Display with light-emitting diodes

    公开(公告)号:US12142220B2

    公开(公告)日:2024-11-12

    申请号:US18532835

    申请日:2023-12-07

    Applicant: Apple Inc.

    Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

    Display With Light-Emitting Diodes

    公开(公告)号:US20220383817A1

    公开(公告)日:2022-12-01

    申请号:US17884297

    申请日:2022-08-09

    Applicant: Apple Inc.

    Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

    Display With Light-Emitting Diodes

    公开(公告)号:US20220114962A1

    公开(公告)日:2022-04-14

    申请号:US17555694

    申请日:2021-12-20

    Applicant: Apple Inc.

    Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

    Displays With Silicon and Semiconducting Oxide Thin-Film Transistors

    公开(公告)号:US20220037374A1

    公开(公告)日:2022-02-03

    申请号:US17502909

    申请日:2021-10-15

    Applicant: Apple Inc.

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Reducing Border Width Around a Hole in Display Active Area

    公开(公告)号:US20210305350A1

    公开(公告)日:2021-09-30

    申请号:US17145815

    申请日:2021-01-11

    Applicant: Apple Inc.

    Abstract: An electronic device may include a display having display pixels formed in an active area of the display. The display further includes display driver circuitry for driving gate lines that are routed across the display. A hole such as a through hole, optical window, or other inactive region may be formed within the active area of the display. Multiple gate lines carrying the same signal may be merged together prior to being routed around the hole to help minimize the routing line congestion around the border of the hole. Dummy circuits may be coupled to the merged segment portion to help increase the parasitic loading on the merged segments. The hole may have a tapered shape to help maximize the size of the active area. The hole may have an asymmetric shape to accommodate multiple sub-display sensor components.

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