公开(公告)号：US20030014145A1

公开(公告)日：2003-01-16

申请号：US10135405

申请日：2002-05-01

Applicant: Applied Materials, Inc.

Inventor： Terry P. Reiss ,  Arulkumar P. Shanmugasundram ,  Alexander T. Schwarm

IPC: G06F019/00

CPC classification number: G05B23/0286 ,  G05B19/41865 ,  G05B2219/31357 ,  G05B2219/31443 ,  G05B2219/45031 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/20

Abstract: Semiconductor wafers are processed in conjunction with a manufacturing execution system using a run-to-run controller and a fault detection system. A recipe is received from the manufacturing execution system by the run-to-run controller for controlling a tool. The recipe includes a setpoint for obtaining one or more target wafer properties. Processing of the wafers is monitored by measuring processing attributes including fault conditions and wafer properties using the fault detection system and one or more sensors. Setpoints of the recipe may be modified at the run-to-run controller according to the processing attributes to maintain the target wafer properties, except in cases when a fault condition is detected by the fault detection system. Thus, data acquired in the presence of tool or wafer fault conditions are not used for feedback purposes. In addition, fault detection models may be used to define a range of conditions indicative of a fault condition. In these cases, the fault detection models may be modified to incorporate, as parameters, setpoints of a recipe modified by a run-to-run controller.

Abstract translation: 半导体晶片与使用运行控制器和故障检测系统的制造执行系统一起进行处理。 通过用于控制工具的跑步运行控制器从制造执行系统接收配方。 该配方包括用于获得一个或多个目标晶片特性的设定点。 通过使用故障检测系统和一个或多个传感器测量包括故障状况和晶片特性的处理属性来监视晶片的处理。 除了在故障检测系统检测到故障情况的情况下，配方的设定点可以根据处理属性在运行控制器上修改以维持目标晶片特性。 因此，在存在工具或晶片故障条件的情况下获取的数据不用于反馈目的。 此外，可以使用故障检测模型来定义指示故障状况的条件范围。 在这些情况下，可以修改故障检测模型，以便将由运行到运行的控制器修改的配方的设定点作为参数进行参考。

公开(公告)号：US20020193899A1

公开(公告)日：2002-12-19

申请号：US10135451

申请日：2002-05-01

Applicant: Applied Materials, Inc.

Inventor： Arulkumar P. Shanmugasundram ,  Alexander T. Schwarm

IPC: G06F019/00

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/03 ,  B24B49/18 ,  B24B53/017 ,  G05B19/00 ,  G05B19/19 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/31053 ,  H01L21/67253 ,  H01L21/67276 ,  H01L22/20 ,  Y02P90/14 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/86

Abstract: Systems, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. A sampling plan provides information on specific measure points within a die, a die being the section on the wafer that will eventually become a single chip after processing. There are specified points within the die that are candidates for measuring. The stored die map information may be retrieved and translated to determine the available points for measurement on the wafer. The invention adjusts the frequency and/or spatial resolution of measurements when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The increase in measurements and possible corresponding decrease in processing occur on an as-needed basis. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Where there are provided a number of candidate points in the die map in the area to which points are to be added, subtracted, or replaced, the system can select among the points. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.

Abstract translation: 提供了系统，方法和介质，用于与要测量的晶片（或其他器件）相关的采样计划的动态调整。 采样计划提供有关芯片内特定测量点的信息，芯片是晶片上最终将在处理后成为单个芯片的部分。 模具中有指定的点是测量的候选者。 存储的管芯地图信息可以被检索和转换以确定用于在晶片上进行测量的可用点。 当发生可能指示影响制造过程或结果的内部或外部变化的一个或多个事件时，本发明调整测量的频率和/或空间分辨率。 测量的增加和可能的相应的处理减少在需要的基础上发生。 动态计量计划通过根据某些事件增加，减去或替换采样计划中的候选点来调整晶片内采样的空间分辨率，这些事件表明可能需要对晶片进行额外或不同的测量。 如果在要添加，减去或替换点的区域中的模具映射中提供了多个候选点，则系统可以在点之间进行选择。 此外，本发明可以与调整晶片到晶片测量的频率有关。

公开(公告)号：US20020199082A1

公开(公告)日：2002-12-26

申请号：US10172977

申请日：2002-06-18

Applicant: Applied Materials, Inc.

