公开(公告)号：US20230323536A1

公开(公告)日：2023-10-12

申请号：US18333361

申请日：2023-06-12

Applicant: Applied Materials, Inc.

Inventor： Kirankumar Neelasandra SAVANDAIAH ,  Srinivasa Rao YEDLA ,  Nitin Bharadwaj SATYAVOLU ,  Ganesh SUBBUSWAMY ,  Devi Raghavee VEERAPPAN ,  Thomas BREZOCZKY

IPC: C23C16/455 ,  C23C14/22 ,  C23C14/34

CPC classification number: C23C16/45574 ,  C23C16/45544 ,  C23C14/34 ,  C23C14/228

Abstract: Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.

公开(公告)号：US20220243331A1

公开(公告)日：2022-08-04

申请号：US17166762

申请日：2021-02-03

Applicant: Applied Materials, Inc.

Inventor： Kirankumar Neelasandra SAVANDAIAH ,  Srinivasa Rao YEDLA ,  Nitin Bharadwaj SATYAVOLU ,  Ganesh SUBBUSWAMY ,  Devi Raghavee VEERAPPAN ,  Thomas BREZOCZKY

IPC: C23C16/455 ,  C23C14/34 ,  C23C14/22

Abstract: Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.