公开(公告)号：US20170203364A1

公开(公告)日：2017-07-20

申请号：US15326910

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Anantha K. Subramani ,  Kasiraman Krishnan ,  Jennifer Y. Sun ,  Srinivas D. Nemani ,  Thomas B. Brezoczky ,  Christopher A. Rowland ,  Simon Yavelberg ,  Swaminathan Srinivasan ,  Nag B. Patibandla ,  Ellie Y. Yieh ,  Hou T. Ng

IPC: B22F3/105 ,  B33Y30/00 ,  B33Y50/02 ,  B28B1/00 ,  B23K26/70 ,  B23K10/02 ,  B23K10/00 ,  B23K26/342 ,  B23K26/00 ,  B33Y10/00 ,  B22F1/00

CPC classification number: B22F3/1055 ,  B22F1/0003 ,  B22F2003/1051 ,  B22F2003/1057 ,  B22F2202/13 ,  B22F2301/205 ,  B22F2998/10 ,  B23K10/006 ,  B23K10/027 ,  B23K26/0006 ,  B23K26/342 ,  B23K26/702 ,  B23K2103/14 ,  B28B1/001 ,  B29C64/153 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  G05B2219/49007

Abstract: An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material over the platen, a laser configured to produce a laser beam, a controller configured to direct the laser beam to locations specified by data stored in a computer-readable medium to cause the feed material to fuse, and a plasma source configured to produce ions that are directed to substantially the same location on the platen as the laser beam.

公开(公告)号：US11978635B2

公开(公告)日：2024-05-07

申请号：US17197871

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Swaminathan Srinivasan ,  Abhijit Basu Mallick ,  Nicolas Breil

IPC: H01L21/285 ,  C23C14/04 ,  C23C16/04 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/768 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/28562 ,  C23C14/042 ,  C23C16/042 ,  H01L21/02208 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/3105 ,  H01L21/76864 ,  H01L21/76889 ,  H01L29/66795 ,  H01L29/7851

Abstract: Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

公开(公告)号：US11705335B2

公开(公告)日：2023-07-18

申请号：US17724994

申请日：2022-04-20

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Abhijit Basu Mallick ,  Swaminathan Srinivasan ,  Rui Cheng ,  Susmit Singha Roy ,  Gaurav Thareja ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC: H01L21/225 ,  H01L21/30 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/2257 ,  H01L21/02043 ,  H01L21/02164 ,  H01L21/30 ,  H01L21/67167

Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

公开(公告)号：US11446740B2

公开(公告)日：2022-09-20

申请号：US15941812

申请日：2018-03-30

Applicant: Applied Materials, Inc.

Inventor： Christopher A. Rowland ,  Anantha K. Subramani ,  Kasiraman Krishnan ,  Kartik Ramaswamy ,  Thomas B. Brezoczky ,  Swaminathan Srinivasan ,  Jennifer Y. Sun ,  Simon Yavelberg ,  Srinivas D. Nemani ,  Nag B. Patibandla ,  Hou T. Ng

IPC: B22F10/30 ,  B33Y30/00 ,  B33Y10/00 ,  B29C64/153 ,  B22F12/00 ,  B33Y50/02 ,  B23K10/00 ,  B23K10/02 ,  B28B1/00 ,  B22F10/10 ,  B22F12/55 ,  B22F12/63 ,  B22F12/41 ,  B22F3/105 ,  H05B3/00

Abstract: An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. The first dispenser delivers a first powder in a first linear region that extends along a first axis, and the second dispenser delivers a second powder in a second linear region that extends parallel to the first linear region and is offset from the first linear region along a second axis perpendicular to the first axis. The drive system a drive system moves the support with the first dispenser and second dispenser together along the second axis.

公开(公告)号：US20210202256A1

公开(公告)日：2021-07-01

申请号：US17197871

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Swaminathan Srinivasan ,  Abhijit Basu Mallick ,  Nicolas Breil

IPC: H01L21/285 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/28 ,  C23C16/04 ,  C23C14/04

Abstract: Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

公开(公告)号：US10607841B2

公开(公告)日：2020-03-31

申请号：US16220816

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Swaminathan Srinivasan ,  Abhijit Basu Mallick ,  Nicolas Breil

IPC: H01L21/285 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/28 ,  C23C16/04 ,  C23C14/04

Abstract: Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

公开(公告)号：US20190385851A1

公开(公告)日：2019-12-19

申请号：US16444856

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： SRINIVAS GANDIKOTA ,  Abhijit Basu Mallick ,  Swaminathan Srinivasan ,  Rui Cheng ,  Susmit Singha Roy ,  Gaurav Thareja ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC: H01L21/225 ,  H01L21/30 ,  H01L21/02 ,  H01L21/67

Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

公开(公告)号：US20180221948A1

公开(公告)日：2018-08-09

申请号：US15941812

申请日：2018-03-30

Applicant: Applied Materials, Inc.

Inventor： Christopher A. Rowland ,  Anantha K. Subramani ,  Kasiraman Krishnan ,  Kartik Ramaswamy ,  Thomas B. Brezoczky ,  Swaminathan Srinivasan ,  Jennifer Y. Sun ,  Simon Yavelberg ,  Srinivas D. Nemani ,  Nag B. Patibandla ,  Hou T. Ng

IPC: B22F3/00 ,  B28B1/00 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  B23K10/00 ,  H05B3/00

CPC classification number: B22F3/008 ,  B22F2003/1051 ,  B22F2003/1057 ,  B22F2998/10 ,  B23K10/006 ,  B23K10/027 ,  B28B1/001 ,  B29C64/153 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  H05B3/0061

Abstract: An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. The first dispenser delivers a first powder in a first linear region that extends along a first axis, and the second dispenser delivers a second powder in a second linear region that extends parallel to the first linear region and is offset from the first linear region along a second axis perpendicular to the first axis. The drive system a drive system moves the support with the first dispenser and second dispenser together along the second axis.

公开(公告)号：US20180065178A1

公开(公告)日：2018-03-08

申请号：US15728443

申请日：2017-10-09

Applicant: Applied Materials, Inc.

Inventor： Christopher A. Rowland ,  Anantha K. Subramani ,  Kasiraman Krishnan ,  Kartik Ramaswamy ,  Thomas B. Brezoczky ,  Swaminathan Srinivasan ,  Jennifer Y. Sun ,  Simon Yavelberg ,  Srinivas D. Nemani ,  Nag B. Patibandla ,  Hou T. Ng

IPC: B22F3/00 ,  B23K10/02 ,  B23K10/00 ,  H05B3/00 ,  B28B1/00 ,  B22F3/105

CPC classification number: B22F3/008 ,  B22F2003/1051 ,  B22F2003/1057 ,  B22F2998/10 ,  B23K10/006 ,  B23K10/027 ,  B28B1/001 ,  B29C64/153 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  H05B3/0061

Abstract: An additive manufacturing system that includes a platen, a feed material delivery system configured to deliver feed material to a location on the platen specified by a computer aided design program and a heat source configured to raise a temperature of the feed material simultaneously across all of the layer or across a region that extends across a width of the platen and scans the region across a length of the platen. The heat source can be an array of heat lamps, or a plasma source.

公开(公告)号：US11328928B2

公开(公告)日：2022-05-10

申请号：US16444856

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Abhijit Basu Mallick ,  Swaminathan Srinivasan ,  Rui Cheng ,  Susmit Singha Roy ,  Gaurav Thareja ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC: H01L21/225 ,  H01L21/30 ,  H01L21/02 ,  H01L21/67

Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.