公开(公告)号：US12049696B2

公开(公告)日：2024-07-30

申请号：US17344854

申请日：2021-06-10

Applicant: Applied Materials, Inc.

Inventor： Xiaowei Wu ,  Jennifer Y. Sun ,  Michael R. Rice

IPC: C23C14/00 ,  C23C14/08 ,  C23C16/40 ,  C23C16/455 ,  C30B29/16 ,  C30B29/68 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01L23/29 ,  H10N60/85

CPC classification number: C23C16/405 ,  C23C14/083 ,  C23C16/403 ,  C23C16/45542 ,  C30B29/16 ,  C30B29/68 ,  H01J37/32477 ,  H01L21/02192 ,  H01L21/0228 ,  H01L21/67161 ,  H01L23/291 ,  H10N60/855

Abstract: A lid or other chamber component for a process chamber comprises a) at least one surface comprising a first ceramic material, wherein the first ceramic material comprises Y3Al5O12 and b) an internal region beneath the at least one surface comprising a second ceramic material, wherein the second ceramic material comprises a combination of Al2O3 and ZrO2.

公开(公告)号：US20240153745A1

公开(公告)日：2024-05-09

申请号：US17981394

申请日：2022-11-05

Applicant: Applied Materials, Inc.

Inventor： Katherine Woo ,  Jennifer Y. Sun ,  Jian Li ,  Wenhao Zhang ,  Mayur Govind Kulkarni ,  Chidambara A. Ramalingam ,  Ryan Sheil ,  Martin J. Seamons ,  Nitin Deepak

IPC: H01J37/32 ,  C23C16/455 ,  C23C28/04 ,  C25D11/18

CPC classification number: H01J37/32495 ,  C23C16/45525 ,  C23C28/046 ,  C25D11/18 ,  H01J37/32467

Abstract: Semiconductor fabrication component preparation methods are described. In embodiments, the methods include forming a first layer on a surface of the semiconductor fabrication component. The first layer is characterized by a porosity of greater than or about 0.01 vol. %. The methods further include depositing a second layer on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %. Treated semiconductor fabrication components are also described. In embodiments, the treated components include a first layer formed in the surface of the semiconductor fabrication component, where the first layer is characterized by a porosity of greater than or about 0.01 vol. %., and a second layer positioned on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %.

公开(公告)号：US20230339065A1

公开(公告)日：2023-10-26

申请号：US18215633

申请日：2023-06-28

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Vahid Firouzdor ,  David Koonce ,  Biraja Prasad Kanungo

IPC: B24B31/00 ,  B24B5/40 ,  B23B35/00 ,  B24B33/02 ,  B24B31/116 ,  B24B57/04

CPC classification number: B24B31/006 ,  B23B35/00 ,  B24B5/40 ,  B24B31/003 ,  B24B31/116 ,  B24B33/02 ,  B24B57/04 ,  B23B2220/445 ,  B23B2226/18

Abstract: Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 µin.

公开(公告)号：US11773479B2

公开(公告)日：2023-10-03

申请号：US17038906

申请日：2020-09-30

Applicant: Applied Materials, Inc.

Inventor： Vahid Firouzdor ,  Biraja P. Kanungo ,  Jennifer Y. Sun ,  Martin J. Salinas ,  Jared Ahmad Lee

IPC: C23C14/08 ,  C23C14/02 ,  C23C16/458 ,  C23C16/50 ,  C23C14/06 ,  C23C14/22

CPC classification number: C23C14/081 ,  C23C14/024 ,  C23C14/0635 ,  C23C14/08 ,  C23C14/083 ,  C23C14/221 ,  C23C16/4581 ,  C23C16/50

Abstract: An article such as a susceptor includes a body of a thermally conductive material coated by a first protective layer and a second protective layer over a surface of the body. The first protective layer is a thermally conductive ceramic. The second protective layer covers the first protective layer and is a plasma resistant ceramic thin film that is resistant to cracking at temperatures of 650 degrees Celsius.

