公开(公告)号：US20230223281A1

公开(公告)日：2023-07-13

申请号：US18175104

申请日：2023-02-27

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Zilu Weng ,  Dmitry Lubomirsky ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Son M. Phi ,  Shankar Venkataraman

IPC: H01L21/67 ,  H01L21/3065 ,  H01L21/683 ,  H01J37/32 ,  H01L21/687 ,  H01L21/311

CPC classification number: H01L21/67069 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/6831 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/31116 ,  H01L21/31138

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

公开(公告)号：US20210074539A1

公开(公告)日：2021-03-11

申请号：US16562002

申请日：2019-09-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Denis Ivanov ,  Lance Scudder ,  Dmitry Lubomirsky

IPC: H01L21/02 ,  H01J37/32

Abstract: Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.

公开(公告)号：US10468285B2

公开(公告)日：2019-11-05

申请号：US15642977

申请日：2017-07-06

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

IPC: H01L21/683 ,  H01L21/3065 ,  H01L21/67

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

公开(公告)号：US10453655B2

公开(公告)日：2019-10-22

申请号：US16213978

申请日：2018-12-07

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Soonam Park ,  Kartik Ramaswamy ,  Dmitry Lubomirsky

IPC: H01J37/32

Abstract: A plasma reactor for processing a workpiece has a microwave source with a digitally synthesized rotation frequency using direct digital up-conversion and a user interface for controlling the rotation frequency.

公开(公告)号：US20180226230A1

公开(公告)日：2018-08-09

申请号：US15424488

申请日：2017-02-03

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Nikolai Kalnin ,  Soonam Park ,  Toan Tran ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67

Abstract: A system includes a process chamber, a housing that defines a waveguide cavity, and a first conductive plate within the housing. The first conductive plate faces the process chamber. The system also includes one or more adjustment devices that can adjust at least a position of the first conductive plate, and a second conductive plate, coupled with the housing, between the waveguide cavity and the process chamber. Electromagnetic radiation can propagate from the waveguide cavity into the process chamber through apertures in the second conductive plate. The system also includes a dielectric plate that seals off the process chamber from the waveguide cavity, and one or more electronics sets that transmit the electromagnetic radiation into the waveguide cavity. A plasma forms when at least one process gas is within the chamber, and the electromagnetic radiation propagates into the process chamber from the waveguide cavity.

公开(公告)号：US20180073994A1

公开(公告)日：2018-03-15

申请号：US15817599

申请日：2017-11-20

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Yufei Zhu ,  Saurabh Garg ,  Soonam Park ,  Dmitry Lubomirsky

IPC: G01N22/00

CPC classification number: G01N22/00

Abstract: A test fixture includes an outer conductor and an inner conductor disposed within and electrically isolated from the outer conductor. The inner conductor includes a top portion having a first diameter, a bottom portion having a second diameter, and a third portion proximate the bottom portion that has a third diameter that is less than the second diameter and is greater than the first diameter. An electrical property of a chamber component disposed within the outer conductor is measurable based on application of a signal to at least one of the outer conductor or the inner conductor.

公开(公告)号：US20160189933A1

公开(公告)日：2016-06-30

申请号：US15063849

申请日：2016-03-08

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32229 ,  H01J7/24 ,  H01J19/80 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299 ,  H05B41/16

Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

公开(公告)号：US08970226B2

公开(公告)日：2015-03-03

申请号：US13944026

申请日：2013-07-17

Applicant: Applied Materials, Inc.

Inventor： Hiroji Hanawa ,  Satoru Kobayashi ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: G01R27/26 ,  G01R25/02 ,  G01R15/18 ,  G01R27/32 ,  G01R19/00 ,  H05H1/00

CPC classification number: G01R27/32 ,  G01R19/0061 ,  H05H1/0081

Abstract: An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.

Abstract translation: RF电流探针被封装在导电壳体中以允许其放置在等离子体反应器室内。 RF电压探头适于具有长同轴电缆，以允许测量设备远离探头连接，而不会使电压测量失真。

公开(公告)号：US11908662B2

公开(公告)日：2024-02-20

申请号：US16663215

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Xiaopu Li ,  Kallol Bera ,  Edward P. Hammond, IV ,  Jonghoon Baek ,  Amit Kumar Bansal ,  Jun Ma ,  Satoru Kobayashi

IPC: H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  C23C16/505

CPC classification number: H01J37/32467 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32715 ,  H01J2237/24564 ,  H01J2237/3321

Abstract: Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.

公开(公告)号：US11195699B2

公开(公告)日：2021-12-07

申请号：US16459362

申请日：2019-07-01

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

Abstract: A rotating microwave is established for any resonant mode TEmnl or TMmnl of a cavity, where the user is free to choose the values of the mode indices m, n and l. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ΔØ and the azimuthal angle Δθ between two microwave input ports P and Q as functions of m, n and l. The slow rotation of frequency Ωa (typically 1-1000 Hz), is established by transforming dual field inputs α cos Ωat and ±α sin Ωat in the orthogonal input system into an oblique system defined by the angle Δθ between two microwave ports P and Q.