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公开(公告)号：US12230479B2
公开(公告)日：2025-02-18
申请号：US18599767
申请日：2024-03-08
Applicant: Applied Materials, Inc.
Inventor： Kazuya Daito , Yi Xu , Yu Lei , Takashi Kuratomi , Jallepally Ravi , Pingyan Lei , Dien-Yeh Wu
IPC: C23C16/50 , C23C16/455 , H01J37/32 , H01L21/67 , H05H1/46
Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.
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公开(公告)号：US11515200B2
公开(公告)日：2022-11-29
申请号：US17110826
申请日：2020-12-03
Applicant: Applied Materials, Inc.
IPC: H01L21/768
Abstract: Embodiments of the disclosure provide methods which reduce or eliminate lateral growth of a selective tungsten layer. Further embodiments provide an integrated clean and deposition method which improves the selectivity of selectively deposited tungsten on trench structures. Additional embodiments provide methods for forming a more uniform and selective bottom-up gap fill for trench structures with improved film properties.
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公开(公告)号：US20210351032A1
公开(公告)日：2021-11-11
申请号：US16867554
申请日：2020-05-05
Applicant: Applied Materials, Inc.
Inventor： Xi Cen , Yakuan Yao , Yiming Lai , Kai Wu , Avgerinos V. Gelatos , David T. Or , Keyvan Kashefi , Yu Lei , Lin Dong , He Ren , Yi Xu , Mehul Naik , Hao Chen , Mang-Mang Ling
IPC: H01L21/02 , H01L21/768 , H01L21/67
Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.
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公开(公告)号：US20180145034A1
公开(公告)日：2018-05-24
申请号：US15817985
申请日：2017-11-20
Applicant: Applied Materials, Inc.
Inventor： Yi Xu , Feiyue Ma , Yu Lei , Kazuya Daito , Vikash Banthia , Kai Wu , Jenn Yue Wang , Mei Chang
IPC: H01L23/532 , H01L21/02 , H01L21/768 , H01L21/3205 , H01L23/528 , H01L21/285
Abstract: Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.
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公开(公告)号：US12191200B2
公开(公告)日：2025-01-07
申请号：US17489089
申请日：2021-09-29
Applicant: Applied Materials, Inc.
Inventor： Jiajie Cen , Da He , Yi Xu , Yu Lei
IPC: H01L21/768 , H01L21/02
Abstract: A method of gap filling a feature on a substrate decreases the feature-to-feature gap fill height variation by using a tungsten halide soak treatment. In some embodiments, the method may include heating a substrate to a temperature of approximately 350 degrees Celsius to approximately 450 degrees Celsius, exposing the substrate to a tungsten halide gas at a process pressure of approximately 5 Torr to approximately 25 Torr, soaking the substrate for a soak time of approximately 5 seconds to approximately 60 seconds with the tungsten halide gas, and performing a metal preclean process and a gap fill deposition on a plurality of features on the substrate after soaking of the substrate has completed.
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公开(公告)号：US11967525B2
公开(公告)日：2024-04-23
申请号：US17878599
申请日：2022-08-01
Applicant: Applied Materials, Inc.
Inventor： Yi Xu , Yufei Hu , Yu Lei , Kazuya Daito , Da He , Jiajie Cen
IPC: H01L21/68 , H01L21/285 , H01L21/768 , H01L23/522 , H01L23/532
CPC classification number: H01L21/76879 , H01L21/28562 , H01L21/76816 , H01L21/76831 , H01L21/76834 , H01L23/5226 , H01L23/53209 , H01L23/53214 , H01L23/53228 , H01L23/53257
Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.
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公开(公告)号：US11955381B2
公开(公告)日：2024-04-09
申请号：US16908076
申请日：2020-06-22
Applicant: Applied Materials, Inc.
Inventor： Yi Xu , Yufei Hu , Kazuya Daito , Geraldine M. Vasquez , Da He , Jallepally Ravi , Yu Lei , Dien-Yeh Wu
IPC: H01L21/02 , H01J37/32 , H01L21/67 , H01L21/768
CPC classification number: H01L21/76883 , H01J37/32174 , H01L21/02049 , H01L21/02063 , H01L21/67028
Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.
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公开(公告)号：US20220367264A1
公开(公告)日：2022-11-17
申请号：US17878599
申请日：2022-08-01
Applicant: Applied Materials, Inc.
Inventor： Yi Xu , Yufei Hu , Yu Lei , Kazuya Daito , Da He , Jiajie Cen
IPC: H01L21/768 , H01L21/285 , H01L23/532 , H01L23/522
Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.
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公开(公告)号：US20220028793A1
公开(公告)日：2022-01-27
申请号：US17498247
申请日：2021-10-11
Applicant: Applied Materials, Inc.
Inventor： Yu Lei , Sang-Hyeob Lee , Chris Pabelico , Yi Xu , Tae Hong Ha , Xianmin Tang , Jin Hee Park
IPC: H01L23/532 , H01L21/768
Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.
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公开(公告)号：US10508339B2
公开(公告)日：2019-12-17
申请号：US15663734
申请日：2017-07-29
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaoxiong Yuan , Yu Lei , Yi Xu , Kazuya Daito , Pingyan Lei , Dien-Yeh Wu , Umesh M. Kelkar , Vikash Banthia
IPC: C23C16/455 , H01L21/67
Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.
