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公开(公告)号：US11018009B2
公开(公告)日：2021-05-25
申请号：US16381776
申请日：2019-04-11
Applicant: APPLIED MATERIALS, INC.
Inventor： Guoqiang Jian , Wei Tang , Chi-Chou Lin , Paul Ma , Yixiong Yang , Mei Chang , Wenyi Liu
IPC: H01L21/28 , H01L21/285 , H01L29/49 , H01L21/02 , H01L21/324 , H01L29/78 , H01L21/67 , H01L29/66
Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.
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公开(公告)号：US11932939B2
公开(公告)日：2024-03-19
申请号：US17242898
申请日：2021-04-28
Applicant: APPLIED MATERIALS, INC.
Inventor： Muhammad M. Rasheed , Srinivas Gandikota , Mario Dan Sanchez , Guoqiang Jian , Yixiong Yang , Deepak Jadhav , Ashutosh Agarwal
IPC: C23C16/455 , C23C16/44 , C23C16/452 , H01J37/32
CPC classification number: C23C16/45544 , C23C16/4405 , C23C16/4408 , C23C16/4412 , C23C16/452 , C23C16/45502 , C23C16/45536 , C23C16/45565 , C23C16/45591 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32834
Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a lid for a substrate processing chamber includes: a lid plate comprising an upper surface and a contoured bottom surface, the upper surface having a central opening and the contoured bottom surface having a first portion that extends downwardly and outwardly from the central opening to a peripheral portion of the lid plate and a second portion that extends radially outward along the peripheral portion of the lid plate; an upper flange extending radially outward from the lid plate; and one or more channels formed through the lid plate from the upper surface of the lid plate to the second portion of the contoured bottom surface.
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公开(公告)号：US20190341268A1
公开(公告)日：2019-11-07
申请号：US16400248
申请日：2019-05-01
Applicant: Applied Materials, Inc.
Inventor： Wenyu Zhang , Yixiong Yang , Mario D. Sanchez , Guoqiang Jian , Wei Tang , Paul F. Ma
IPC: H01L21/3213 , H01L29/49
Abstract: Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.
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公开(公告)号：US10755947B2
公开(公告)日：2020-08-25
申请号：US16400248
申请日：2019-05-01
Applicant: Applied Materials, Inc.
Inventor： Wenyu Zhang , Yixiong Yang , Mario D. Sanchez , Guoqiang Jian , Wei V. Tang , Paul F. Ma
IPC: H01L21/321 , H01L21/3213 , H01L29/49
Abstract: Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.
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公开(公告)号：US20190080904A1
公开(公告)日：2019-03-14
申请号：US16129223
申请日：2018-09-12
Applicant: Applied Materials, Inc.
Inventor： Jeffrey W. Anthis , Chang Ke , Pratham Jain , Benjamin Schmiege , Guoqiang Jian , Michael S. Jackson , Lei Zhou , Paul F. Ma , Liqi Wu
IPC: H01L21/02 , H01L21/311 , H01L21/033
Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.
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公开(公告)号：US09595466B2
公开(公告)日：2017-03-14
申请号：US14717740
申请日：2015-05-20
Applicant: APPLIED MATERIALS, INC.
Inventor： Xinyu Fu , Srinivas Gandikota , Mei Chang , Seshadri Ganguli , Guoqiang Jian , Yixiong Yang , Vikash Banthia , Jonathan Bakke
IPC: H01L21/44 , H01L21/768
CPC classification number: H01L21/76816 , H01L21/32135 , H01L21/76843 , H01L21/76865 , H01L21/76877 , H01L21/76879
Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WClx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.
Abstract translation: 本发明提供蚀刻基板的方法。 在一些实施例中，用于蚀刻设置在处理室的处理体积内的衬底的方法包括：（a）将设置在衬底顶部的第一层暴露于包含氯化钨（WClx）的第一气体第一时间段 第一压力，其中x为5或6; （b）使用惰性气体吹扫第一气体的处理量第二段; （c）在清洗第一气体的处理容积之后，将衬底暴露于含氢气体持续第三时间以蚀刻第一层; 和（d）使用惰性气体净化含氢气体的处理量第四个时间段。
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7.发明授权
公开(公告)号：US11384432B2
公开(公告)日：2022-07-12
申请号：US14734838
申请日：2015-06-09
Applicant: APPLIED MATERIALS, INC.
Inventor： Muhammad M. Rasheed , Srinivas Gandikota , Mario Dan Sanchez , Guoqiang Jian , Yixiong Yang , Deepak Jadhav , Ashutosh Agarwal
IPC: C23C16/455 , C23C16/44 , C23C16/452 , H01J37/32
Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.
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公开(公告)号：US11355391B2
公开(公告)日：2022-06-07
申请号：US16803842
申请日：2020-02-27
Applicant: Applied Materials, Inc.
Inventor： Xi Cen , Feiyue Ma , Kai Wu , Yu Lei , Kazuya Daito , Yi Xu , Vikash Banthia , Mei Chang , He Ren , Raymond Hoiman Hung , Yakuan Yao , Avgerinos V. Gelatos , David T. Or , Jing Zhou , Guoqiang Jian , Chi-Chou Lin , Yiming Lai , Jia Ye , Jenn-Yue Wang
IPC: H01L21/768 , H01L21/02 , H01L21/3213
Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.
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公开(公告)号：US10199230B2
公开(公告)日：2019-02-05
申请号：US14790862
申请日：2015-07-02
Applicant: APPLIED MATERIALS, INC.
Inventor： Seshadri Ganguli , Yixiong Yang , Bhushan N. Zope , Xinyu Fu , Avgerinos V. Gelatos , Guoqiang Jian , Bo Zheng
IPC: H01L21/285 , H01L21/768 , H01L23/532
Abstract: Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer.
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公开(公告)号：US09947578B2
公开(公告)日：2018-04-17
申请号：US15358690
申请日：2016-11-22
Applicant: APPLIED MATERIALS, INC.
Inventor： Yu Lei , Vikash Banthia , Kai Wu , Xinyu Fu , Yi Xu , Kazuya Daito , Feiyue Ma , Pulkit Agarwal , Chi-Chou Lin , Dien-Yeh Wu , Guoqiang Jian , Wei V. Tang , Jonathan Bakke , Mei Chang , Sundar Ramamurthy
IPC: H01L21/4763 , H01L21/768 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/52 , H01L21/311 , C23C16/02 , C23C16/04 , C23C16/06 , C23C16/08 , C23C16/505 , C23C16/54
CPC classification number: H01L21/76843 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/06 , C23C16/08 , C23C16/4401 , C23C16/45536 , C23C16/45544 , C23C16/46 , C23C16/505 , C23C16/52 , C23C16/54 , H01L21/31116 , H01L21/76802 , H01L21/76877
Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.
