摘要:
A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.
摘要:
A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, and a pad cooling assembly. The pad cooling assembly has an arm extending over the platen, a nozzle suspended by the arm and coupled to a source of coolant fluid, the nozzle positioned to spray coolant fluid from the source onto the polishing surface of the polishing pad, and an opening in the arm adjacent the nozzle and a passage extending in the arm from the opening, the opening positioned sufficiently close to the nozzle that a flow of coolant fluid from the nozzle entrains air from the opening.
摘要:
An apparatus for steam treatment of a conditioner head and/or conditioner disk in a chemical mechanical polishing system includes a conditioner cleaning cup, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into a cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.
摘要:
A method of cleaning for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto a component in the polishing system while the component is spaced away from a polishing pad of the polishing system to clean the component, and moving the component into contact with the polishing pad.
摘要:
A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.
摘要:
A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad.
摘要:
In some embodiments, an apparatus for cleaning a substrate is provided that includes (1) a substrate chuck configured to support a substrate with a front side of the substrate accessible; (2) a buff pad assembly configured to support a buff pad having a diameter smaller than a diameter of the substrate; and (3) a swing arm coupled to the buff pad and configured to position and rotate the buff pad along the front side of the substrate, and control an amount of force applied by the buff pad against the front side of the substrate during cleaning. The substrate chuck, buff pad assembly and swing arm are configured to buff clean the substrate. Numerous additional aspects are disclosed.
摘要:
In some embodiments, an apparatus for cleaning a substrate is provided that includes (1) a substrate chuck configured to support a substrate with a front side of the substrate accessible; (2) a buff pad assembly configured to support a buff pad having a diameter smaller than a diameter of the substrate; and (3) a swing arm coupled to the buff pad and configured to position and rotate the buff pad along the front side of the substrate, and control an amount of force applied by the buff pad against the front side of the substrate during cleaning. The substrate chuck, buff pad assembly and swing arm are configured to buff clean the substrate. Numerous additional aspects are disclosed.
摘要:
A control assembly that may be used with a chemical mechanical polishing (CMP) cleaning unit may include a linkage arm that extends and retracts, a load cell sensor that senses a force on the linkage arm, and a motor. The motor may drive the linkage arm to an extended or retracted position to cause a scrubber brush assembly of the cleaning unit to move away from or into contact with a substrate to be cleaned. In response to a force sensed by the load cell sensor, the motor may adjust the position of the linkage arm to cause an adjustment of the scrubber brush assembly position relative to the substrate being cleaned. Methods of controlling a scrubber brush force are also provided, as are other aspects.
摘要:
An apparatus for steam treatment of a conditioner head and/or conditioner disk in a chemical mechanical polishing system includes a conditioner cleaning cup, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into a cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.