IN-SITU SEMICONDUCTOR PROCESSING CHAMBER TEMPERATURE APPARATUS

    公开(公告)号:US20180366354A1

    公开(公告)日:2018-12-20

    申请号:US15964296

    申请日:2018-04-27

    Abstract: In one implementation, a showerhead assembly is provided. The showerhead assembly comprises a first electrode having a plurality of openings therethrough and a gas distribution faceplate attached to a first lower major surface of the electrode. The gas distribution plate includes a plurality of through-holes for delivering process gases to a processing chamber. The gas distribution plate is divided into a plurality of temperature-control regions. The showerhead assembly further comprises a chill plate positioned above the electrode for providing temperature control and a plurality of heat control devices to manage heat transfer within the showerhead assembly. The heat control device comprises a thermoelectric module and a heat pipe assembly coupled with the thermoelectric module. Each of the plurality of heat control devices is associated with a temperature control region and provides independent temperature control to its associated temperature control region.

    IN-SITU TEMPERATURE MEASUREMENT FOR INSIDE OF PROCESS CHAMBER

    公开(公告)号:US20180254208A1

    公开(公告)日:2018-09-06

    申请号:US15880086

    申请日:2018-01-25

    Abstract: Apparatuses and methods for in-situ temperature measurement of a process chamber are described herein. A process chamber includes an infrared (IR) sensor mounted to the chamber wall. The IR sensor is mounted such that it can be oriented to receive an IR wave from targets within the process chamber through a view port in the chamber wall to detect a temperature of a surface inside the chamber, or to receive an IR wave from a target outside of the process chamber to detect an atmospheric temperature or a temperature of an exterior surface of the process chamber. As the orientation of the IR sensor is controllable to receive the IR wave from selected directions, it may be used to detect the temperature of various targets inside and outside the process chamber. The obtained temperature information is useful to improve overall chamber matching, processing throughput, and uniformity.

    TEMPERATURE RAMPING USING GAS DISTRIBUTION PLATE HEAT
    4.
    发明申请
    TEMPERATURE RAMPING USING GAS DISTRIBUTION PLATE HEAT 有权
    使用气体分配板温度的温度调整

    公开(公告)号:US20150262834A1

    公开(公告)日:2015-09-17

    申请号:US14642340

    申请日:2015-03-09

    Abstract: A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.

    Abstract translation: 提供了一种用于蚀刻设置在基板上的电介质层的方法。 该方法包括在蚀刻处理室中从静电卡盘取下基板,并在基板从静电卡盘脱卡的同时循环蚀刻电介质层。 循环蚀刻包括在提供到蚀刻处理室中的蚀刻气体混合物中远程产生等离子体,以在第一温度下蚀刻设置在基板上的电介质层。 蚀刻介电层产生蚀刻副产物。 循环蚀刻还包括将衬底垂直移动到蚀刻处理室中的气体分配板,并且使升华气体从气体分配板朝向衬底流动以升华蚀刻副产物。 升华在第二温度下进行,其中第二温度大于第一温度。

    MAGNETIC HOLDING STRUCTURES FOR PLASMA PROCESSING APPLICATIONS

    公开(公告)号:US20220122866A1

    公开(公告)日:2022-04-21

    申请号:US17076024

    申请日:2020-10-21

    Abstract: Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In an embodiment, a magnet holding structure for a plasma-enhanced chemical vapor deposition chamber is provided. The magnet holding structure includes a top piece having a plurality of magnet retention members and a bottom piece having a plurality of magnet retention members. The top piece has a first inside edge and a first outside edge, and the bottom piece has a second inside edge and a second outside edge. The magnet holding structure further includes a plurality of casings. Each casing of the plurality of casings is configured to at least partially encapsulate a magnet, and each casing positioned between a magnet retention member of the top piece and a magnet retention member of the bottom piece.

    RADIO FREQUENCY FILTER SYSTEM FOR A PROCESSING CHAMBER

    公开(公告)号:US20200152423A1

    公开(公告)日:2020-05-14

    申请号:US16601241

    申请日:2019-10-14

    Abstract: A radio frequency (RF) filter system for a substrate processing chamber comprises a first RF filter coupled to a first element of the processing chamber and a second RF filter coupled to the first element of the processing chamber. Each of the RF filters comprises a first filter stage configured to reject a first frequency, a second filter stage coupled to the first filter stage and configured to reject a second frequency, and a third filter stage coupled to the second filter stage and configured to reject the first frequency. Further, the first filter stage comprises a first inductor and a first capacitance, the second filter stage comprises a second inductor and a second capacitance, the third filter stage comprises a third inductor and a third capacitance.

    ETCH RATE AND CRITICAL DIMENSION UNIFORMITY BY SELECTION OF FOCUS RING MATERIAL
    10.
    发明申请
    ETCH RATE AND CRITICAL DIMENSION UNIFORMITY BY SELECTION OF FOCUS RING MATERIAL 审中-公开
    通过选择聚焦材料的蚀刻速率和关键尺寸均匀性

    公开(公告)号:US20170011891A1

    公开(公告)日:2017-01-12

    申请号:US15276423

    申请日:2016-09-26

    Abstract: A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface.

    Abstract translation: 提供了一种用于等离子体蚀刻处理室中的衬底的方法和装置。 聚焦环组件围绕衬底支撑件,在衬底的边缘附近提供均匀的加工条件。 聚焦环组件包括两个环,第一环和第二环,第一环包括石英,第二环包括单晶硅,碳化硅,氮化硅,碳氧化硅,氮氧化硅或其组合。 第二环设置在基板边缘附近的第一环上方,并且在衬底的边缘上方产生均匀的电场和气体组成,导致穿过衬底表面的均匀蚀刻。

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