Inventor： Arulkumar P. Shanmugasundram ,  Helen Armer ,  Alexander T. Schwarm

IPC: G06F009/30 ,  G06F009/40

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B49/03 ,  B24B49/18 ,  G05B19/00 ,  G05B19/19 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/31053 ,  H01L21/67253 ,  H01L21/67276 ,  H01L22/20 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20

Abstract: The invention relates to a method, system and computer program useful for producing a product, such as a microelectronic device, for example in an assembly line, where the production facility includes parallel production of assembly lines of products on identically configured chambers, tools and/or modules. Control is provided between such chambers. Behaviors of a batch of wafers (or of each wafer) are collected as the first batch (or each wafer) is processed by one of the identically configured chambers in one assembly line to produce the microelectronic device. The information relating to the behavior is shared with a controller of another one (or more) of the identically configured chambers, process tools and/or modules, to provide an adjustment of the process tool and thereby to produce a second batch (or next wafer) which is substantially identical, within tolerance, to the first batch (or wafer).

Abstract translation: 本发明涉及用于生产例如在装配线中的微电子装置的产品的方法，系统和计算机程序，其中生产设备包括在相同配置的室，工具和/ 或模块。 在这些室之间提供控制。 一批晶片（或每个晶片）的行为被收集，因为第一批（或每个晶片）由一个组装线中的相同配置的腔室中的一个处理，以产生微电子器件。 与行为相关的信息与另一个（或多个）相同配置的腔室，过程工具和/或模块的控制器共享，以提供过程工具的调整，从而产生第二批次（或下一个晶片 ），其在公差范围内与第一批（或晶片）基本相同。

公开(公告)号：US20020193902A1

公开(公告)日：2002-12-19

申请号：US10173108

申请日：2002-06-18

Applicant: Applied Materials, Inc.

Inventor： Arulkumar P. Shanmugasundram ,  Alexander T. Schwarm

IPC: G06F019/00

CPC classification number: B24B53/017 ,  B24B49/18 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/67253 ,  H01L21/67276 ,  H01L22/20 ,  Y02P90/20

Abstract: Semiconductor wafers are processed in a fab in a manner that integrates control at multiple functional unit levels. Examples of functional units include fabs, modules, tools, and the like. Initially, a number of functional unit property targets are received at a functional unit. The functional unit property targets are utilized to generate a number of tool targets for any number of tool level functional units. From there, the tool targets are forwarded to the corresponding tool level functional units. At these tool level functional units, a number of tool recipes, each of which define a number of process setpoints, may be generated by processing the tool targets. The process setpoints define a number of parameters which must be satisfied in order to attain the corresponding tool targets. In addition, in at least some embodiments, the tool targets and tool recipes are determined utilizing feedback information including functional unit states and measurements of controlled parameters.

Abstract translation: 在晶圆厂中以在多个功能单元级别集成控制的方式处理半导体晶片。 功能单元的示例包括晶圆厂，模块，工具等。 最初，在功能单元处接收多个功能单元属性目标。 功能单元属性目标用于为任意数量的刀具级功能单元生成多个刀具目标。 从那里，工具目标转发到相应的工具级功能单元。 在这些工具级功能单元中，可以通过处理工具目标来生成多个工具配方，每个工具配方定义多个工艺设定点。 过程设定点定义了为了获得相应的工具目标而必须满足的许多参数。 此外，在至少一些实施例中，使用包括功能单元状态和受控参数的测量的反馈信息来确定工具目标和工具配方。

公开(公告)号：US20040148049A1

公开(公告)日：2004-07-29

申请号：US10759108

申请日：2004-01-20

Applicant: Applied Materials, Inc.

Inventor： Alexander T. Schwarm

IPC: G06F019/00

CPC classification number: G05B17/02

Abstract: A method, system and medium of automation performed on a semiconductor manufacturing tool. The method creates a designed set of experiments for the tool and runs the created set of experiments. The method also collects data resulting from running the experiments and creates a model based on the collected data. The created model is used in automatically controlling the tool.

