摘要:
Examples described herein provide a system, a software application, and a method of a lithography process to write multiple tones in a single pass. A system includes a stage and a lithography system. The lithography system includes image projection systems, a controller, and memory. The controller is coupled to the memory, which stores instruction code. Execution of the instruction code by the controller causes the controller to control the stage and the image projection systems to iteratively expose a photoresist supported by the stage and to move the stage relative to the image projection systems a step distance between sequential pairs of the exposures. Each exposure includes using write beam(s) projected from the image projection systems. Each exposure is at a respective one of different dosage amounts. An accumulation of the different dosage amounts is a full tone dosage amount for the photoresist.
摘要:
Embodiments of the present disclosure generally relate to an image projection system. The image projection system includes an active matrix solid state emitter (SSE) device. The active matrix solid state emitter includes a substrate, a silicon layer, and a emitter substrate. The silicon layer is deposited over the substrate having a plurality of transistors formed therein. The emitter substrate is positioned between the silicon layer and the substrate. The emitter substrate comprises a plurality of emitter arrays. Each emitter array defines a pixel, wherein one pixel comprises one or more transistors from the plurality of transistors. Each transistor is configured to receive a variable amount of current.
摘要:
Embodiments disclosed herein relate to an exposure pattern alteration software application which manipulates exposure polygons having lines with angles substantially close to angles of symmetry of a hex close pack arrangement, which suffer from long jogs. Long jogs present themselves as high edge placement error regions. As such, the exposure pattern alteration software application provides for line wave reduction by serrating polygon edges at affected angles to reduce edge placement errors during maskless lithography patterning in a manufacturing process.
摘要:
Embodiments disclosed herein relate to an exposure pattern alteration software application which manipulates exposure polygons having lines with angles substantially close to angles of symmetry of a hex close pack arrangement, which suffer from long jogs. Long jogs present themselves as high edge placement error regions. As such, the exposure pattern alteration software application provides for line wave reduction by serrating polygon edges at affected angles to reduce edge placement errors during maskless lithography patterning in a manufacturing process.
摘要:
Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the critical dimensions and line edge roughness. In various embodiments, an ultra-conformal carbon-based material is deposited over features formed in a high-resolution photoresist. The conformal organic layer formed over the photoresist thus reduces both the critical dimensions and the line edge roughness of the features.
摘要:
Embodiments herein describe a sub-micron 3D diffractive optics element and a method for forming the sub-micron 3D diffractive optics element. In a first embodiment, a method is provided for forming a sub-micron 3D diffractive optics element on a film stack disposed on a substrate without planarization. The method includes forming a hardmask on a top surface of a film stack. Forming a mask material on a portion of the top surface and a portion of the hardmask. Etching the top surface. Trimming the mask. Etching the top surface again. Trimming the mask a second time. Etching the top surface yet again and then stripping the mask material.
摘要:
Examples described herein provide a projection system, and a software application and a method related thereto. A system includes a pixelated light source and an optical relay. The pixelated light source includes an array of spatial light modulator pixels. Each spatial light modulator pixel being individually controllable to selectively project a beam of light. The optical relay includes an optically reflective surface and an actuator coupled to the optically reflective surface. The actuator is configured to move the optically reflective surface. The pixelated light source and the optical relay are configured such that one or more beams projected from the pixelated light source are reflected off of the optically reflective surface and form an image of the optical relay in a focal plane. Movement of the optically reflective surface causes the respective beams to be at varying locations in the focal plane.
摘要:
A method of method of operating a multibeamlet charged particle device is disclosed. In the method, a target attached to a stage is translated, and each step of selecting beamlets, initializing beamlets, and exposing the target is repeated. The step of selecting beamlets includes passing a reconfigurable plurality of selected beamlets through the blanking circuit. The step of initializing beamlets includes pointing each of the selected beamlets in an initial direction. The step of exposing the target includes scanning each of the selected beamlets from the initial direction to a final direction, and irradiating a plurality of regions of the target on the stage with the selected beamlets.
摘要:
Embodiments of the present disclosure provide methods for producing images on substrates. The method includes providing a p-polarization beam to a first mirror cube having a first digital micromirror device (DMD), providing an s-polarization beam to a second mirror cube having a second DMD, and reflecting the p-polarization beam off the first DMD and reflecting the s-polarization beam off the second DMD such that the p-polarization beam and the s-polarization beam are reflected towards a light altering device configured to produce a plurality of superimposed images on the substrate.
摘要:
Disclosed are methods and apparatus for a shadow mask. A shadow mask (200), comprising: a frame (210) made of a metallic material, and one or more mask patterns (205) coupled to the frame (210), the one or more mask patterns (205) comprising a metal having a coefficient of thermal expansion less than or equal to about 14 microns/meter/degrees Celsius and having a plurality of openings (215) formed therein, the metal having a thickness of about 5 microns to about 50 microns and having borders (355) formed therein each defining a fine opening (215) having a recessed surface (370) formed on a substrate contact surface (375) thereof.