行排空。 在一个优选实施例中，在利用该腔室以沉积这种材料之前，在室的内表面上沉积薄的钛保护膜。 在每次两级清洁之后补充保护层。

公开(公告)号：US06482746B2

公开(公告)日：2002-11-19

申请号：US09874882

申请日：2001-06-05

申请人： Anand Vasudev ,  Toshio Itoh ,  Ramamujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

发明人： Anand Vasudev ,  Toshio Itoh ,  Ramamujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

IPC分类号： H01L21302

CPC分类号： H01L21/67028 ,  Y10S438/905 ,  Y10S438/906

摘要： A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner sur aces of the chamber prior to utilizing the chamber for he deposition of such material. The protective layer is replenished following each two-stage cleaning.

摘要翻译： 一种半导体沉积室的原位清洗方法，用于沉积诸如钛或氮化钛的半导体材料，包括在晶片之间，在升高的温度下将氯气引入室中，用惰性气体吹扫室，并排空 在引入下一个晶圆之前。 晶片清洗过程之间的两阶段是通过在升高的温度下将氯引入室中，之后启动等离子体而不去除氯，用惰性气体吹扫室并在引入下一个晶片之前对其进行排空。 在一个优选实施例中，在使用该室以沉积这种材料之前，将薄的钛保护膜沉积在室的内侧。 在每次两级清洁之后补充保护层。

公开(公告)号：US06297152B1

公开(公告)日：2001-10-02

申请号：US08764471

申请日：1996-12-12

申请人： Toshio Itoh ,  Mei Chang

发明人： Toshio Itoh ,  Mei Chang

IPC分类号： H01L2144

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/42 ,  H01L21/28061 ,  H01L21/28518

摘要： A multiple step chemical vapor deposition process for depositing a tungsten silicide layer on a substrate. A first step of the deposition process includes a pretreatment step in which WF6 is introduced into a deposition chamber. Next, the introduction of WF6 is stopped and a silicon-containing gas, e.g., SiH4, is introduced into the chamber. Finally, during a third step, the SiH4 flow is stopped and DCS and WF6 are introduced into the chamber to deposit a tungsten silicide layer on the substrate.

摘要翻译： 用于在硅衬底上沉积硅化钨层的多步化学气相沉积工艺。 沉积工艺的第一步包括将WF6引入沉积室的预处理步骤。 接下来，停止引入WF6，并且将含硅气体，例如SiH 4引入室中。 最后，在第三步骤中，停止SiH 4流动，并将DCS和WF6引入室中，以在衬底上沉积硅化钨层。

公开(公告)号：US20060292864A1

公开(公告)日：2006-12-28

申请号：US11458852

申请日：2006-07-20

申请人： Michael Yang ,  Toshio Itoh ,  Ming Xi

发明人： Michael Yang ,  Toshio Itoh ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： C23C16/45531 ,  C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/515 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/02153 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856

摘要： In one embodiment, a method for forming a metal-containing material on a substrate is provided which includes forming a metal containing barrier layer on a substrate by a plasma-enhanced cyclical vapor deposition process, exposing the substrate to a soak process, and depositing a conductive material on the substrate by a second vapor deposition process. The substrate may be exposed to a silicon-containing compound (e.g., silane) during the soak process. In some examples, a metallic nitride layer may be deposited subsequent to the soak process and prior to the second vapor deposition process. In other examples, the metal containing barrier layer contains metallic titanium, the metallic nitride layer contains titanium nitride, and the conductive material contains tungsten or copper. The plasma-enhanced cyclical vapor deposition process may further include exposing the substrate to a nitrogen precursor, such as nitrogen, hydrogen, a nitrogen/hydrogen mixture, ammonia, hydrazine, or derivatives thereof.

