公开(公告)号：US20210111222A1

公开(公告)日：2021-04-15

申请号：US16653762

申请日：2019-10-15

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-hua Li ,  Toshihiko Miyashita ,  Ellie Yieh ,  Srinivas D. Nemani ,  Seshadri Ramaswami ,  Nikolaos Bekiaris

IPC: H01L27/146

Abstract: Embodiments disclosed herein include CMOS image sensors and methods of forming such devices. In an embodiment, a method of forming a CMOS image sensor comprises pressurizing a chamber with a gas comprising hydrogen, and annealing a substrate in the pressurized chamber. In an embodiment the substrate comprises the CMOS image sensor. In an embodiment, the CMOS image sensor comprises a semiconductor body and a trench around a perimeter the semiconductor body, wherein the trench is filled with a high-k oxide that directly contacts the semiconductor body. In an embodiment, the method further comprises, depressurizing the chamber.