公开(公告)号：US11610799B2

公开(公告)日：2023-03-21

申请号：US17024802

申请日：2020-09-18

申请人： Applied Materials, Inc.

发明人： Bhaskar Prasad ,  Kirankumar Neelasandra Savandaiah ,  Srinivasa Rao Yedla ,  Nitin Bharadwaj Satyavolu ,  Hari Prasath Rajendran ,  Lakshmikanth Krishnamurthy Shirahatti ,  Thomas Brezoczky

IPC分类号： H01T23/00 ,  H01L21/683 ,  H01L21/67

摘要： In one example, an electrostatic chuck comprises a chuck body having a top surface configured to support a substrate and a bottom surface opposite the top surface. The chuck body comprises one or more chucking electrodes, and one or more heating elements. The chuck body further comprises first terminals disposed on the bottom surface of the chuck body and coupled with the one or more heating elements, second terminals disposed on the bottom surface of the chuck body and coupled with the one or more chucking electrodes, and third terminals disposed on the bottom first surface of the chuck body and coupled with the one or more chucking electrodes.

公开(公告)号：US11289312B2

公开(公告)日：2022-03-29

申请号：US16438560

申请日：2019-06-12

申请人： APPLIED MATERIALS, INC.

发明人： Adolph M. Allen ,  Vanessa Faune ,  Zhong Qiang Hua ,  Kirankumar Neelasandra Savandaiah ,  Anantha K. Subramani ,  Philip A. Kraus ,  Tza-Jing Gung ,  Lei Zhou ,  Halbert Chong ,  Vaibhav Soni ,  Kishor Kalathiparambil

IPC分类号： H01J37/32 ,  H01J37/34 ,  C23C16/455 ,  C23C14/54

摘要： Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.

公开(公告)号：US20220415636A1

公开(公告)日：2022-12-29

申请号：US17362925

申请日：2021-06-29

申请人： Applied Materials, Inc.

发明人： Jothilingam Ramalingam ,  Yong Cao ,  Ilya Lavitsky ,  Keith A. Miller ,  Tza-Jing Gung ,  Xianmin Tang ,  Shane Lavan ,  Randy D. Schmieding ,  John C. Forster ,  Kirankumar Neelasandra Savandaiah

IPC分类号： H01J37/34 ,  C23C14/56 ,  C23C14/54 ,  H01J37/32

摘要： A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

公开(公告)号：USD970566S1

公开(公告)日：2022-11-22

申请号：US29813065

申请日：2021-10-26

申请人： APPLIED MATERIALS, INC.

设计人： Martin Riker ,  William Fruchterman ,  Ilya Lavitsky ,  Srinivasa Rao Yedla ,  Kirankumar Neelasandra Savandaiah

公开(公告)号：US11600477B2

公开(公告)日：2023-03-07

申请号：US17121603

申请日：2020-12-14

申请人： Applied Materials, Inc.

发明人： Kirankumar Neelasandra Savandaiah ,  Shane Lavan ,  Sundarapandian Ramalinga Vijayalakshmi Reddy ,  Randal Dean Schmieding ,  Yong Cao

IPC分类号： H01J37/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/28 ,  C23C14/56

摘要： Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.

公开(公告)号：US11270898B2

公开(公告)日：2022-03-08

申请号：US16569593

申请日：2019-09-12

申请人： APPLIED MATERIALS, INC.

发明人： Jothilingam Ramalingam ,  Kirankumar Neelasandra Savandaiah ,  Fuhong Zhang ,  William Johanson

IPC分类号： H01L21/67

摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, a shroud for controlling gas flow in a process chamber includes a closed walled body having an upper end and a lower end, the closed walled body defining a first opening of the shroud at the lower end and a second opening of the shroud at the upper end, wherein the second opening is offset from the first opening; and a top wall disposed atop a portion of the upper end of the closed walled body in a position above the first opening to define, together with a remaining portion of the upper end of the closed walled body, the second opening, wherein the shroud is configured to divert a gas flow from the second opening through the first opening.

公开(公告)号：USD940765S1

公开(公告)日：2022-01-11

申请号：US29760578

申请日：2020-12-02

申请人： Applied Materials, Inc.

设计人： David Gunther ,  Jiao Song ,  Kirankumar Neelasandra Savandaiah ,  Madan Kumar Shimoga Mylarappa

公开(公告)号：USD888903S1

公开(公告)日：2020-06-30

申请号：US29673685

申请日：2018-12-17

申请人： APPLIED MATERIALS, INC.

设计人： David Gunther ,  Cheng-Hsiung Tsai ,  Kirankumar Neelasandra Savandaiah

公开(公告)号：US11600507B2

公开(公告)日：2023-03-07

申请号：US17016030

申请日：2020-09-09

申请人： Applied Materials, Inc.

发明人： Bhaskar Prasad ,  Kirankumar Neelasandra Savandaiah ,  Srinivasa Rao Yedla ,  Nitin Bharadwaj Satyavolu ,  Thomas Brezoczky

IPC分类号： H01L21/683 ,  H01L21/68 ,  B65G47/92 ,  H01L21/687 ,  H01L21/67

摘要： A pedestal assembly for a processing region and comprising first pins coupled to a substrate support, configured to mate with first terminals of an electrostatic chuck, and are configured to be coupled to a first power source. Each of the first pins comprises an interface element, and a compliance element supporting the interface element. Second pins are coupled to the substrate support, configured to mate with second terminals of the electrostatic chuck, and configured to couple to a second power source. Alignment elements are coupled to the substrate support and are configured to interface with centering elements of the electrostatic chuck. The flexible element is coupled to the substrate support, configured to interface with a passageway of the electrostatic chuck, and configured to be coupled to a gas source.

公开(公告)号：US20220415637A1

公开(公告)日：2022-12-29

申请号：US17861421

申请日：2022-07-11

申请人： Applied Materials, Inc.

发明人： Jothilingam Ramalingam ,  Yong Cao ,  Ilya Lavitsky ,  Keith A. Miller ,  Tza-Jing Gung ,  Xianmin Tang ,  Shane Lavan ,  Randy D. Schmieding ,  John C. Forster ,  Kirankumar Neelasandra Savandaiah

IPC分类号： H01J37/34 ,  C23C14/54 ,  H01J37/32 ,  C23C14/56

摘要： A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.