公开(公告)号：US20040137757A1

公开(公告)日：2004-07-15

申请号：US10342085

申请日：2003-01-13

Applicant: Applied Materials, Inc.

Inventor： Lihua Li ,  Tzu-Fang Huang ,  Juan C. Rocha-Alvarez ,  Li-Qun Xia

IPC: H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31633 ,  H01L21/76826

Abstract: One embodiment of the present invention is a method for depositing low-k dielectric films that includes steps of: (a) CVD-depositing a low-k dielectric film; and (b) plasma treating the CVD-deposited, low-k dielectric film.

Abstract translation: 本发明的一个实施例是一种用于沉积低k电介质膜的方法，包括以下步骤：（a）CVD沉积低k电介质膜; 和（b）等离子体处理CVD沉积的低k电介质膜。