公开(公告)号：US12043896B2

公开(公告)日：2024-07-23

申请号：US18333361

申请日：2023-06-12

Applicant: Applied Materials, Inc.

Inventor： Kirankumar Neelasandra Savandaiah ,  Srinivasa Rao Yedla ,  Nitin Bharadwaj Satyavolu ,  Ganesh Subbuswamy ,  Devi Raghavee Veerappan ,  Thomas Brezoczky

IPC: C23C16/40 ,  C23C14/22 ,  C23C14/34 ,  C23C16/455

CPC classification number: C23C16/45574 ,  C23C14/228 ,  C23C14/34 ,  C23C16/45544

Abstract: Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.

公开(公告)号：USD1052548S1

公开(公告)日：2024-11-26

申请号：US29895796

申请日：2023-06-26

Applicant: Applied Materials, Inc.

Designer： Devi Raghavee Veerappan ,  Xiaoxiong Yuan ,  Peiyu Zhang ,  Borui Xia ,  Chih-Hsun Hsu

公开(公告)号：US20250140538A1

公开(公告)日：2025-05-01

申请号：US18495458

申请日：2023-10-26

Applicant: Applied Materials, Inc.

Inventor： Devi Raghavee Veerappan ,  Ajit Balakrishna

IPC: H01J37/32 ,  G06F30/27

Abstract: A method for estimating pressure values within a processing chamber is provided. The method can include receiving a measurement of a pressure at a terminal end of an exit flow path from a processing chamber, and processing the measurement of the pressure using a model including conductance values for a plurality of segments of the exit flow path to estimate one or more pressure values within the processing chamber.

公开(公告)号：US11674227B2

公开(公告)日：2023-06-13

申请号：US17166762

申请日：2021-02-03

Applicant: Applied Materials, Inc.

Inventor： Kirankumar Neelasandra Savandaiah ,  Srinivasa Rao Yedla ,  Nitin Bharadwaj Satyavolu ,  Ganesh Subbuswamy ,  Devi Raghavee Veerappan ,  Thomas Brezoczky

IPC: C23C16/40 ,  C23C16/455 ,  C23C14/22 ,  C23C14/34

CPC classification number: C23C16/45574 ,  C23C14/228 ,  C23C14/34 ,  C23C16/45544

Abstract: Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.