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    Plasma RIE polymer removal
    1.
    发明授权
    Plasma RIE polymer removal 失效
    等离子体RIE聚合物去除

    公开(公告)号：US06758223B1

    公开(公告)日：2004-07-06

    申请号：US09603254

    申请日：2000-06-23

    申请人： Andy Cowley ,  Peter Emmi ,  Timothy Dalton ,  Christopher Jahnes

    发明人： Andy Cowley ,  Peter Emmi ,  Timothy Dalton ,  Christopher Jahnes

    IPC分类号： B08B600

    CPC分类号： H01L21/02063 ,  H01L21/31138 ,  H01L21/76804 ,  H01L21/76807 ,  Y10S134/902 ,  Y10S438/906

    摘要： A method for removal of post reactive ion etch by-product from a semiconductor wafer surface or microelectronic composite structure comprising: supplying a reducing gas plasma incorporating a forming gas mixture selected from the group consisting of a mixture of N2/H2 or a mixture of NH3/H2 into a vacuum chamber in which a semiconductor wafer surface or a microelectronic composite structure is supported to form a post-RIE polymer material by-product on the composite structure without significant removal of an organic, low K material which has also been exposed to the reducing gas plasma; and removing the post-RIE polymer material by-product with a wet clean.

    摘要翻译： 一种用于从半导体晶片表面或微电子复合结构去除后反应离子蚀刻副产物的方法，包括：提供还原气体等离子体，该还原气体等离子体包含选自N2 / H2或NH3混合物的成形气体混合物 / H2进入真空室，其中半导体晶片表面或微电子复合结构被支撑以在复合结构上形成后RIE聚合物材料副产物，而不显着除去已经暴露于 还原气体等离子体; 并用湿式清洁剂除去后RIE聚合物材料副产物。

    Dual damascene structure and method
    2.
    发明授权
    Dual damascene structure and method 有权
    双镶嵌结构和方法

    公开(公告)号：US07125792B2

    公开(公告)日：2006-10-24

    申请号：US10685055

    申请日：2003-10-14

    申请人： Kaushik Kumar ,  Douglas C. La Tulipe ,  Timothy Dalton ,  Larry Clevenger ,  Andy Cowley ,  Erdem Kaltalioglu ,  Jochen Schacht

    发明人： Kaushik Kumar ,  Douglas C. La Tulipe ,  Timothy Dalton ,  Larry Clevenger ,  Andy Cowley ,  Erdem Kaltalioglu ,  Jochen Schacht

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76835 ,  H01J37/32862 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/76811

    摘要： A dual damascene structure and method of fabrication thereof. An insulating layer comprises a first dielectric material and a second dielectric material, the second dielectric material being different from the first dielectric material. First conductive regions having a first pattern are formed in the first dielectric material, and second conductive regions having a second pattern are formed in the second dielectric material, the second pattern being different from the first pattern. One of the first dielectric material and the second dielectric material comprises an organic material, and the other dielectric material comprises an inorganic material. One of the first and second dielectric materials is etchable selective to the other dielectric material. A method of cleaning a semiconductor wafer processing chamber while a wafer remains residing within the chamber is also disclosed.

    摘要翻译： 一种双镶嵌结构及其制造方法。 绝缘层包括第一介电材料和第二电介质材料，第二电介质材料不同于第一电介质材料。 具有第一图案的第一导电区域形成在第一电介质材料中，并且具有第二图案的第二导电区域形成在第二电介质材料中，第二图案不同于第一图案。 第一电介质材料和第二电介质材料之一包括有机材料，而另一介电材料包括无机材料。 第一和第二介电材料之一是可蚀刻的对另一种介电材料的选择性。 还公开了当晶片保持在室内时清洁半导体晶片处理室的方法。

    OXIDIZED TANTALUM NITRIDE AS AN IMPROVED HARDMASK IN DUAL-DAMASCENE PROCESSING
    7.
    发明申请
    OXIDIZED TANTALUM NITRIDE AS AN IMPROVED HARDMASK IN DUAL-DAMASCENE PROCESSING 审中-公开
    氧化氮化钛作为双重加工过程中改进的硬质合金

