公开(公告)号：US20070181057A1

公开(公告)日：2007-08-09

申请号：US11346804

申请日：2006-02-03

申请人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

发明人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

IPC分类号： C30B23/00 ,  C23C16/00 ,  C30B25/00 ,  C30B28/14

CPC分类号： C23C16/452 ,  C23C16/0236 ,  C23C16/505 ,  H01L21/31116 ,  H01L21/67069

摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

摘要翻译： 公开了一种外延沉积工艺，其包括干蚀刻工艺，随后进行外延沉积工艺。 干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。 将气体混合物引入等离子体空腔中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。 反应气体进入处理室并与基板反应，形成薄膜。 将衬底加热以蒸发薄膜并暴露外延表面。 外延表面基本上不含氧化物。 然后使用外延沉积在外延表面上形成外延层。

公开(公告)号：US07494545B2

公开(公告)日：2009-02-24

申请号：US11346804

申请日：2006-02-03

申请人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

发明人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

IPC分类号： C30B25/12

CPC分类号： C23C16/452 ,  C23C16/0236 ,  C23C16/505 ,  H01L21/31116 ,  H01L21/67069

摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

摘要翻译： 公开了一种外延沉积工艺，其包括干蚀刻工艺，随后进行外延沉积工艺。 干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。 将气体混合物引入等离子体空腔中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。 反应气体进入处理室并与基板反应，形成薄膜。 将衬底加热以蒸发薄膜并暴露外延表面。 外延表面基本上不含氧化物。 然后使用外延沉积在外延表面上形成外延层。

公开(公告)号：US07560352B2

公开(公告)日：2009-07-14

申请号：US11378101

申请日：2006-03-17

申请人： David K. Carlson ,  Satheesh Kuppurao ,  Errol Antonio C. Sanchez ,  Howard Beckford ,  Yihwan Kim

发明人： David K. Carlson ,  Satheesh Kuppurao ,  Errol Antonio C. Sanchez ,  Howard Beckford ,  Yihwan Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/7834 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76243 ,  H01L21/823814 ,  H01L21/8249 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848 ,  Y10S438/969

摘要： A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.

摘要翻译： 在衬底表面上外延形成含硅材料的方法通过调节处理室的温度和压力，利用含卤素气体作为蚀刻气体以及载气。 使用HCl作为含卤素气体是有利的，因为通过调节室压力可以容易地将HCl从载气转化为蚀刻气体。

公开(公告)号：US08728944B2

公开(公告)日：2014-05-20

申请号：US13177409

申请日：2011-07-06

申请人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

发明人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

IPC分类号： H01L21/311

CPC分类号： H01L21/02052 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/67109 ,  H01L21/6719

摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.

摘要翻译： 本发明的实施方案一般涉及从基底表面去除污染物和天然氧化物的方法。 所述方法通常包括将其上具有氧化物层的衬底暴露于氧化源。 氧化源氧化氧化层下面的衬底的上部以形成厚度增加的氧化物层。 然后去除具有增加的厚度的氧化物层以暴露衬底的干净的表面。 去除氧化物层通常包括去除存在于氧化物层中和氧化物层上的污染物，特别是存在于氧化物层和衬底的界面处的污染物。 然后可以在衬底的清洁表面上形成外延层。

公开(公告)号：US20120034761A1

公开(公告)日：2012-02-09

申请号：US13177409

申请日：2011-07-06

申请人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

发明人： Satheesh Kuppurao ,  Manish Hemkar ,  Vinh Tran ,  Yihwan Kim

IPC分类号： H01L21/322

CPC分类号： H01L21/02052 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/67109 ,  H01L21/6719

摘要： Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.

摘要翻译： 本发明的实施方案一般涉及从基底表面去除污染物和天然氧化物的方法。 所述方法通常包括将其上具有氧化物层的衬底暴露于氧化源。 氧化源氧化氧化层下面的衬底的上部以形成厚度增加的氧化物层。 然后去除具有增加的厚度的氧化物层以暴露衬底的干净的表面。 去除氧化物层通常包括去除存在于氧化物层中和氧化物层上的污染物，特别是存在于氧化物层和衬底的界面处的污染物。 然后可以在衬底的清洁表面上形成外延层。

公开(公告)号：US20060166414A1

公开(公告)日：2006-07-27

申请号：US11378101

申请日：2006-03-17

申请人： David Carlson ,  Satheesh Kuppurao ,  Errol Antonio Sanchez ,  Howard Beckford ,  Yihwan Kim

发明人： David Carlson ,  Satheesh Kuppurao ,  Errol Antonio Sanchez ,  Howard Beckford ,  Yihwan Kim

IPC分类号： H01L21/84 ,  H01L21/8238 ,  H01L21/336 ,  H01L21/20 ,  H01L21/31

CPC分类号： H01L29/7834 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76243 ,  H01L21/823814 ,  H01L21/8249 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848 ,  Y10S438/969

摘要： A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.