公开(公告)号：US11724353B2

公开(公告)日：2023-08-15

申请号：US17834207

申请日：2022-06-07

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Vahid Firouzdor ,  David Koonce ,  Biraja Prasad Kanungo

IPC: B24B31/00 ,  B24B31/116 ,  B24B57/04 ,  B24B5/40 ,  B23B35/00 ,  B24B33/02

CPC classification number: B24B31/006 ,  B23B35/00 ,  B24B5/40 ,  B24B31/003 ,  B24B31/116 ,  B24B33/02 ,  B24B57/04 ,  B23B2220/445 ,  B23B2226/18

Abstract: Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 μin.

公开(公告)号：US11658014B2

公开(公告)日：2023-05-23

申请号：US16846295

申请日：2020-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Pingyan Lei ,  Dien-Yeh Wu ,  Xiao Ming He ,  Jennifer Y. Sun ,  Lei Zhou ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Mei Chang ,  Steven D. Marcus

IPC: C23C16/06 ,  C23C16/44 ,  H01J37/32 ,  H01L21/67 ,  C23C16/455 ,  H01L21/285

CPC classification number: H01J37/32477 ,  C23C16/06 ,  C23C16/4404 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  H01J37/32467 ,  H01L21/28556 ,  H01L21/67017 ,  H01J2237/3321

Abstract: Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

公开(公告)号：US11639547B2

公开(公告)日：2023-05-02

申请号：US16401467

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Prerna Goradia ,  Jennifer Y. Sun ,  Xiaowei Wu ,  Geetika Bajaj ,  Atul Chaudhari ,  Ankur Kadam

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/18 ,  C23C16/27 ,  C23C16/40

Abstract: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.

公开(公告)号：US11587771B2

公开(公告)日：2023-02-21

申请号：US15982888

申请日：2018-05-17

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Dmitry Lubomirsky

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  C23C4/134 ,  C23C4/11 ,  C04B41/50 ,  C04B41/00 ,  C04B41/87 ,  C04B35/10 ,  C23C4/10 ,  C04B35/00 ,  H01L21/3065 ,  H01L21/56 ,  H01L21/48 ,  C04B35/505 ,  C04B35/48 ,  B32B15/20 ,  B32B15/04 ,  C04B35/01 ,  C04B35/50 ,  C23C26/00 ,  C23C30/00 ,  C23C4/12 ,  B32B18/00

Abstract: A chamber component comprises a body and a plasma sprayed ceramic coating on the body. The plasma sprayed ceramic coating is applied using a method that includes feeding powder comprising a yttrium oxide containing solid solution into a plasma spraying system, wherein the powder comprises a majority of donut-shaped particles, each of the donut-shaped particles having a spherical body with indentations on opposite sides of the spherical body. The method further includes plasma spray coating the body to apply a ceramic coating onto the body, wherein the ceramic coating comprises the yttrium oxide containing solid solution, wherein the donut-shaped particles cause the ceramic coating to have an improved morphology and a decreased porosity as compared to powder particles of other shapes, wherein the improved surface morphology comprises a reduced amount of surface nodules.

公开(公告)号：US11566317B2

公开(公告)日：2023-01-31

申请号：US15711885

申请日：2017-09-21

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC: C04B41/89 ,  C04B41/00 ,  C04B41/52 ,  C04B35/505 ,  C04B35/622 ,  C04B41/45 ,  C04B35/00 ,  C23C14/08 ,  C04B41/50 ,  C23C14/46 ,  C23C14/58 ,  H01J37/32 ,  C04B41/87

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF3, Er4Al2O9, ErAlO3, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

公开(公告)号：US11424136B2

公开(公告)日：2022-08-23

申请号：US17137076

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Vahid Firouzdor ,  Ying Zhang

IPC: H01J37/32 ,  H01L21/67 ,  B65D43/02 ,  C23C4/11 ,  C23C4/12 ,  C23C4/04 ,  C23C4/10 ,  C23C4/01 ,  C23C14/00 ,  C23C4/134 ,  C23C4/14 ,  C23C4/16 ,  C23C14/08

Abstract: A component for a processing chamber includes a ceramic body having at least one surface with a first average surface roughness. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness that is less than the first average surface roughness.