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公开(公告)号：US06455814B1
公开(公告)日：2002-09-24
申请号：US10007852
申请日：2001-11-07
申请人： Arkadii V. Samoilov , Dale R. DuBois , Lance A. Scudder , Paul B. Comita , Lori D. Washington , David K. Carlson , Roger N. Anderson
发明人： Arkadii V. Samoilov , Dale R. DuBois , Lance A. Scudder , Paul B. Comita , Lori D. Washington , David K. Carlson , Roger N. Anderson
IPC分类号： F27B514
CPC分类号： H01L21/67115 , C23C16/481 , C30B25/105
摘要： An apparatus that includes a reflector having a mirrored surface facing down, a glass structure located beneath the reflector, a susceptor within the glass structure having a surface facing up that is capable of holding a part to be processed, and one or more radiant heat sources directed at and located beneath the glass structure.
摘要翻译： 一种装置，包括具有面向下的镜面的反射器，位于反射器下方的玻璃结构，玻璃结构内的基座具有面向上的表面，其能够保持待加工的部分，以及一个或多个辐射热源 指向并位于玻璃结构下方。
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公开(公告)号：US06494959B1
公开(公告)日：2002-12-17
申请号：US09493694
申请日：2000-01-28
IPC分类号： C23G100
CPC分类号： H01L21/02046 , Y10S438/906
摘要： A low pressure-high hydrogen flow rate process of cleaning a silicon wafer surface is described. The combination of process pressures below about 1 Torr with hydrogen flow rates up to about 3 SLM has been found to remove substantially all oxygen contamination from the silicon wafer surface at process temperatures less than about 800° C. without the use of a reactive gas. After processing at such process pressures and flow rates, even lower levels of oxygen contamination may be achieved by then increasing the process pressure, the hydrogen flow rate, and the process temperature, though the process temperature still remains less than 800° C. The combination of low pressure and high hydrogen flow rate can be achieved using a vacuum pumping speed of at least 30 cubic meters per hour. The present invention also describes an apparatus for cleaning a silicon wafer surface in which the processes of the present invention and other processes can be practiced.
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公开(公告)号：US06368567B2
公开(公告)日：2002-04-09
申请号：US09167269
申请日：1998-10-07
IPC分类号： C01B700
CPC分类号： C23C16/4412
摘要： A method and an apparatus is provided for removing wafer processing by-products from gas fluid exhaust systems utilizing an energy source placed within an exhaust channel either alone or in combination with a cleaning gas. The placement of the energy source in an exhaust channel enables emitted energy to react with wafer processing by-products to convert the by-product residues to more removable forms. Additionally provided is a cleaning gas source internal to the exhaust channel to further react with and convert exiting by-product residues to gaseous fluids.
摘要翻译： 提供了一种方法和装置，用于单独或与清洁气体组合地利用放置在排气通道内的能量源从气体流体排放系统中除去晶片加工副产物。 能量源在排气通道中的放置使得能够发射的能量与晶片加工副产物反应，以将副产物残余物转化为更可移除的形式。 另外提供了排气通道内部的清洁气体源，以进一步与离子副产物残留物反应并转化成气体流体。
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4.发明申请SYSTEMS FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION AND BEVEL EDGE ETCHING 审中-公开等离子体增强化学气相沉积和水平蚀刻系统公开(公告)号：US20120211164A1
公开(公告)日：2012-08-23
申请号：US13456080
申请日：2012-04-25
申请人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
发明人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
IPC分类号： H01L21/3065 , C23C16/458 , C23C16/50 , H01L21/306
CPC分类号： H01L21/6719 , H01J37/32366 , H01J2237/3321 , H01L21/67201 , H01L21/67207
摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.
摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。
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公开(公告)号：US4641604A
公开(公告)日：1987-02-10
申请号：US804954
申请日：1985-12-05
申请人： Arthur J. Learn , Dale R. DuBois
发明人： Arthur J. Learn , Dale R. DuBois
IPC分类号： C23C16/44 , C23C16/455 , B05C13/02
CPC分类号： C23C16/45559 , C23C16/455 , C23C16/45591
摘要： A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.