摘要翻译： 在一个实施例中，提供了一种用于在衬底上形成含金属材料的方法，其包括通过等离子体增强循环气相沉积工艺在衬底上形成含金属的阻挡层，将衬底暴露于浸泡工艺，并沉积 通过第二气相沉积工艺在衬底上形成导电材料。 在浸泡过程期间，可将基底暴露于含硅化合物（例如硅烷）。 在一些实例中，金属氮化物层可以在浸泡工艺之后并在第二气相沉积工艺之前沉积。 在其他实例中，含金属阻挡层含有金属钛，金属氮化物层含有氮化钛，导电材料含有钨或铜。 等离子体增强的循环气相沉积方法还可以包括将底物暴露于氮前体，例如氮，氢，氮/氢混合物，氨，肼或其衍生物。

公开(公告)号：US20050277290A1

公开(公告)日：2005-12-15

申请号：US11151699

申请日：2005-06-13

申请人： Michael Yang ,  Toshio Itoh ,  Ming Xi

发明人： Michael Yang ,  Toshio Itoh ,  Ming Xi

IPC分类号： C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/515 ,  H01J37/32 ,  H01L21/285 ,  H01L21/312 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： C23C16/45531 ,  C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/515 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/02153 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856

摘要： Embodiments of the invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds such as a titanium precursor and a reductant, providing one or more cycles of a second set of compounds such as the titanium precursor and a silicon precursor and providing one or more cycles of a third set of compounds such as the titanium precursor and a nitrogen precursor. Another embodiment includes depositing a titanium layer on a substrate, depositing a passivation layer containing titanium silicide, titanium silicon nitride or combinations thereof over the titanium layer and subsequently depositing a titanium nitride layer over the passivation layer. Still another embodiment comprises depositing a titanium layer on a substrate, soaking the titanium layer with a silicon precursor and subsequently depositing a titanium nitride layer thereon.

摘要翻译： 本发明的实施方案一般涉及钛和氮化钛层的集成的装置和方法。 一个实施方案包括提供第一组化合物例如钛前体和还原剂的一个或多个循环，提供第二组化合物例如钛前体和硅前体的一个或多个循环，并提供一个或多个循环的 第三组化合物如钛前体和氮前体。 另一实施例包括在衬底上沉积钛层，在钛层上沉积含有硅化钛，氮化钛或其组合的钝化层，随后在钝化层上沉积氮化钛层。 另一个实施例包括在衬底上沉积钛层，用钛前体浸泡钛层，随后在其上沉积氮化钛层。

公开(公告)号：US06911391B2

公开(公告)日：2005-06-28

申请号：US10118664

申请日：2002-04-08

申请人： Michael X. Yang ,  Toshio Itoh ,  Ming Xi

发明人： Michael X. Yang ,  Toshio Itoh ,  Ming Xi

IPC分类号： C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/515 ,  H01J37/32 ,  H01L21/285 ,  H01L21/312 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45531 ,  C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/515 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/02153 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856

摘要： Embodiments of the present invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds, providing one or more cycles of a second set of compounds, and providing one or more cycles of a third set of compounds. One cycle of the first set of compounds includes introducing a titanium precursor and a reductant. One cycle of the second set of compounds includes introducing the titanium precursor and a silicon precursor. One cycle of the third set of compounds includes introducing the titanium precursor and a nitrogen precursor. Another embodiment includes depositing a titanium layer utilizing titanium halide. Then, a passivation layer is deposited over the titanium layer utilizing titanium halide. The passivation layer may comprise titanium silicide, titanium silicon nitride, and combinations thereof. Then, a titanium nitride layer is deposited over the passivation layer utilizing titanium halide. Still another embodiment comprises depositing a titanium layer over a surface of a substrate. Then, the titanium layer is treated with a soak with a silicon precursor at a substrate temperature of about 550° C. or less to form a treated titanium layer. Then, a titanium nitride layer is deposited over the treated titanium layer.

