Solar cell contact formation using laser ablation
    3.
    发明授权
    Solar cell contact formation using laser ablation 有权
    使用激光烧蚀的太阳能电池接触形成

    公开(公告)号:US08324015B2

    公开(公告)日:2012-12-04

    申请号:US12895437

    申请日:2010-09-30

    IPC分类号: H01L21/00

    摘要: The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

    摘要翻译: 描述了使用激光器形成太阳能电池触点。 制造背接触太阳能电池的方法包括在单晶衬底上形成多晶材料层。 该方法还包括在多晶材料层上形成介电材料堆叠。 该方法还包括通过激光烧蚀形成介电材料堆叠中的多个接触孔,每个接触孔暴露多晶材料层的一部分; 以及在所述多个接触孔中形成导电接触。

    METHOD OF FABRICATING A BACK-CONTACT SOLAR CELL AND DEVICE THEREOF
    4.
    发明申请
    METHOD OF FABRICATING A BACK-CONTACT SOLAR CELL AND DEVICE THEREOF 有权
    制造背接触太阳能电池的方法及其装置

    公开(公告)号:US20110214719A1

    公开(公告)日:2011-09-08

    申请号:US12972247

    申请日:2010-12-17

    IPC分类号: H01L31/02 H01L31/0236

    摘要: Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

    摘要翻译: 描述制造背接触太阳能电池的方法及其装置。 制造背接触太阳能电池的方法包括在设置在基板上方的材料层的上方形成N型掺杂剂源层和P型掺杂剂源层。 N型掺杂剂源层与P型掺杂剂源层间隔开。 加热N型掺杂剂源层和P型掺杂剂源层。 随后,在材料层中,在N型和P型掺杂剂源层之间形成沟槽。

    SOLAR CELL CONTACT FORMATION USING LASER ABLATION
    5.
    发明申请
    SOLAR CELL CONTACT FORMATION USING LASER ABLATION 有权
    使用激光雷射的太阳能电池接触形成

    公开(公告)号:US20110126898A1

    公开(公告)日:2011-06-02

    申请号:US12895437

    申请日:2010-09-30

    IPC分类号: H01L31/0224

    摘要: The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

    摘要翻译: 描述了使用激光器形成太阳能电池触点。 制造背接触太阳能电池的方法包括在单晶衬底上形成多晶材料层。 该方法还包括在多晶材料层上形成介电材料堆叠。 该方法还包括通过激光烧蚀形成介电材料堆叠中的多个接触孔,每个接触孔暴露多晶材料层的一部分; 以及在所述多个接触孔中形成导电接触。

    METHOD OF FABRICATING A BACK-CONTACT SOLAR CELL AND DEVICE THEREOF
    6.
    发明申请
    METHOD OF FABRICATING A BACK-CONTACT SOLAR CELL AND DEVICE THEREOF 审中-公开
    制造背接触太阳能电池的方法及其装置

    公开(公告)号:US20140305501A1

    公开(公告)日:2014-10-16

    申请号:US14314938

    申请日:2014-06-25

    IPC分类号: H01L31/0236 H01L31/18

    摘要: Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

    摘要翻译: 描述制造背接触太阳能电池的方法及其装置。 制造背接触太阳能电池的方法包括在设置在基板上方的材料层的上方形成N型掺杂剂源层和P型掺杂剂源层。 N型掺杂剂源层与P型掺杂剂源层间隔开。 加热N型掺杂剂源层和P型掺杂剂源层。 随后,在材料层中,在N型和P型掺杂剂源层之间形成沟槽。

    Method of fabricating a back-contact solar cell and device thereof
    7.
    发明授权
    Method of fabricating a back-contact solar cell and device thereof 有权
    背接触太阳能电池的制造方法及其装置

    公开(公告)号:US08790957B2

    公开(公告)日:2014-07-29

    申请号:US12972247

    申请日:2010-12-17

    IPC分类号: H01L31/18

    摘要: Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

    摘要翻译: 描述制造背接触太阳能电池的方法及其装置。 制造背接触太阳能电池的方法包括在设置在基板上方的材料层的上方形成N型掺杂剂源层和P型掺杂剂源层。 N型掺杂剂源层与P型掺杂剂源层间隔开。 加热N型掺杂剂源层和P型掺杂剂源层。 随后,在材料层中,在N型和P型掺杂剂源层之间形成沟槽。