摘要翻译： 用于以垂直于船的轴线的均匀间隔的垂直取向支撑多个晶片的化学气相沉积晶片舟皿包括具有封闭端并由相互接合的上下半筒组成的圆柱体。 上半圆柱体具有扩散区，其中在其中的气流通道在其内部，并且从垂直平面通过气缸轴线的0至75°和0至15度内的区域。 剩余的双缸壁和端部是没有气体流动通道的挡板区域。 下半圆柱体的端部和侧壁包括气体扩散区域。 气体流动通道占相应气体扩散区域的表面积的0.5％至80％。
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公开(公告)号：US08444926B2
公开(公告)日：2013-05-21
申请号：US11668947
申请日：2007-01-30
CPC分类号： C23C16/46
摘要： A heater liner assembly suitable for covering the interior of a plasma processing chamber is provided. In some embodiments, a liner assembly for a processing chamber can include a heating element embedded in a body. A flange extending outward from an outer diameter of the body includes an upper surface having a sealing surface and at least one pad that extends from the upper surface of the flange to an elevation beyond the sealing surface. The pad contributes to control of the temperature of the liner assembly by maintaining the liner assembly spaced apart from the processing chamber.
摘要翻译： 提供一种适用于覆盖等离子体处理室内部的加热器衬套组件。 在一些实施例中，用于处理室的衬套组件可以包括嵌入在主体中的加热元件。 从主体的外径向外延伸的凸缘包括具有密封表面的上表面和从凸缘的上表面延伸到超过密封表面的高度的至少一个垫。 衬垫有助于通过保持衬套组件与处理室间隔开来控制衬套组件的温度。
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公开(公告)号：US4582020A
公开(公告)日：1986-04-15
申请号：US607065
申请日：1984-05-04
申请人： Arthur J. Learn , Dale R. DuBois
发明人： Arthur J. Learn , Dale R. DuBois
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01L21/205 , B05C13/02
CPC分类号： C23C16/45559 , C23C16/455 , C23C16/45591
摘要： A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.
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公开(公告)号：US4524719A
公开(公告)日：1985-06-25
申请号：US529415
申请日：1983-09-06
CPC分类号： C23C16/54 , C23C16/481 , Y10S414/141
摘要： A controlled temperature deposition device comprising an inner reaction chamber having gas distribution means for introducing gas into inner chamber and removing gas therefrom and a vacuum chamber means surrounding the inner deposition chamber and spaced from the walls thereof for maintaining a medium vacuum therein. Associated with the deposition device is a substrate loading and unloading fork which transfers substrates such as wafer boats from outside the device to a position in the inner deposition chamber and removes them from the inner deposition chamber following deposition.
摘要翻译： 一种控制温度沉积装置，包括具有气体分配装置的内部反应室，该气体分配装置用于将气体引入内部并从其中除去气体;以及真空室装置，围绕内部沉积室并与其间隔开并保持其中的真空。 与沉积装置相关联的是基板装载和卸载叉，其将诸如晶片舟皿的基板从装置的外部传送到内部沉积室中的位置，并且在沉积之后将其从内部沉积室中移出。
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公开(公告)号：US20120097330A1
公开(公告)日：2012-04-26
申请号：US12908617
申请日：2010-10-20
申请人： Prahallad Iyengar , Sanjeev Baluja , Dale R. DuBois , Juan Carlos Rocha-Alverez , Thomas Nowak , Scott A. Hendrickson , Yong-Won Lee , Mei-Yee Shek , Li-Qun Xia , Derek R. Witty
发明人： Prahallad Iyengar , Sanjeev Baluja , Dale R. DuBois , Juan Carlos Rocha-Alverez , Thomas Nowak , Scott A. Hendrickson , Yong-Won Lee , Mei-Yee Shek , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/465 , H01L21/46
CPC分类号： H01L21/02164 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/463 , C23C16/5096 , H01L21/02274
摘要： A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead.
摘要翻译： 衬底处理系统包括与处理室相邻的热处理器或等离子体发生器。 第一处理气体进入热处理器或等离子体发生器。 然后，第一处理气体直接通过喷头流入处理室。 第二处理气体流过穿过喷头的第二流路。 第一和第二处理气体混合在喷淋头下面，并且一层材料沉积在喷头下方的基底上。
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公开(公告)号：US06699530B2
公开(公告)日：2004-03-02
申请号：US08808246
申请日：1997-02-28
申请人： Michal Danek , Marvin Liao , Eric Englhardt , Mei Chang , Yeh-Jen Kao , Dale R. DuBois , Alan F. Morrison
发明人： Michal Danek , Marvin Liao , Eric Englhardt , Mei Chang , Yeh-Jen Kao , Dale R. DuBois , Alan F. Morrison
IPC分类号： B05D306
CPC分类号： C23C16/45565 , C23C16/34 , C23C16/4408 , C23C16/4581 , C23C16/4586 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01J2237/2001 , H01J2237/336 , H01L21/28512 , H01L21/28556 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76864
摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.
摘要翻译： 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积一层材料。 接下来，将材料层退火。 一旦退火完成，材料可能被氧化。 或者，一旦退火完成，材料可能暴露于硅气体。 沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。 用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。 淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。
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