摘要翻译： 本发明的实施例一般涉及钛和氮化钛层的集成装置和方法。 一个实施方案包括提供第一组化合物的一个或多个循环，提供第二组化合物的一个或多个循环，以及提供第三组化合物的一个或多个循环。 第一组化合物的一个循环包括引入钛前体和还原剂。 第二组化合物的一个循环包括引入钛前体和硅前体。 第三组化合物的一个循环包括引入钛前体和氮前体。 另一实施例包括使用卤化钛沉积钛层。 然后，使用卤化钛在钝化层上沉积钝化层。 钝化层可以包括硅化钛，氮化钛钛及其组合。 然后，利用卤化钛在氮化钛层上沉积钝化层。 另一个实施例包括在衬底的表面上沉积钛层。 然后，在约550℃或更低的衬底温度下用硅前体浸泡处理钛层以形成经处理的钛层。 然后，在处理的钛层上沉积氮化钛层。

公开(公告)号：US06214211B1

公开(公告)日：2001-04-10

申请号：US09292610

申请日：1999-04-15

申请人： Toshio Itoh

发明人： Toshio Itoh

IPC分类号： C10G1102

CPC分类号： C10G11/05 ,  B01J21/04 ,  B01J29/084 ,  B01J29/088 ,  B01J35/1061 ,  B01J35/108 ,  B01J37/0009 ,  B01J37/0045 ,  B01J2229/16 ,  B01J2229/36 ,  B01J2229/42

摘要： A catalytic cracking catalyst composition comprising (a) a spherical boehmite gel alumina, (b) a zeolite, (c) a clay mineral and (d) a binder; a catalytic cracking catalyst produced by spray-drying a slurry containing the catalytic cracking catalyst composition to obtain a spherical catalyst, and then calcining the spherical catalyst; a method of catalytically cracking a heavy oil comprising catalytically cracking a heavy oil in the presence of the catalytic cracking catalyst.

摘要翻译： 一种催化裂化催化剂组合物，其包含（a）球形勃姆石凝胶氧化铝，（b）沸石，（c）粘土矿物和（d）粘合剂; 通过喷雾干燥含有催化裂化催化剂组合物的浆料得到球形催化剂，然后煅烧球形催化剂而制备的催化裂化催化剂; 一种在催化裂化催化剂存在下催化裂解重油的方法，包括催化裂解重油。

公开(公告)号：US4823755A

公开(公告)日：1989-04-25

申请号：US137528

申请日：1987-12-23

申请人： Katsuhiko Hirose ,  Hiroshi Noguchi ,  Toyokazu Baika ,  Kingo Horii ,  Hideo Nagaosa ,  Toshio Tanahashi ,  Toshio Itoh

发明人： Katsuhiko Hirose ,  Hiroshi Noguchi ,  Toyokazu Baika ,  Kingo Horii ,  Hideo Nagaosa ,  Toshio Tanahashi ,  Toshio Itoh

IPC分类号： F02D41/04 ,  F02D41/24 ,  F02D41/26 ,  F02M51/00

CPC分类号： F02B25/145 ,  F02D41/04 ,  F02D41/2416 ,  F02D41/263

摘要： In a two stroke fuel injection type internal combustion engine provided with intake and exhaust valves, a basic amount of fuel to be injected is calculated in accordance with an engine load and engine speed. Values of a factor corresponding to a ratio of air captured by an engine cylinder for combustion to the total amount of air introduced into the engine are stored in a memory in accordance with combinations of an engine load and engine speed. A value of a captured air factor corresponding to a detected combination of an engine load and speed is calculated by a map interpolation. The basic amount is corrected by the captured air factor so that a desired air-fuel ratio is obtained. The captured air factor may be further corrected in accordance with a secondary engine condition, other than an engine load and speed, such as a cooling water temperature, intake air temperature, atmospheric air temperature, atmospheric air pressure, exhaust gas temperature, or intake pressure.

摘要翻译： 在具有进气门和排气门的二冲程燃料喷射式内燃机中，根据发动机负荷和发动机转速来计算要喷射的基本燃料量。 根据发动机负荷和发动机转速的组合，与燃烧用发动机气缸捕获的空气与引入发动机的总空气量的比例对应的值的值存储在存储器中。 通过映射内插计算与检测到的发动机负载和速度的组合相对应的捕获空气因子的值。 通过捕获的空气系数来校正基本量，从而获得所需的空燃比。 捕获的空气因子可以根据二次发动机状态进一步校正，除了发动机负载和速度，例如冷却水温度，进气温度，大气温度，大气压力，排气温度或进气压力 。

