专利检索 ap:("Apple Inc.") AND inv:"Jun Zhai" 第 1 页

1.

发明申请
Selectable Monolithic or External Scalable Die-to-Die Interconnection System Methodology 有权

公开(公告)号：US20230085890A1

公开(公告)日：2023-03-23

申请号：US17483535

申请日：2021-09-23

申请人： Apple Inc.

发明人： Sanjay Dabral , Jun Zhai , Jung-Cheng Yeh , Kunzhong Hu , Raymundo Camenforte , Thomas Hoffmann

IPC分类号： H01L23/528 , H01L23/58 , H01L23/538 , H01L23/48 , H01L25/065

摘要： Multi-die structures and methods of fabrication are described. In an embodiment, a multi-die structure includes a first die, a second die, and die-to-die routing connecting the first die to the second die. The die-to-die interconnection may be monolithically integrated as a chip-level die-to-die routing, or external package-level die-to-die routing.

2.

发明授权
High density interconnection using fanout interposer chiplet 有权

公开(公告)号：US11594494B2

公开(公告)日：2023-02-28

申请号：US17166795

申请日：2021-02-03

申请人： Apple Inc.

发明人： Jun Zhai , Chonghua Zhong , Kunzhong Hu

IPC分类号： H01L23/538 , H01L21/48 , H01L21/683 , H01L23/498 , H01L25/00 , H01L23/16 , H01L23/00 , H01L25/10 , H01L25/065 , H01L25/18 , H01L23/31

摘要： Multiple component package structures are described in which an interposer chiplet is integrated to provide fine routing between components. In an embodiment, the interposer chiplet and a plurality of conductive vias are encapsulated in an encapsulation layer. A first plurality of terminals of the first and second components may be in electrical connection with the plurality of conductive pillars and a second plurality of terminals of first and second components may be in electrical connection with the interposer chiplet.

3.

发明授权
Die-to-die routing through a seal ring 有权

公开(公告)号：US11476203B2

公开(公告)日：2022-10-18

申请号：US17216278

申请日：2021-03-29

申请人： Apple Inc.

发明人： Sanjay Dabral , Jun Zhai

IPC分类号： H01L23/48 , H01L21/44 , H01L23/538 , H01L23/488 , H01L23/00 , H01L25/18 , H01L21/66 , H01L23/522 , H01L23/528 , H01L23/58 , H01L23/498

摘要： Stitched die structures, and methods for interconnecting die are described. In an embodiment, a stitched die structure includes a semiconductor substrate that includes a first die area of a first die and a second die area of a second die separate from the first die area. A back-end-of-the-line (BEOL) build-up structure spans over the first die area and the second die area, and includes a first metallic seal directly over a first peripheral area of the first die area, a second metallic seal directly over a second peripheral area of the second die area, and a die-to-die routing extending through the first metallic seal and the second metallic seal to electrically connect the first die to the second die.

4.

发明申请
MULTIPLE COMPONENT INTEGRATION IN FANOUT PACKAGE WITH DIFFERENT BACK SIDE METALLIZATION AND THICKNESSES 有权

公开(公告)号：US20220093523A1

公开(公告)日：2022-03-24

申请号：US17027097

申请日：2020-09-21

申请人： Apple Inc.

发明人： Karthik Shanmugam , Jun Zhai

IPC分类号： H01L23/538 , H01L25/16 , H01L21/56 , H01L23/485 , H05K1/18

摘要： One or more stud bumps may form a conductive column to a component having back side metallization. In an embodiment, the column of stud bumps may be about 130 um vertically (Z-direction). Providing a microelectronics package with a column of stud bumps electrically connected to a component having back side metallization may provide a cost effective electrical interconnect and may enable the incorporation of components of different thicknesses, including that the component thicknesses are independent of each other, in a single fanout package, while providing a thin package profile and back side surface finish integration.

5.

发明申请
PACKAGE INTEGRATION USING FANOUT CAVITY SUBSTRATE 有权

公开(公告)号：US20220093522A1

公开(公告)日：2022-03-24

申请号：US17026708

申请日：2020-09-21

申请人： Apple Inc.

发明人： Karthik Shanmugam , Jun Zhai , Rajasekaran Swaminathan

IPC分类号： H01L23/538 , H01L23/31 , H05K1/18 , H01L25/16 , H01L21/56

摘要： Packages and packaging techniques are described in which a patterned carrier substrate can be used to create a reconstituted fanout substrate with a topography that can accommodate components of different thicknesses. In an embodiment, a wiring layer is formed directly on a multiple level topography of a molding compound layer including embedded components.

6.

发明授权
Multi-die fine grain integrated voltage regulation 有权

公开(公告)号：US11063046B2

公开(公告)日：2021-07-13

申请号：US16529043

申请日：2019-08-01

申请人： Apple Inc.

发明人： Jared L. Zerbe , Emerson S. Fang , Jun Zhai , Shawn Searles

IPC分类号： H01L27/10 , H01L23/13 , H01L23/64 , H01L23/00 , H01L25/065 , H01L25/16 , H01L25/18 , H01L23/498 , H01G4/228 , H01L49/02 , H01L23/48 , H01L25/10 , H01L23/50

摘要： A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device may include one or more current consuming elements. A passive device may be coupled to the power consuming device. The passive device may include a plurality of passive elements formed on a semiconductor substrate. The passive elements may be arranged in an array of structures on the semiconductor substrate. The power consuming device and the passive device may be coupled using one or more terminals. The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.

7.

发明授权
Power management system switched capacitor voltage regulator with integrated passive device 有权

公开(公告)号：US10756622B2

公开(公告)日：2020-08-25

申请号：US16231904

申请日：2018-12-24

申请人： Apple Inc.

发明人： Sanjay Dabral , David A. Secker , Jun Zhai , Ralf M. Schmitt , Vidhya Ramachandran , Wenjie Mao

IPC分类号： H02M3/07 , G05F3/10 , H01L29/66 , H01L23/00 , H01L23/522

摘要： Power management systems are described. In an embodiment, a power management system includes a voltage source, a circuit load located within a chip, and a switched capacitor voltage regulator (SCVR) coupled to voltage source and the circuit load to receive an input voltage from the voltage source and supply an output voltage to the circuit load. The SCVR may include circuitry located within the chip and a discrete integrated passive device (IPD) connected to the chip.

8.

发明申请
WAFER LEVEL INTEGRATION OF PASSIVE DEVICES 审中-公开

公开(公告)号：US20200027861A1

公开(公告)日：2020-01-23

申请号：US16585147

申请日：2019-09-27

申请人： Apple Inc.

发明人： Jun Zhai

IPC分类号： H01L25/065 , H01L23/00 , H01L23/498 , H01L23/50 , H01L25/16 , H01L23/31 , H01L25/00 , H01L49/02 , H01L23/528 , H01L21/78 , H01L21/683 , H01L21/768 , H01L21/56

摘要： A semiconductor device is described that includes an integrated circuit coupled to a first semiconductor substrate with a first set of passive devices (e.g., inductors) on the first substrate. A second semiconductor substrate with a second set of passive devices (e.g., capacitors) may be coupled to the first substrate. Interconnects in the substrates may allow interconnection between the substrates and the integrated circuit. The passive devices may be used to provide voltage regulation for the integrated circuit. The substrates and integrated circuit may be coupled using metallization.