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公开(公告)号：US08279577B2
公开(公告)日：2012-10-02
申请号：US12849012
申请日：2010-08-02
申请人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
发明人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
IPC分类号： H01T23/00
CPC分类号： C23C14/564 , C23C16/4404 , H01J37/16 , H01J37/32504 , H01J37/32862 , H01J37/32871 , H01J2237/022 , H01L21/6875 , H01L21/68757 , Y10T428/24 , Y10T428/31678
摘要： A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel.
摘要翻译： 用于衬底处理室的支撑件包括具有衬底接收表面的卡盘，以及包括上壁的基座，该上壁包括凹槽，所述凹槽具有（i）第一深度处的附接面，以及（ii）第二深度处的流体通道 。 下壁位于凹槽中并附着到上壁的附接面，以封闭流体通道。 提供流体入口以将传热流体供应到流体通道和设置用于从流体通道排出传热流体的流体出口。
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公开(公告)号：US07768765B2
公开(公告)日：2010-08-03
申请号：US11683994
申请日：2007-03-08
申请人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon L. Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
发明人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon L. Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
IPC分类号： H01T23/00
CPC分类号： H01L21/67109
摘要： A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.
摘要翻译： 用于衬底处理室的支撑件包括流体循环容器，其包括具有蛇形卷积的通道。 流体入口将传热流体供应到流体循环储存器，并且流体出口排出传热流体。 在一个版本中，频道翻倍翻转自己。
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公开(公告)号：US07221553B2
公开(公告)日：2007-05-22
申请号：US10421473
申请日：2003-04-22
申请人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon L. Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
发明人： Andrew Nguyen , Wing Lau Cheng , Hiroji Hanawa , Semyon L. Kats , Kartik Ramaswamy , Yan Ye , Kwok Manus Wong , Daniel J. Hoffman , Tetsuya Ishikawa , Brian C. Lue
IPC分类号： H05F3/00
CPC分类号： H01L21/67109
摘要： A support for a substrate processing chamber has upper and lower walls that are joined by a peripheral sidewall to define a reservoir. A fluid inlet supplies a heat transfer fluid to the reservoir. In one version, a plurality of protrusions extends into the reservoir to perturb the flow of the heat transfer fluid through the reservoir. In another version, the reservoir is an elongated channel having one or more of (i) serpentine convolutions, (ii) integral fins extending into the channel, (iii) a roughened internal surface, or (iv) a changing cross-section. A fluid outlet discharges the heat transfer fluid from the reservoir.
摘要翻译： 用于衬底处理室的支撑件具有通过周边侧壁连接以限定储存器的上壁和下壁。 流体入口将传热流体供应到储存器。 在一个版本中，多个突起延伸到储存器中以扰乱通过储存器的传热流体的流动。 在另一个版本中，储存器是具有（i）蛇形循环中的一个或多个的细长通道，（ii）延伸到通道中的整体翅片，（iii）粗糙化的内表面，或（iv）变化的横截面。 流体出口从储存器排出传热流体。
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公开(公告)号：US06367412B1
公开(公告)日：2002-04-09
申请号：US09506111
申请日：2000-02-17
申请人： Kartik Ramaswamy , Kwok Manus Wong , Ashish Bhatnagar , Mehran Moalem , Tony S. Kaushal , Shamouil Shamouilian
发明人： Kartik Ramaswamy , Kwok Manus Wong , Ashish Bhatnagar , Mehran Moalem , Tony S. Kaushal , Shamouil Shamouilian
IPC分类号： C23C1600
CPC分类号： H01J37/32495 , B01D53/8662 , B01D2257/2066 , B01D2259/818 , C23C16/4412 , Y02C20/30
摘要： A plasma tube comprising a vacuum sealing ceramic outer tube, a porous ceramic insert disposed on the inside wall of the outer tube, and a source of high frequency radiation, for example, an RF coil wrapped around the tube, to excite gas flowing through the bore of the insert into a plasma. The invention is particularly useful as an exhaust scrubber for oxidizing exhaust gases from a semiconductor processing chamber. A catalyst may be embedded in the porous insert to promote the scrubbing reaction. The invention may also be used in an applicator of a remote plasma source.
摘要翻译： 一种等离子体管，包括真空密封陶瓷外管，设置在外管内壁上的多孔陶瓷插入件和高频辐射源，例如缠绕在管上的RF线圈，以激发流过 将插入孔插入等离子体。 本发明特别可用作用于氧化来自半导体处理室的废气的排气洗涤器。 催化剂可以嵌入多孔插入物中以促进洗涤反应。 本发明也可以用于远程等离子体源的施加器中。
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5.发明授权Method and apparatus for improving exhaust gas consumption in an exhaust conduit 失效用于改善排气管道中废气消耗的方法和装置公开(公告)号：US06642489B2
公开(公告)日：2003-11-04
申请号：US09758000
申请日：2001-01-09
IPC分类号： H05B610
CPC分类号： H01L21/67098
摘要： A conduit has a heating system disposed therein. The heating system generates heat in response to magnetic flux generated by an inductive coil. The heating system has a heat transfer element and a plurality of ferromagnetic elements. The heat transfer element may be displaced within the conduit to control the amount of heat generated.