公开(公告)号：US07691767B2

公开(公告)日：2010-04-06

申请号：US11623915

申请日：2007-01-17

申请人： Kenichi Wakui ,  Kinsho Furusawa ,  Akio Suwa ,  Toshio Itoh ,  Hisao Nagashima

发明人： Kenichi Wakui ,  Kinsho Furusawa ,  Akio Suwa ,  Toshio Itoh ,  Hisao Nagashima

IPC分类号： B01J29/00 ,  C07C4/02 ,  C10G11/00

CPC分类号： C10G11/05 ,  B01J29/084 ,  B01J29/405 ,  B01J29/80 ,  B01J37/0045 ,  B01J2229/18 ,  B01J2229/42 ,  C10G2300/301 ,  C10G2400/20

摘要： Provided are a catalyst which inhibits light paraffins form being produced in catalytic cracking of heavy hydrocarbons and which effectively produces olefins and a process in which the above catalyst is used to produce olefins from heavy hydrocarbons at a high yield. The catalyst is a catalytic cracking catalyst for catalytically cracking a hydrocarbon raw material, comprising (A) pentasil type zeolite modified with a rare earth element and zirconium and (B) faujasite type zeolite, and the process is a production process for olefin and a fuel oil, comprising bringing a heavy oil containing 50 mass % or more of a hydrocarbon fraction having a boiling point of 180° C. or higher into contact with the catalyst described above to crack it.

摘要翻译： 提供一种催化剂，其抑制在重质烃的催化裂化中产生的轻链烷烃形式，并且有效地产生烯烃，以及使用上述催化剂以高产率从重质烃生产烯烃的方法。 该催化剂是用于催化裂解烃原料的催化裂化催化剂，其包含（A）用稀土元素和锆改性的五面体型沸石和（B）八面沸石型沸石，该方法是烯烃和燃料的生产方法 油，其包含使含有50质量％以上的沸点为180℃以上的烃馏分的重油与上述催化剂接触以使其破裂。

公开(公告)号：US20100056361A1

公开(公告)日：2010-03-04

申请号：US12444508

申请日：2007-10-04

申请人： Noriya Izu ,  Ichiro Matsubara ,  Toshio Itoh ,  Woosuck Shin

发明人： Noriya Izu ,  Ichiro Matsubara ,  Toshio Itoh ,  Woosuck Shin

IPC分类号： B01J31/06 ,  C08K3/22

CPC分类号： B01J13/14 ,  B82Y30/00 ,  C01B13/32 ,  C01F17/0043 ,  C01G9/02 ,  C01G99/006 ,  C01P2002/72 ,  C01P2002/82 ,  C01P2002/88 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/32 ,  C01P2004/52 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/22 ,  C09C3/10

摘要： The present invention is to provide a process for producing a dispersion of fine core/shell type metal oxide particles and the dispersion thereby produced, the present invention are a process for producing a dispersion of fine core/shell type metal oxide particles comprising the steps of mixing a metal salt and a polymer in an organic solvent to obtain a mixture and heating this mixture under reflux at a prescribed temperature to precipitate metal oxide, wherein the metal salt is a nitrate salt or acetate salt and the particle diameter of the fine core/shell type metal oxide particles is adjusted using the molecular weight of the polymer, and a dispersion of fine core/shell type metal oxide particles obtained by the process, which does not undergo sedimentation even after standing for at least one day, and exhibits long-term stability, and a powder thereof.

摘要翻译： 本发明提供一种核/壳型金属氧化物微粒分散体的制造方法及其制造的分散体，本发明是一种核/壳型金属氧化物微粒分散体的制造方法，其特征在于， 将金属盐和聚合物在有机溶剂中混合以获得混合物，并在规定温度下将该混合物加热回流以沉淀金属氧化物，其中金属盐为硝酸盐或乙酸盐，细芯/ 使用聚合物的分子量调节壳型金属氧化物粒子，通过该方法获得的细芯/壳型金属氧化物粒子的分散体，即使在静置至少一天后也不会沉降， 长期稳定性及其粉末。