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公开(公告)号：US12148629B2
公开(公告)日：2024-11-19
申请号：US18516238
申请日：2023-11-21
Applicant: Applied Materials, Inc.
Inventor： Kang Zhang , Junqi Wei , Yueh Sheng Ow , Kelvin Boh , Yuichi Wada , Ananthkrishna Jupudi , Sarath Babu
IPC: H01L21/48 , H01L21/02 , H01L21/322 , H01L21/50 , H01L21/60 , H01L21/67 , H01L21/768 , H01L23/00
Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.
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公开(公告)号：US12080522B2
公开(公告)日：2024-09-03
申请号：US16855559
申请日：2020-04-22
Applicant: APPLIED MATERIALS, INC.
Inventor： Sarath Babu , Ananthkrishna Jupudi , Yueh Sheng Ow , Junqi Wei , Kelvin Tai Ming Boh , Kang Zhang , Yuichi Wada
IPC: H01J37/32
CPC classification number: H01J37/32495 , H01J37/3244 , H01J37/32513 , H01J37/32642 , H01J37/32651
Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.
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公开(公告)号：USD971167S1
公开(公告)日：2022-11-29
申请号：US29778108
申请日：2021-04-10
Applicant: APPLIED MATERIALS, INC.
Designer： Sarath Babu , Ananthkrishna Jupudi , Yueh Sheng Ow , Junqi Wei , Kelvin Boh , Yuichi Wada , Kang Zhang
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公开(公告)号：US11881385B2
公开(公告)日：2024-01-23
申请号：US16857828
申请日：2020-04-24
Applicant: APPLIED MATERIALS, INC.
Inventor： Yueh Sheng Ow , Yuichi Wada , Junqi Wei , Kang Zhang , Ananthkrishna Jupudi , Sarath Babu , Kok Seong Teo , Kok Wei Tan
CPC classification number: H01J37/32495 , H01J37/32504 , H01L21/67028 , H01J2237/335
Abstract: Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.
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公开(公告)号：USD931241S1
公开(公告)日：2021-09-21
申请号：US29703658
申请日：2019-08-28
Applicant: APPLIED MATERIALS, INC.
Designer： Sarath Babu , Ananthkrishna Jupudi , Yueh Sheng Ow , Junqi Wei , Kelvin Boh , Yuichi Wada , Kang Zhang
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公开(公告)号：US20210074523A1
公开(公告)日：2021-03-11
申请号：US17012275
申请日：2020-09-04
Applicant: Applied Materials, Inc.
Inventor： Vinodh Ramachandran , Ananthkrishna Jupudi , Sarath Babu
IPC: H01J37/32 , H01L21/683
Abstract: An apparatus, methods and controllers for electrostatically chucking varied substrate materials are disclosed. Some embodiments of the disclosure provide electrostatic chucks with variable polarity and/or voltage. Some embodiments of the disclosure provide electrostatic chucks able to operate as monopolar and bipolar electrostatic chucks. Some embodiments of the disclosure provide bipolar electrostatic chucks able to compensate for substrate bias and produce approximately equal chucking force at different electrodes.
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公开(公告)号：US12100577B2
公开(公告)日：2024-09-24
申请号：US16664117
申请日：2019-10-25
Applicant: APPLIED MATERIALS, INC.
Inventor： Sarath Babu , Ananthkrishna Jupudi , Yueh Sheng Ow , Junqi Wei , Kelvin Boh , Yuichi Wada , Kang Zhang
IPC: H01J37/32
CPC classification number: H01J37/32495 , H01J37/32477 , H01J37/32633 , H01J37/32642 , H01J37/32715 , H01J37/32834 , H01J2237/2007 , H01J2237/335
Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a tubular body having a central opening configured to surround a substrate support, wherein sidewalls of the tubular body do not include any through holes; and a top plate coupled to an upper end of the tubular body and substantially covering the central opening, wherein the top plate has a gas inlet and has a diameter that is greater than an outer diameter of the tubular body, and wherein the tubular body extends straight down from the top plate.
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公开(公告)号：US20240087913A1
公开(公告)日：2024-03-14
申请号：US18516238
申请日：2023-11-21
Applicant: Applied Materials, Inc.
Inventor： Kang Zhang , Junqi Wei , Yueh Sheng Ow , Kelvin Boh , Yuichi Wada , Ananthkrishna Jupudi , Sarath Babu
IPC: H01L21/48 , H01L21/02 , H01L21/322 , H01L21/50 , H01L21/67 , H01L21/768 , H01L23/00
CPC classification number: H01L21/4853 , H01L21/02043 , H01L21/322 , H01L21/50 , H01L21/67011 , H01L21/76841 , H01L24/11 , H01L24/94 , H01L2021/60052
Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.
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公开(公告)号：US11862480B2
公开(公告)日：2024-01-02
申请号：US17498129
申请日：2021-10-11
Applicant: Applied Materials, Inc.
Inventor： Kang Zhang , Junqi Wei , Yueh Sheng Ow , Kelvin Boh , Yuichi Wada , Ananthkrishna Jupudi , Sarath Babu
IPC: H01L21/48 , H01L21/322 , H01L21/02 , H01L23/00 , H01L21/768 , H01L21/67 , H01L21/50 , H01L21/60
CPC classification number: H01L21/4853 , H01L21/02043 , H01L21/322 , H01L21/50 , H01L21/67011 , H01L21/76841 , H01L24/11 , H01L24/94 , H01L2021/60052
Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.
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公开(公告)号：US20220028702A1
公开(公告)日：2022-01-27
申请号：US17498129
申请日：2021-10-11
Applicant: Applied Materials, Inc.
Inventor： Zhang Kang , Junqi Wei , Yueh Sheng Ow , Kelvin Boh , Yuichi Wada , Ananthkrishna Jupudi , Sarath Babu
IPC: H01L21/48 , H01L21/67 , H01L23/00 , H01L21/768 , H01L21/322 , H01L21/50 , H01L21/02 , H01L21/60
Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.
