公开(公告)号：US11817331B2

公开(公告)日：2023-11-14

申请号：US16940058

申请日：2020-07-27

申请人： Applied Materials, Inc.

发明人： Srinivasa Rao Yedla ,  Kirankumar Neelasandra Savandaiah ,  Thomas Brezoczky ,  Bhaskar Prasad ,  Nitin Bharadwaj Satyavolu

IPC分类号： H01L21/67 ,  B65G29/00 ,  B25J15/00

CPC分类号： H01L21/67196 ,  B25J15/009 ,  B25J15/0019 ,  B65G29/00 ,  H01L21/67167 ,  B65G2201/0297 ,  B65G2814/0313

摘要： A shutter disc for use in a cluster tool assembly having a processing chamber and a transfer arm includes an inner disc and an outer disc configured to be disposed on the inner disc. The inner disc includes a plurality of locating features configured to mate with locating pins of a transfer arm of a cluster tool assembly and a plurality of centering features configured to mate with alignment elements of a substrate support disposed in the processing chamber of the cluster tool assembly.

公开(公告)号：US11955355B2

公开(公告)日：2024-04-09

申请号：US17185360

申请日：2021-02-25

申请人： Applied Materials, Inc.

发明人： Kirankumar Neelasandra Savandaiah ,  Nitin Bharadwaj Satyavolu ,  Srinivasa Rao Yedla ,  Bhaskar Prasad ,  Thomas Brezoczky

IPC分类号： H01L21/67 ,  C23C14/35 ,  C23C14/50 ,  H01J37/32 ,  H01J37/34

CPC分类号： H01L21/67126 ,  C23C14/35 ,  C23C14/50 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3426 ,  H01J2237/2007 ,  H01J2237/332 ,  H01L21/67167 ,  H01L21/67207

摘要： A method and apparatus for substrate processing and a cluster tool including a transfer chamber assembly and a plurality of processing assemblies. Processing chamber volumes are sealed from the transfer chamber volume using a support chuck on which a substrate is disposed. A seal ring assembly is coupled to the support chuck. The seal ring assembly includes an inner assembly, an assembly bellows circumscribing the inner assembly, and a bellows disposed between the inner and outer platform. An inner ring is disposed between inner assembly of the seal ring assembly and the bottom surface of the support chuck. An outer ring disposed between the seal ring assembly and the lower sealing surface of the process chamber wall. The support chuck is raised to form an isolation seal between the processing chamber volume and the transfer chamber volume using the bellows, the inner ring, and the outer ring.

公开(公告)号：US11674227B2

公开(公告)日：2023-06-13

申请号：US17166762

申请日：2021-02-03

申请人： Applied Materials, Inc.

发明人： Kirankumar Neelasandra Savandaiah ,  Srinivasa Rao Yedla ,  Nitin Bharadwaj Satyavolu ,  Ganesh Subbuswamy ,  Devi Raghavee Veerappan ,  Thomas Brezoczky

IPC分类号： C23C16/40 ,  C23C16/455 ,  C23C14/22 ,  C23C14/34

CPC分类号： C23C16/45574 ,  C23C14/228 ,  C23C14/34 ,  C23C16/45544

摘要： Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.

公开(公告)号：US11600507B2

公开(公告)日：2023-03-07

申请号：US17016030

申请日：2020-09-09

申请人： Applied Materials, Inc.

发明人： Bhaskar Prasad ,  Kirankumar Neelasandra Savandaiah ,  Srinivasa Rao Yedla ,  Nitin Bharadwaj Satyavolu ,  Thomas Brezoczky

IPC分类号： H01L21/683 ,  H01L21/68 ,  B65G47/92 ,  H01L21/687 ,  H01L21/67

摘要： A pedestal assembly for a processing region and comprising first pins coupled to a substrate support, configured to mate with first terminals of an electrostatic chuck, and are configured to be coupled to a first power source. Each of the first pins comprises an interface element, and a compliance element supporting the interface element. Second pins are coupled to the substrate support, configured to mate with second terminals of the electrostatic chuck, and configured to couple to a second power source. Alignment elements are coupled to the substrate support and are configured to interface with centering elements of the electrostatic chuck. The flexible element is coupled to the substrate support, configured to interface with a passageway of the electrostatic chuck, and configured to be coupled to a gas source.

公开(公告)号：US12100614B2

公开(公告)日：2024-09-24

申请号：US17233213

申请日：2021-04-16

申请人： Applied Materials, Inc.

发明人： Anubhav Srivastava ,  Bhaskar Prasad ,  Kirankumar Neelasandra Savandaiah ,  Thomas Brezoczky ,  Nitin Bharadwaj Satyavolu

IPC分类号： H01L21/687

CPC分类号： H01L21/68742

摘要： Embodiments of the present disclosure generally relate to lift pins and to apparatus for controlling lift pin movement. In an embodiment, an apparatus for positioning a substrate in a chamber is provided. The apparatus includes a chamber component, a lift pin having a top surface for supporting the substrate and a lift pin shaft and a stopper. The apparatus further includes a compressible element positioned between the chamber component and the stopper, the compressible element further positioned around the lift pin shaft, the lift pin being moveable relative to a substrate transfer plane by movement of a substrate support in contact with the compressible element.

公开(公告)号：US12043896B2

公开(公告)日：2024-07-23

申请号：US18333361

申请日：2023-06-12

申请人： Applied Materials, Inc.

发明人： Kirankumar Neelasandra Savandaiah ,  Srinivasa Rao Yedla ,  Nitin Bharadwaj Satyavolu ,  Ganesh Subbuswamy ,  Devi Raghavee Veerappan ,  Thomas Brezoczky

IPC分类号： C23C16/40 ,  C23C14/22 ,  C23C14/34 ,  C23C16/455

CPC分类号： C23C16/45574 ,  C23C14/228 ,  C23C14/34 ,  C23C16/45544

摘要： Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.

公开(公告)号：US11610799B2

公开(公告)日：2023-03-21

申请号：US17024802

申请日：2020-09-18

申请人： Applied Materials, Inc.

发明人： Bhaskar Prasad ,  Kirankumar Neelasandra Savandaiah ,  Srinivasa Rao Yedla ,  Nitin Bharadwaj Satyavolu ,  Hari Prasath Rajendran ,  Lakshmikanth Krishnamurthy Shirahatti ,  Thomas Brezoczky

IPC分类号： H01T23/00 ,  H01L21/683 ,  H01L21/67

摘要： In one example, an electrostatic chuck comprises a chuck body having a top surface configured to support a substrate and a bottom surface opposite the top surface. The chuck body comprises one or more chucking electrodes, and one or more heating elements. The chuck body further comprises first terminals disposed on the bottom surface of the chuck body and coupled with the one or more heating elements, second terminals disposed on the bottom surface of the chuck body and coupled with the one or more chucking electrodes, and third terminals disposed on the bottom first surface of the chuck body and coupled with the one or more chucking electrodes.