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公开(公告)号：US11315787B2
公开(公告)日：2022-04-26
申请号：US16821759
申请日：2020-03-17
Applicant: Applied Materials, Inc.
Inventor： Tzu-shun Yang , Rui Cheng , Karthik Janakiraman , Zubin Huang , Diwakar Kedlaya , Meenakshi Gupta , Srinivas Guggilla , Yung-chen Lin , Hidetaka Oshio , Chao Li , Gene Lee
IPC: H01L21/033 , H01L21/311 , H01L21/3213
Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.
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公开(公告)号：US11527408B2
公开(公告)日：2022-12-13
申请号：US16867095
申请日：2020-05-05
Applicant: Applied Materials, Inc.
Inventor： Tzu-shun Yang , Rui Cheng , Karthik Janakiraman , Zubin Huang , Diwakar Kedlaya , Meenakshi Gupta , Srinivas Guggilla , Yung-chen Lin , Hidetaka Oshio , Chao Li , Gene Lee
IPC: H01L21/033 , H01L21/311 , H01L21/3213
Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.
