公开(公告)号：US11591693B2

公开(公告)日：2023-02-28

申请号：US17176411

申请日：2021-02-16

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01L21/285 ,  C23C16/458

摘要： Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US11581165B2

公开(公告)日：2023-02-14

申请号：US17157224

申请日：2021-01-25

申请人： Applied Materials, Inc.

发明人： Saravjeet Singh ,  Kenneth D. Schatz ,  Alan Tso ,  Marlin Wijekoon ,  Dimitri Kioussis

IPC分类号： H01J37/32 ,  H01L21/02 ,  H01L21/311

摘要： The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

公开(公告)号：US20210134676A1

公开(公告)日：2021-05-06

申请号：US17137099

申请日：2020-12-29

申请人： Applied Materials, Inc.

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar ,  James M. Holden

IPC分类号： H01L21/822 ,  H01L21/308 ,  H01L21/67 ,  H01L21/78 ,  H01J37/32 ,  H01L23/544 ,  B23K26/36 ,  H01L21/3065

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

公开(公告)号：US10892198B2

公开(公告)日：2021-01-12

申请号：US16131942

申请日：2018-09-14

申请人： Applied Materials, Inc.

发明人： Chirantha P. Rodrigo ,  Suketu A. Parikh ,  Tsz Keung Cheung ,  Satya Gowthami Achanta ,  Jingchun Zhang ,  Saravjeet Singh ,  Tae Won Kim

IPC分类号： H01L21/768 ,  H01L21/66 ,  H01L21/311 ,  H01L21/3065 ,  H01J37/32

摘要： Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.

公开(公告)号：US20200328065A1

公开(公告)日：2020-10-15

申请号：US16915028

申请日：2020-06-29

申请人： Applied Materials, Inc.

发明人： Tien Fak Tan ,  Saravjeet Singh ,  Dmitry Lubomirsky ,  Tae Wan Kim ,  Kenneth D. Schatz ,  Tae Seung Cho ,  Lok Kee Loh

IPC分类号： H01J37/32 ,  H01J37/04

摘要： An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes.

公开(公告)号：US20200091018A1

公开(公告)日：2020-03-19

申请号：US16131942

申请日：2018-09-14

申请人： Applied Materials, Inc.

发明人： Chirantha P. Rodrigo ,  Suketu A. Parikh ,  Tsz Keung Cheung ,  Satya Gowthami Achanta ,  Jingchun Zhang ,  Saravjeet Singh ,  Tae Won Kim

IPC分类号： H01L21/66 ,  H01L21/3065 ,  H01J37/32

摘要： Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.

公开(公告)号：US20190318911A1

公开(公告)日：2019-10-17

申请号：US15955588

申请日：2018-04-17

申请人： Applied Materials, Inc.

发明人： Tien Fak Tan ,  Saravjeet Singh ,  Dmitry Lubomirsky ,  Tae Wan Kim ,  Kenneth D. Schatz ,  Tae Seung Cho ,  Lok Kee Loh

IPC分类号： H01J37/32 ,  H01J37/04

摘要： An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.

公开(公告)号：US20190304756A1

公开(公告)日：2019-10-03

申请号：US16374420

申请日：2019-04-03

申请人： Applied Materials, Inc.

发明人： Laksheswar Kalita ,  Soonam Park ,  Toan Q. Tran ,  Lili Ji ,  Dmitry Lubomirsky ,  Akhil Devarakonda ,  Tien Fak Tan ,  Tae Won Kim ,  Saravjeet Singh ,  Alexander Tam ,  Jingchun Zhang ,  Jing J. Zhang

IPC分类号： H01J37/32 ,  C23C4/134 ,  C23C4/11

摘要： Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum, stainless steel, or nickel plate defining a plurality of apertures. The plate may include a hybrid coating, and the hybrid coating may include a first layer comprising a corrosion resistant coating. The first layer may extend conformally through each aperture of the plurality of apertures. The hybrid coating may also include a second layer comprising an erosion resistant coating extending across a plasma-facing surface of the semiconductor chamber component.

公开(公告)号：US10163713B2

公开(公告)日：2018-12-25

申请号：US15005700

申请日：2016-01-25

申请人： Applied Materials, Inc.

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar ,  James M. Holden

IPC分类号： H01L21/00 ,  H01L21/822 ,  H01L21/78 ,  H01L21/308 ,  H01J37/32 ,  H01L23/544 ,  B23K26/36 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

公开(公告)号：US09488315B2

公开(公告)日：2016-11-08

申请号：US14207475

申请日：2014-03-12

申请人： APPLIED MATERIALS, INC.

发明人： Roy C. Nangoy ,  Saravjeet Singh

IPC分类号： F16K11/20 ,  F17D1/00

CPC分类号： F17D1/00 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/00 ,  H01L21/67017 ,  Y10T137/8733

摘要： In some embodiments, a gas distribution apparatus may include: a manifold having a gas inlet to receive a process gas from a fast gas exchange unit and a first gas outlet to provide the process gas to a first gas delivery zone; a plurality of flow restrictors fluidly coupled to one another in parallel and to the gas inlet, wherein each of the plurality of flow restrictors are configured to allow at least a portion of a total flow of a process gas through each of the plurality of flow restrictors; and a plurality of valves each coupled to respective ones of the plurality of flow restrictors, wherein the plurality of valves are configured to be selectively opened to allow the process gas to flow through selective ones of the plurality of flow restrictors to provide a desired percentage of a total flow of the process gas to the outlet.

摘要翻译： 在一些实施例中，气体分配设备可以包括：具有气体入口以从快速气体交换单元接收工艺气体的歧管和第一气体出口，以将处理气体提供给第一气体输送区域; 多个流量限制器并联流体耦合到气体入口，其中多个限流器中的每一个被配置为允许处理气体的总流量的至少一部分通过多个流量限制器中的每一个 ; 以及多个阀，每个阀分别联接到所述多个限流器中的相应流量限制器，其中所述多个阀被配置为选择性地打开以允许所述工艺气体流过所述多个限流器中的选择性流量限制器，以提供所需的百分比 工艺气体到出口的总流量。