利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.042 秒)

    Method for CVD process control for enhancing device performance
    3.
    发明授权
    Method for CVD process control for enhancing device performance 有权
    CVD过程控制方法，用于提高设备性能

    公开(公告)号：US06342453B1

    公开(公告)日：2002-01-29

    申请号：US09454423

    申请日：1999-12-03

    申请人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

    发明人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

    IPC分类号： H01L2131

    CPC分类号： C23C16/45523 ,  C23C16/455 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/66242

    摘要： A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species according to a determined concentration profile of a film introduced on a substrate, and introducing a film on a substrate, the film comprising the species at a first concentration at a first point in the film and a second concentration different than the first concentration at a second point in the film. Also, a bipolar transistor including a collector layer of a first conductivity type, a base layer of a second conductivity type forming a first junction with the collector layer, and an emitter layer of the first conductivity type forming a second junction with the base layer. An electrode configured to direct carriers through the emitter layer to the base layer and into the collector layer is also included. In one embodiment, at least one of the first junction and the second junction is between different semiconductor materials to form at least one heterojunction. The heterojunction has a concentration profile of a semiconductor material such that an electric field changes in an opposite way to that of a mobility change.

    摘要翻译： 根据确定的包含引入到基底上的物质的膜的浓度分布来控制物种的引入的方法和系统。 在一个方面，该方法包括根据确定的引入到基底上的膜的浓度分布来控制物种的流速，以及在基底上引入膜，所述膜在第一点处以第一浓度 并且在膜的第二点处具有与第一浓度不同的第二浓度。 此外，包括第一导电类型的集电极层，形成与集电极层的第一结的第二导电类型的基极层以及与基极层形成第二结的第一导电类型的发射极层的双极晶体管。 还包括被配置为将载流子引导通过发射极层到基极层并进入集电极层的电极。 在一个实施例中，第一结和第二结中的至少一个位于不同的半导体材料之间以形成至少一个异质结。 异质结具有半导体材料的浓度分布，使得电场以与迁移率变化相反的方式改变。

    Process and apparatus for cleaning a silicon surface
    5.
    发明授权
    Process and apparatus for cleaning a silicon surface 失效

    公开(公告)号：US06494959B1

    公开(公告)日：2002-12-17

    申请号：US09493694

    申请日：2000-01-28

    申请人： Arkadii V. Samoilov ,  Dale R. DuBois ,  Bradley M. Curelop ,  David R. Carlson ,  Paul B. Comita

    发明人： Arkadii V. Samoilov ,  Dale R. DuBois ,  Bradley M. Curelop ,  David R. Carlson ,  Paul B. Comita

    IPC分类号： C23G100

    CPC分类号： H01L21/02046 ,  Y10S438/906

    摘要： A low pressure-high hydrogen flow rate process of cleaning a silicon wafer surface is described. The combination of process pressures below about 1 Torr with hydrogen flow rates up to about 3 SLM has been found to remove substantially all oxygen contamination from the silicon wafer surface at process temperatures less than about 800° C. without the use of a reactive gas. After processing at such process pressures and flow rates, even lower levels of oxygen contamination may be achieved by then increasing the process pressure, the hydrogen flow rate, and the process temperature, though the process temperature still remains less than 800° C. The combination of low pressure and high hydrogen flow rate can be achieved using a vacuum pumping speed of at least 30 cubic meters per hour. The present invention also describes an apparatus for cleaning a silicon wafer surface in which the processes of the present invention and other processes can be practiced.

    Light sensor having a transparent substrate, a contiguous IR suppression filter and through-substrate vias
    7.
    发明授权
    Light sensor having a transparent substrate, a contiguous IR suppression filter and through-substrate vias 有权
    光传感器具有透明基板，连续IR抑制滤光器和贯通基板通孔

    公开(公告)号：US08791404B2

    公开(公告)日：2014-07-29

    申请号：US13337864

    申请日：2011-12-27

    申请人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

    发明人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

    IPC分类号： G01J3/50

    CPC分类号： H01L27/14621 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02165 ,  H01L31/02327 ,  H01L31/18 ,  H01L2224/13

    摘要： Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate and configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a glass substrate. The light sensor also includes a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. The light sensor further includes through-silicon vias to provide electrical interconnections between different conductive layers.

    摘要翻译： 描述了技术来提供在玻璃基板上形成到光传感器的IR抑制滤光器。 在一个或多个实施方式中，光传感器包括具有表面的基板。 在衬底中形成一个或多个光电检测器，并配置成检测光并响应于此提供信号。 构造成阻挡红外光到达表面的IR抑制滤光器形成在玻璃基板上。 光传感器还包括布置在表面上的多个彩色滤光片。 彩色通过滤光器被配置为过滤可见光以将有限的波长光中的光传递到一个或多个光电检测器。 缓冲层设置在表面上并且被配置为封装多个彩色通过滤光片和粘附层。 光传感器还包括穿硅通孔，以提供不同导电层之间的电互连。

    Etchant treatment processes for substrate surfaces and chamber surfaces
    8.
    发明授权
    Etchant treatment processes for substrate surfaces and chamber surfaces 有权
    底物表面和室表面的蚀刻处理工艺

    公开(公告)号：US08445389B2

    公开(公告)日：2013-05-21

    申请号：US13346503

    申请日：2012-01-09

    申请人： Ali Zojaji ,  Arkadii V. Samoilov

    发明人： Ali Zojaji ,  Arkadii V. Samoilov

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/02019 ,  B08B7/0035 ,  H01L21/02046 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/3065 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814

    摘要： Embodiments of the invention generally relate to methods for treating a silicon-containing material on a substrate surface and performing a chamber clean process. In one embodiment, a method includes positioning a substrate containing a silicon material having a contaminant thereon within a process chamber and exposing the substrate to an etching gas containing chlorine gas and a silicon source gas while removing the contaminant and maintaining a temperature of the substrate within a range from about 500° C. to less than about 800° C. during an etching process. The method further includes exposing the substrate to a deposition gas after the etching process during a deposition process and exposing the process chamber to a chamber clean gas containing chlorine gas and the silicon source gas after the deposition process during a chamber clean process. The chamber clean process limits the etching of quartz and metal surfaces within the process chamber.

    摘要翻译： 本发明的实施方案一般涉及在基材表面处理含硅材料并进行室清洁工艺的方法。 在一个实施例中，一种方法包括将含有其上具有污染物的硅材料的衬底定位在处理室内，并将衬底暴露于含有氯气和硅源气体的蚀刻气体，同时除去污染物并保持衬底的温度 在蚀刻过程中约500℃至小于约800℃的范围。 该方法还包括在沉积工艺期间在蚀刻工艺之后将衬底暴露于沉积气体，并且在室清洁过程中在沉积过程之后将处理室暴露于含有氯气的室清洁气体和沉积工艺之后的硅源气体。 室清洁过程限制了处理室内的石英和金属表面的蚀刻。