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    Method and Apparatus for Determining an Overlay Error
    1.
    发明申请
    Method and Apparatus for Determining an Overlay Error 有权
    确定叠加误差的方法和装置

    公开(公告)号：US20120013881A1

    公开(公告)日：2012-01-19

    申请号：US13181932

    申请日：2011-07-13

    申请人： Arie Jeffrey Den Boef ,  Maurits VAN DER SCHAAR ,  Andreas Fuchs ,  Martyn John Coogans ,  Kaustuve Bhattacharyya ,  Stephen Peter Morgan ,  Michael Kubis

    发明人： Arie Jeffrey Den Boef ,  Maurits VAN DER SCHAAR ,  Andreas Fuchs ,  Martyn John Coogans ,  Kaustuve Bhattacharyya ,  Stephen Peter Morgan ,  Michael Kubis

    IPC分类号： G03B27/54 ,  G06F19/00 ,  G01N21/47

    CPC分类号： A01H1/06 ,  A01G22/00 ,  C12N15/8201 ,  G03B27/52 ,  G03B27/53 ,  G03F7/705 ,  G03F7/70633

    摘要： A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p(n′), p(n″) and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

    摘要翻译： 确定重叠错误的方法。 测量具有过程引起的不对称性的覆盖目标。 构建目标模型。 修改模型，例如通过移动结构之一来补偿不对称性。 使用修改的模型计算不对称引起的覆盖误差。 通过从测量的重叠错误中减去不对称引起的覆盖误差来确定生产目标中的重叠错误。 在一个示例中，通过改变不对称p（n'），p（n“）来修改模型，并且针对多个散射仪测量配方重复计算不对称引起的重叠误差，并且确定在 生产目标使用计算的不对称引起的重叠误差来选择用于测量生产目标的最佳散射仪测量配方。

    Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells
    5.
    发明申请
    Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells 有权
    方法和散射仪，平版印刷系统和平版印刷加工单元

    公开(公告)号：US20110027704A1

    公开(公告)日：2011-02-03

    申请号：US12846652

    申请日：2010-07-29

    申请人： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Hendrik Jan Hidde Smilde ,  Andrianus Johannes Hendrikus Schellekens ,  Michael Kubis

    发明人： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Hendrik Jan Hidde Smilde ,  Andrianus Johannes Hendrikus Schellekens ,  Michael Kubis

    IPC分类号： G03F7/20 ,  G03B27/54 ,  G06K9/00

    CPC分类号： G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

    摘要： In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is foamed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

    摘要翻译： 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 周期性结构的第二图像被发泡并被检测，同时用第二辐射束照射结构。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

    Methods and scatterometers, lithographic systems, and lithographic processing cells
    6.
    发明授权
    Methods and scatterometers, lithographic systems, and lithographic processing cells 有权
    方法和散射仪，光刻系统和光刻处理单元

    公开(公告)号：US09081303B2

    公开(公告)日：2015-07-14

    申请号：US12846652

    申请日：2010-07-29

    申请人： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Hendrik Jan Hidde Smilde ,  Adrianus Johannes Hendrikus Schellekens ,  Michael Kubis

    发明人： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Hendrik Jan Hidde Smilde ,  Adrianus Johannes Hendrikus Schellekens ,  Michael Kubis

    IPC分类号： G03F7/20 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01B11/02 ,  G01B11/22 ,  G01N21/88

    CPC分类号： G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

    摘要： In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

    摘要翻译： 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

    Method for projection of a circuit pattern, which is arranged on a mask, onto a semiconductor wafer
    7.
    发明申请
    Method for projection of a circuit pattern, which is arranged on a mask, onto a semiconductor wafer 有权
    将布置在掩模上的电路图案投影到半导体晶片上的方法

    公开(公告)号：US20050050512A1

    公开(公告)日：2005-03-03

    申请号：US10917426

    申请日：2004-08-13

    申请人： Bernd Kochan ,  Juergen Karl ,  Michael Kubis ,  Norbert Haase

    发明人： Bernd Kochan ,  Juergen Karl ,  Michael Kubis ,  Norbert Haase

    IPC分类号： G03F7/20 ,  G06T7/00 ,  G06F17/50 ,  G03C5/00 ,  G03F9/00 ,  G06G7/62 ,  G06K9/00 ,  G21K5/10 ,  H01J37/08 ,  H01Q9/28

