METHODS AND APPARATUS FOR WAFER TEMPERATURE MEASUREMENT

    公开(公告)号:US20190228997A1

    公开(公告)日:2019-07-25

    申请号:US16249588

    申请日:2019-01-16

    Abstract: A method and apparatus to determine a temperature of a substrate using a spectrum of radiation is disclosed herein. In one aspect, a process chamber includes a lamp assembly optically coupled to a spectrometer. The spectrometer is used to determine a temperature of a substrate within the process chamber. A controller is coupled to the spectrometer and controls the lamp assembly to selectively heat and cool the substrate. In another aspect, a method of includes exposing a substrate to a radiation source. A spectrum of radiation is detected by a spectrometer across a substrate. The spectrum of radiation passed through the substrate is determined and used to determine a temperature of the substrate.

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