    公开(公告)号：US20050208742A1

    公开(公告)日：2005-09-22

    申请号：US10708648

    申请日：2004-03-17

    申请人： William America ,  Larry Clevenger ,  Andy Cowley ,  Timothy Dalton ,  Mark Hoinkis ,  Kaushik Kumar ,  Douglas La Tulipe

    发明人： William America ,  Larry Clevenger ,  Andy Cowley ,  Timothy Dalton ,  Mark Hoinkis ,  Kaushik Kumar ,  Douglas La Tulipe

    IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/76811 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76834

    摘要： A method of producing an oxidized tantalum nitride (TaOxNx) hardmask layer for use in dual-damascene processing is described. Fine-line dual-damascene processing places competing, conflicting demands on the hardmask. Whereas critical dimension control needs a thicker hardmask, optical lithographic alignment is frustrated by the opacity of thick tantalum nitride (TaN). The technique solves the problem of TaN hardmask opacity with increasing thickness by oxidizing the TaN layer. Oxidation of the TaN hardmask increases the thickness of the hardmask to two to four times its original thickness and simultaneously increases its transparency by greater than ten times. This permits better CD control associated with a thicker hardmask while facilitating optical lithographic alignment.

    摘要翻译： 描述了用于双镶嵌加工的氧化氮化钽（TaO x N N N x S）硬掩模层的制造方法。 精细的双镶嵌加工对硬掩模产生了竞争，冲突的要求。 尽管临界尺寸控制需要较厚的硬掩模，但由于厚氮化钽（TaN）的不透明度，光学平版印刷对挫败感到沮丧。 该技术通过氧化TaN层来解决厚度增加的TaN硬掩模不透明度问题。 TaN硬掩模的氧化将硬掩模的厚度增加到其原始厚度的两到四倍，同时将其透明度提高了十倍以上。 这允许与更厚的硬掩模相关联的更好的CD控制，同时促进光学光刻对准。

    Dual damascene structure and method
    8.
    发明申请
    Dual damascene structure and method 有权
    双镶嵌结构和方法

    公开(公告)号：US20050079706A1

    公开(公告)日：2005-04-14

    申请号：US10685055

    申请日：2003-10-14

    申请人： Kaushik Kumar ,  Douglas La Tulipe ,  Timothy Dalton ,  Larry Clevenger ,  Andy Cowley ,  Erdem Kaltalioglu ,  Jochen Schacht

    发明人： Kaushik Kumar ,  Douglas La Tulipe ,  Timothy Dalton ,  Larry Clevenger ,  Andy Cowley ,  Erdem Kaltalioglu ,  Jochen Schacht

    IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/76835 ,  H01J37/32862 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/76811

    摘要： A dual damascene structure and method of fabrication thereof. An insulating layer comprises a first dielectric material and a second dielectric material, the second dielectric material being different from the first dielectric material. First conductive regions having a first pattern are formed in the first dielectric material, and second conductive regions having a second pattern are formed in the second dielectric material, the second pattern being different from the first pattern. One of the first dielectric material and the second dielectric material comprises an organic material, and the other dielectric material comprises an inorganic material. One of the first and second dielectric materials is etchable selective to the other dielectric material. A method of cleaning a semiconductor wafer processing chamber while a wafer remains residing within the chamber is also disclosed.

    摘要翻译： 一种双镶嵌结构及其制造方法。 绝缘层包括第一介电材料和第二电介质材料，第二电介质材料不同于第一电介质材料。 具有第一图案的第一导电区域形成在第一电介质材料中，并且具有第二图案的第二导电区域形成在第二电介质材料中，第二图案与第一图案不同。 第一电介质材料和第二电介质材料之一包括有机材料，而另一介电材料包括无机材料。 第一和第二介电材料之一是可蚀刻的对另一种介电材料的选择性。 还公开了当晶片保持在室内时清洁半导体晶片处理室的方法。