摘要翻译： 导管具有设置在其中的加热系统。 加热系统响应于由感应线圈产生的磁通而产生热量。 加热系统具有传热元件和多个铁磁元件。 传热元件可以在导管内移位以控制产生的热量。
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公开(公告)号：US06391146B1
公开(公告)日：2002-05-21
申请号：US09547423
申请日：2000-04-11
IPC分类号： H05H100
CPC分类号： C23C16/4412 , B01D53/34 , B01D53/70
摘要： An apparatus and method for reducing hazardous gases exhausted from a process chamber 25 includes an effluent gas treatment system 200 with a gas energizing reactor 210 with an erosion resistant inner surface 280. Optionally, an additive gas source 230 may be provided to introduce additive gas into the gas energizing reactor 210. In one embodiment, the inner surface comprises a fluorine-containing compound. In another embodiment, the inner surface comprises an oxide and a stabilizing agent.
摘要翻译： 用于减少从处理室25排出的有害气体的装置和方法包括具有带有耐腐蚀内表面280的气体激励反应器210的废气处理系统200.任选地，可以提供添加气体源230以将添加气体引入 气体通电反应器210.在一个实施方案中，内表面包含含氟化合物。 在另一个实施方案中，内表面包含氧化物和稳定剂。
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7.发明授权Method and apparatus for heating a semiconductor wafer plasma reactor vacuum chamber 失效用于加热半导体晶片等离子体反应器真空室的方法和装置公开(公告)号：US06759624B2
公开(公告)日：2004-07-06
申请号：US10141025
申请日：2002-05-07
IPC分类号： B23K900
CPC分类号： H01J37/32009
摘要： A vacuum chamber, such as a semiconductor wafer plasma processing chamber, is heated by use of a ceramic igniter array consisting of a plurality of ceramic igniters positioned in a substrate.
摘要翻译： 通过使用由位于基板中的多个陶瓷点火器组成的陶瓷点火器阵列来加热真空室，例如半导体晶片等离子体处理室。
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8.发明授权Heated catalytic treatment of an effluent gas from a substrate fabrication process 有权对基板制造工艺中的废气进行加热催化处理公开(公告)号：US06824748B2
公开(公告)日：2004-11-30
申请号：US09872254
申请日：2001-06-01
申请人： Tony S. Kaushal , Shamouil Shamouilian , Harshad Borgaonkar , Kwok Manus Wong , Michael G. Chafin , Ashish Bhatnagar
发明人： Tony S. Kaushal , Shamouil Shamouilian , Harshad Borgaonkar , Kwok Manus Wong , Michael G. Chafin , Ashish Bhatnagar
IPC分类号： F28D2100
CPC分类号： H01J37/32844 , B01D53/8662 , B01D53/885 , B01J19/12 , B01J19/129 , B01J2219/0809 , B01J2219/083 , B01J2219/0835 , B01J2219/0871 , B01J2219/0875 , B01J2219/0892 , C23C16/4412 , H01J37/3244 , Y02C20/30
摘要： A substrate processing apparatus has a process chamber with a substrate support, a gas supply to introduce a gas into the chamber, and a gas energizer to energize the gas in the processing of a substrate, thereby generating an effluent gas. A catalytic reactor has an effluent gas inlet to receive the effluent gas and an effluent gas outlet to exhaust treated effluent gas. A heater is adapted to heat the effluent gas in the catalytic reactor. The heated catalytic treatment of the effluent gas abates the hazardous gases in the effluent. An additive gas source and a prescrubber may also be used to further treat the effluent.
摘要翻译： 基板处理装置具有具有基板支撑件的处理室，向室内引入气体的气体供给部，以及在基板的加工中使气体通电的气体增压器，从而产生流出气体。 催化反应器具有用于接收废气的废气入口和用于排出经处理的废气的废气出口。 加热器适于加热催化反应器中的废气。 流出气体的加热催化处理减少流出物中的有害气体。 还可以使用添加气体源和预饱和物来进一步处理流出物。
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公开(公告)号：US06478924B1
公开(公告)日：2002-11-12
申请号：US09513992
申请日：2000-03-07
申请人： Shamouil Shamouilian , Arnold Kholodenko , Kwok Manus Wong , Liang-Guo Wang , Alexander M. Veytser , Dennis S. Grimard
发明人： Shamouil Shamouilian , Arnold Kholodenko , Kwok Manus Wong , Liang-Guo Wang , Alexander M. Veytser , Dennis S. Grimard
IPC分类号： H05H100
CPC分类号： H01J37/32706 , H01L21/6833 , Y10T279/23
摘要： A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.
摘要翻译： 能够处理等离子体中的衬底50的处理室110包括覆盖第一电极220和第二电极230的电介质210，支撑电介质210的导体250以及向第一电极提供RF电压的电压源170 220或电介质210中的第二电极230.第一电极220与处理电极225电容耦合以激励处理室110中的处理气体，并且施加到第二电极230的RF电压电容耦合到导体250并且通过 套环260或第二电极230通过套环260直接电容耦合。
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公开(公告)号：US06673323B1
公开(公告)日：2004-01-06
申请号：US09535461
申请日：2000-03-24
IPC分类号： B01D4700
CPC分类号： B01D53/70 , B01D53/34 , C23C16/4412
摘要： A method for reducing hazardous gases exhausted from a process chamber includes an effluent gas treatment system with a gas energizing reactor and an additive gas source. Additive gas comprising reactive gas is introduced into the effluent from the process chamber in a volumetric flow rate in relation to the hazardous gas content in the effluent.
摘要翻译： 用于减少从处理室排出的有害气体的方法包括具有气体激励反应器和添加气体源的废气处理系统。 包含反应性气体的添加剂气体以相对于流出物中的有害气体含量的体积流量被引入来自处理室的流出物中。
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