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公开(公告)号：US20040014320A1
公开(公告)日：2004-01-22
申请号：US10447255
申请日：2003-05-27
Applicant: Applied Materials, Inc.
Inventor： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC: B01J010/00 , B01J010/02 , B01J012/00 , B01J012/02 , B01J014/00 , B01J015/00 , B01J016/00 , B01J019/00 , B32B027/04 , B32B027/12 , H01L021/302 , H01L021/461 , B32B005/02
CPC classification number: C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
Abstract: A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.
Abstract translation: 用于填充衬底中的特征的前体和方法。 该方法通常包括沉积阻挡层，阻挡层由具有小于约5ppm氯的五（二甲基氨基）钽形成。 该方法另外可以包括在阻挡层上沉积种子层并在种子层上沉积导电层。 前体通常包括具有小于约5ppm氯的五（二甲基氨基）钽。 在具有周围加热元件的罐中产生前体，该加热元件被配置为减少杂质的形成。
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公开(公告)号：US20040018304A1
公开(公告)日：2004-01-29
申请号：US10193574
申请日：2002-07-10
Applicant: Applied Materials, Inc.
Inventor： Hua Chung , Ling Chen , Vincent W. Ku
IPC: H05H001/24 , C23C016/06 , C23C016/00 , H01L021/44 , C23C016/22 , C23C016/34
CPC classification number: C23C16/45525 , C23C16/34 , C23C16/4488 , C23C16/452
Abstract: A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.
Abstract translation: 提供了一种在基板上沉积膜的方法。 在一个方面，所述方法包括向活化区提供含金属的前体，以及活化含金属的前体以形成活化的前体。 活化的前体气体被输送到反应室，并且使用循环沉积方法将膜沉积在基板上，其中活化的前体气体和还原气体交替地吸附在基板上。 还提供了使用活化的还原气体将膜沉积在基板上的方法。
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公开(公告)号：US20030019428A1
公开(公告)日：2003-01-30
申请号：US10134206
申请日：2002-04-26
Applicant: APPLIED MATERIALS, INC.
Inventor： Vincent W. Ku , Anzhong Chang , Anh N. Nguyen , Ming Xi , Xiaoxiong Yuan , Juan B. Tuscano JR. , Lawrence C. Lei , Seshadri Ganguli , Michael Yang , Chen-An Chen , Ling Chen
IPC: C23C016/00 , C23F001/00 , H01L021/306
CPC classification number: C23C16/45565 , C23C16/455 , C23C16/45512
Abstract: A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.
Abstract translation: 处理室适于在基板上执行沉积处理。 腔室包括适于在沉积期间保持基底的基座和安装在基座上方的气体混合和分配组件。 气体混合分配组件包括面板，安装在面板上方的分散板和安装在分散板上方的混合夹具。 面板适于向基座呈现发射率不变构型。 混合夹具包括处理气体流过的混合室和围绕混合室的外室。 处理室还包括外壳和安装在外壳内并围绕基座的衬垫。 衬套限定了衬套和外壳之间的间隙。 该间隙具有邻近排气口的最小宽度和在与排气口径向相反的点处的最大宽度。