    CPC分类号： G03F7/70991 ,  G03F7/705 ,  G03F7/70616 ,  G06T7/0004 ,  G06T2207/30148

    摘要： A simulation is carried out of a projection based on an electronically stored circuit pattern and adjustable projection parameters and optical parameters which characterize the specific characteristics of a projection apparatus. Positions at which it is predicted that side lobes will occur in the event of an actual projection are identified in the calculated circuit pattern. The positions of the side lobes are transmitted to a manufacturing unit and are recorded in a measurement program. A wafer, which has been exposed by a mask, is inspected for side lobes, at least at precisely those transmitted positions using the measurement program. The adjustable projection parameters are adapted, a radiation-sensitive layer is removed from and reapplied to the wafer and the projection is repeated with the adapted projection parameters depending on the detection result. The control process is repeated until the side lobes have been completely prevented.

    摘要翻译： 基于电子存储的电路图案和表征投影设备的特定特性的可调投影参数和光学参数的投影进行模拟。 在计算出的电路图案中，可以预测在实际投影的情况下发生旁瓣的位置。 旁瓣的位置被传送到制造单元并记录在测量程序中。 已经通过掩模曝光的晶片至少在使用测量程序的那些传输位置处被检查为旁瓣。 可调节的投影参数被适配，辐射敏感层被去除并重新应用于晶片，并且根据检测结果，利用适配的投影参数重复投影。 重复控制过程，直到旁瓣完全被防止。

    Compensation of Process-Induced Displacement
    9.
    发明申请
    Compensation of Process-Induced Displacement 审中-公开
    过程引起的位移补偿

    公开(公告)号：US20100040983A1

    公开(公告)日：2010-02-18

    申请号：US12191492

    申请日：2008-08-14

    申请人： Heinrich Ollendorf ,  Thomas Zell ,  Michael Kubis ,  Steffen Schmidt ,  Elke Hietschold

    发明人： Heinrich Ollendorf ,  Thomas Zell ,  Michael Kubis ,  Steffen Schmidt ,  Elke Hietschold

    IPC分类号： G03F7/20

    CPC分类号： G03F1/72

    摘要： A method of manufacturing integrated circuits includes determining a process-induced displacement (e.g., a stress-induced displacement) between primary structures on a substrate and providing a photomask with mask features assigned to the primary structures. The distances between the mask features are set such that the process-induced displacement is compensated.

    摘要翻译： 制造集成电路的方法包括确定衬底上的主要结构之间的过程引起的位移（例如，应力引起的位移），并提供具有分配给主要结构的掩模特征的光掩模。 掩模特征之间的距离被设置为使得处理引起的位移被补偿。

    Metrology method and inspection apparatus, lithographic system and device manufacturing method
    10.
    发明授权
    Metrology method and inspection apparatus, lithographic system and device manufacturing method 有权
    计量方法和检验仪器，光刻系统和器件制造方法

    公开(公告)号：US09140998B2

    公开(公告)日：2015-09-22

    申请号：US13294057

    申请日：2011-11-10

    申请人： Hendrik Jan Hidde Smilde ,  Arno Jan Bleeker ,  Patrick Warnaar ,  Willem Marie Julia Marcel Coene ,  Michael Kubis

    发明人： Hendrik Jan Hidde Smilde ,  Arno Jan Bleeker ,  Patrick Warnaar ,  Willem Marie Julia Marcel Coene ,  Michael Kubis

    IPC分类号： G06F17/00 ,  G06F15/18 ,  G01N21/55 ,  G03F7/20

    CPC分类号： G03F7/70633 ,  G03F7/70483 ,  G03F7/70625 ,  G03F7/70641 ,  G06N99/005

    摘要： Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.

    摘要翻译： 公开了用于测量由基板上的光刻工艺形成的目标结构的方法。 目标内的光栅结构小于测量光学系统的照明点和视场。 光学系统具有通向光瞳平面成像传感器的第一分支和通向基板平面成像传感器的第二分支。 空间光调制器被布置在光学系统的第二分支的中间光瞳平面中。 SLM赋予可编程的衰减模式，其可用于校正第一和第二照明模式或成像之间的不对称性。 通过使用特定的目标设计和机器学习过程，衰减模式也可以被编程为充当滤波器功能，增强对诸如焦点的特定参数的敏感性。