公开(公告)号：US20030049390A1

公开(公告)日：2003-03-13

申请号：US10174370

申请日：2002-06-18

Applicant: Applied Materials, Inc.

Inventor： Arulkumar P. Shanmugasundram ,  Alexander T. Schwarm ,  Ilias Iliopoulos ,  Alexander Parkhomovsky ,  Martin J. Seamons

IPC: H01L021/44 ,  C23C016/00 ,  C23C008/00

CPC classification number: H01L22/20 ,  C23C16/52 ,  G05B19/00 ,  G05B19/19 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/67253 ,  Y02P90/20

Abstract: A method of film deposition in a chemical vapor deposition (CVD) process includes (a) providing a model for CVD deposition of a film that defines a plurality of regions on a wafer and identifies one or more film properties for at least two regions of the wafer and at least one deposition model variable that correlates with the one or more film properties; (b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; (c) measuring a film property of at least one of the one or more film properties for the deposited film of step (b) for each of the at least two regions of the wafer and determining a film property; (d) calculating an updated deposition model based upon the film property of step (c) and the model of step (a); and (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property. The method can be used to provide feedback to a plurality of deposition chambers or to control film properties other than film thickness.

Abstract translation: 化学气相沉积（CVD）工艺中的薄膜沉积方法包括（a）提供用于CVD沉积薄膜的模型，该薄膜在晶片上限定多个区域，并且识别出至少两个区域的一个或多个薄膜性质 晶片和与一个或多个膜性质相关的至少一个沉积模型变量; （b）使用包括对应于所述至少一个沉积变量的至少一个沉积配方参数的第一沉积配方将膜沉积在晶片上; （c）测量晶片的至少两个区域中的每一个的步骤（b）的沉积膜的一个或多个膜性质中的至少一个的膜性质，并确定膜性质; （d）基于步骤（c）的膜性质和步骤（a）的模型计算更新的沉积模型; 以及（e）基于步骤（d）的更新模型来计算更新的沉积配方以维持目标膜特性。 该方法可以用于向多个沉积室提供反馈或者控制膜厚以外的膜特性。

公开(公告)号：US20030049376A1

公开(公告)日：2003-03-13

申请号：US10174377

申请日：2002-06-18

Applicant: Applied Materials, Inc.

Inventor： Alexander T. Schwarm ,  Arulkumar P. Shanmugasundram ,  Rong Pan ,  Manuel Hernandez ,  Amna Mohammad

IPC: C23C016/00

CPC classification number: H01L22/20 ,  C23C16/52 ,  G05B19/00 ,  G05B19/19 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/67253 ,  Y02P90/20

Abstract: A method of film deposition in a sub-atmospheric chemical vapor deposition (CVD) process includes (a) providing a model for sub-atmospheric CVD deposition of a film that identifies one or more film properties of the film and at least one deposition model variable that correlates with the one or more film properties; (b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; (c) measuring a film property of at least one of said one or more film properties for the deposited film of step (b); (d) calculating an updated deposition model based upon the measured film property of step (c) and the model of step (a); and (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property. The method can be used to provide feedback to a plurality of deposition chambers or to control a film property other than film thickness.

Abstract translation: 在亚大气压化学气相沉积（CVD）方法中的膜沉积方法包括（a）提供用于识别膜的一个或多个膜性质的薄膜的亚常气氛CVD沉积模型和至少一个沉积模型变量 这与一个或多个膜性质相关; （b）使用包括对应于所述至少一个沉积变量的至少一个沉积配方参数的第一沉积配方将膜沉积在晶片上; （c）测量步骤（b）的沉积膜的所述一种或多种膜性质中的至少一种的膜性质; （d）基于步骤（c）的测量的膜性质和步骤（a）的模型计算更新的沉积模型; 以及（e）基于步骤（d）的更新模型来计算更新的沉积配方以维持目标膜特性。 该方法可用于向多个沉积室提供反馈或控制除膜厚度之外的膜性质。