公开(公告)号：US09058988B2

公开(公告)日：2015-06-16

申请号：US12717266

申请日：2010-03-04

申请人： Jean R. Vatus ,  Jinsong Tang ,  Yihwan Kim ,  Satheesh Kuppurao ,  Errol Sanchez

发明人： Jean R. Vatus ,  Jinsong Tang ,  Yihwan Kim ,  Satheesh Kuppurao ,  Errol Sanchez

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/24

CPC分类号： H01L21/02538 ,  C23C16/0245 ,  C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02661

摘要： Methods of depositing layers having reduced interfacial contamination are disclosed herein. The inventive methods may advantageously reduce contamination at the interface between deposited layers, for example, between a deposited layer and an underlying substrate or film. In some embodiments, a method of depositing a layer may include annealing a silicon-containing layer having a first layer disposed thereon in a reducing atmosphere; removing the first layer using an etching process to expose the silicon-containing layer after annealing; and depositing a second layer on the exposed silicon-containing layer.

摘要翻译： 本文公开了沉积具有减小的界面污染的层的方法。 本发明的方法可以有利地减少沉积层之间的界面处的污染，例如沉积层和下面的基底或膜之间的污染。 在一些实施例中，沉积层的方法可以包括在还原气氛中退火其上设置有第一层的含硅层; 使用蚀刻工艺除去第一层，以在退火后露出含硅层; 以及在暴露的含硅层上沉积第二层。

公开(公告)号：US07772074B2

公开(公告)日：2010-08-10

申请号：US11874336

申请日：2007-10-18

申请人： Zhiyuan Ye ,  Andrew Lam ,  Saurabh Chopra ,  Yihwan Kim

发明人： Zhiyuan Ye ,  Andrew Lam ,  Saurabh Chopra ,  Yihwan Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/7848 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02667 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636

摘要： Processes for non-selectively forming one or more conformal silicon-containing epitaxial layers on recess corners are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of a non-selective epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source such as silane and a higher order silane, followed by heating the substrate to promote solid phase epitaxial growth.

摘要翻译： 公开了在凹陷角上非选择性地形成一个或多个适形的含硅外延层的工艺。 具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。 在具体实施方案中，非选择性外延层的形成包括将处理室中的衬底暴露于包括诸如硅烷和高级硅烷的硅源的沉积气体，然后加热衬底以促进固相外延生长。

公开(公告)号：US20090104739A1

公开(公告)日：2009-04-23

申请号：US11874336

申请日：2007-10-18

申请人： Zhiyuan Ye ,  Andrew Lam ,  Saurabh Chopra ,  Yihwan Kim

发明人： Zhiyuan Ye ,  Andrew Lam ,  Saurabh Chopra ,  Yihwan Kim

IPC分类号： H01L21/00 ,  H01L21/336

CPC分类号： H01L29/7848 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02667 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636

摘要： Processes for non-selectively forming one or more conformal silicon-containing epitaxial layers on recess corners are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of a non-selective epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source such as silane and a higher order silane, followed by heating the substrate to promote solid phase epitaxial growth.

摘要翻译： 公开了在凹陷角上非选择性地形成一个或多个适形的含硅外延层的工艺。 具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。 在具体实施方案中，非选择性外延层的形成包括将处理室中的衬底暴露于包括诸如硅烷和高级硅烷的硅源的沉积气体，然后加热衬底以促进固相外延生长。

公开(公告)号：US09064960B2

公开(公告)日：2015-06-23

申请号：US11669550

申请日：2007-01-31

申请人： Andrew Lam ,  Yihwan Kim

发明人： Andrew Lam ,  Yihwan Kim

IPC分类号： C30B25/04 ,  H01L29/78 ,  C30B23/04 ,  H01L21/02 ,  H01L29/165 ,  H01L29/66 ,  C30B35/00 ,  H01L21/8238

CPC分类号： H01L29/7834 ,  C30B23/04 ,  C30B25/04 ,  C30B35/00 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7848

摘要： Methods of selectively and epitaxially forming a silicon-containing material on a substrate surface contained within a process chamber are provided. In one or more embodiments, the pressure in the process chamber is reduced during deposition of material on the substrate and increased during etching of material from the substrate. According to an embodiment, process gases are flowed into the chamber through first zone and a second zone to provide a ratio of the amount of gas flowed to the first zone and the amount of gas flowed to the second zone. In one or more embodiments, the first zone is an inner radial zone and the second zone is an outer radial zone, and ratio of inner zone gas flow to outer zone gas flow is less during deposition than during etching. According to one or more embodiments, the selective epitaxial process includes repeating a cycle of a deposition and then an etching process, and an optional purge until the desired thickness of an epitaxial layer is grown.

摘要翻译： 提供在处理室内包含的衬底表面上选择性地和外延地形成含硅材料的方法。 在一个或多个实施例中，在材料沉积在衬底上时，处理室中的压力降低，并且在从衬底蚀刻材料期间增加。 根据实施例，工艺气体通过第一区域和第二区域流入腔室，以提供流入第一区域的气体量与流向第二区域的气体的量的比率。 在一个或多个实施例中，第一区域是内部径向区域，第二区域是外部径向区域，并且内部区域气体流与外部区域气体流量的比例在沉积期间比在蚀刻期间更小。 根据一个或多个实施例，选择性外延工艺包括重复沉积周期，然后重复蚀刻工艺，以及任选的清洗直到生长外延层的期望厚度。