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    Method for CVD process control for enhancing device performance
    3.
    发明授权
    Method for CVD process control for enhancing device performance 有权
    CVD过程控制方法，用于提高设备性能

    公开(公告)号：US06342453B1

    公开(公告)日：2002-01-29

    申请号：US09454423

    申请日：1999-12-03

    申请人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

    发明人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

    IPC分类号： H01L2131

    CPC分类号： C23C16/45523 ,  C23C16/455 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/66242

    摘要： A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species according to a determined concentration profile of a film introduced on a substrate, and introducing a film on a substrate, the film comprising the species at a first concentration at a first point in the film and a second concentration different than the first concentration at a second point in the film. Also, a bipolar transistor including a collector layer of a first conductivity type, a base layer of a second conductivity type forming a first junction with the collector layer, and an emitter layer of the first conductivity type forming a second junction with the base layer. An electrode configured to direct carriers through the emitter layer to the base layer and into the collector layer is also included. In one embodiment, at least one of the first junction and the second junction is between different semiconductor materials to form at least one heterojunction. The heterojunction has a concentration profile of a semiconductor material such that an electric field changes in an opposite way to that of a mobility change.

    摘要翻译： 根据确定的包含引入到基底上的物质的膜的浓度分布来控制物种的引入的方法和系统。 在一个方面，该方法包括根据确定的引入到基底上的膜的浓度分布来控制物种的流速，以及在基底上引入膜，所述膜在第一点处以第一浓度 并且在膜的第二点处具有与第一浓度不同的第二浓度。 此外，包括第一导电类型的集电极层，形成与集电极层的第一结的第二导电类型的基极层以及与基极层形成第二结的第一导电类型的发射极层的双极晶体管。 还包括被配置为将载流子引导通过发射极层到基极层并进入集电极层的电极。 在一个实施例中，第一结和第二结中的至少一个位于不同的半导体材料之间以形成至少一个异质结。 异质结具有半导体材料的浓度分布，使得电场以与迁移率变化相反的方式改变。

    Silicon-containing layer deposition with silicon compounds
    5.
    发明授权
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US07540920B2

    公开(公告)日：2009-06-02

    申请号：US10688797

    申请日：2003-10-17

    申请人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    发明人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    IPC分类号： C30B21/02

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion of the silicon compound, the silicon motif, as the silicon-containing film. The ligands are another portion of the silicon compound and are liberated as an in-situ etchant. The in-situ etchants supports the growth of selective silicon epitaxy. Silicon compounds include SiRX6, Si2RX6, Si2RX8, wherein X is independently hydrogen or halogen and R is carbon, silicon or germanium. Silicon compound also include compounds comprising three silicon atoms, fourth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen, as well as, comprising four silicon atoms, fifth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen.

    摘要翻译： 本发明的实施方案通常提供硅化合物的组合物和使用硅化合物沉积含硅膜的方法。 该方法采用将硅化合物引入衬底表面，并将一部分硅化合物硅基体作为含硅膜沉积。 配体是硅化合物的另一部分，并且被释放为原位蚀刻剂。 原位蚀刻剂支持选择性硅外延的生长。 硅化合物包括SiRX6，Si2RX6，Si2RX8，其中X独立地是氢或卤素，R是碳，硅或锗。 硅化合物还包括包含三个硅原子，第四碳原子，硅或锗的氢原子或卤原子与至少一个卤素的化合物，以及包含四个硅原子，第五个碳原子，硅或锗的化合物和 氢或卤素与至少一个卤素。

    Silicon-containing layer deposition with silicon compounds
    6.
    发明授权
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US07758697B2

    公开(公告)日：2010-07-20

    申请号：US11969139

    申请日：2008-01-03

    申请人： Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    发明人： Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    IPC分类号： C30B21/02

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compounds having a formula selected from the group Si4X8, Si4X10, Si5X10, and Si5X12, where X is independently a hydrogen or halogen.

    摘要翻译： 描述了沉积含硅膜的方法。 所述方法可以包括将硅化合物递送到表面或基底，并使硅化合物反应生长含硅膜。 硅化合物可以是一种或多种具有选自Si 4 X 8，Si 4 X 10，Si 5 X 10和Si 5 X 12的式的化合物，其中X独立地是氢或卤素。

    Silicon-containing layer deposition with silicon compounds
    7.
    发明授权
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US07645339B2

    公开(公告)日：2010-01-12

    申请号：US11549033

    申请日：2006-10-12

    申请人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    发明人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    IPC分类号： C30B21/04

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.

    摘要翻译： 本发明的实施例涉及在衬底上沉积含硅材料的方法。 在一个实例中，提供了一种用于选择性和外延沉积含硅材料的方法，其包括在处理室内定位和加热含有结晶表面和非结晶表面的基底，将基底暴露于含有新戊硅烷的工艺气体中， 以及在所述晶体表面上沉积外延层。 在另一个实例中，提供了一种用于覆盖沉积含硅材料的方法，其包括定位和加热含有结晶表面的基底和处理室内的特征表面，并将基底暴露于含有新戊硅烷和碳源的工艺气体沉积 跨过结晶表面和特征表面的碳化硅毯层。 通常，碳化硅覆盖层包含选择性地沉积在晶体表面上的碳化硅外延层。

    Processing method for growing thick films
    8.
    发明授权
    Processing method for growing thick films 失效
    生长厚膜的加工方法

    公开(公告)号：US5298107A

    公开(公告)日：1994-03-29

    申请号：US843987

    申请日：1992-02-27

    申请人： Lance A. Scudder ,  Norma Riley ,  Jon M. Schalla

    发明人： Lance A. Scudder ,  Norma Riley ,  Jon M. Schalla

    IPC分类号： H01L21/205 ,  C23C16/458 ,  C30B25/12

    CPC分类号： C23C16/4588 ,  C30B25/12

    摘要： A technique for impeding the formation of mechanical bonds between workpieces, such as semiconductor wafers, and a carrier or susceptor on which they are supported during a deposition or layer formation process, such as in epitaxial processing. In the formation of relatively thick films, greater than approximately 50 microns (50 .mu.m) thick, wafers can become mechanically bonded to the susceptor on which they are supported, and are subject to damage caused by thermal stresses during a cooldown phase of processing. In the disclosed method, the speed or direction of rotation of a rotatable susceptor is abruptly changed at least once, or periodically during processing. Slight movement of the wafers with respect to the susceptor during each rotation speed change or reversal tends to break any bonds before they can develop strength, and production yields of acceptable wafers are significantly improved.

    摘要翻译： 阻止在诸如半导体晶片的工件之间形成机械结合的技术，以及在沉积或层形成过程（例如外延加工）期间它们被支撑在其上的载体或基座。 在形成相对较厚的膜时，大于约50微米（50（μm））厚的晶片可以机械地结合到它们所支撑的基座上，并且在冷却阶段期间受到热应力的损害 处理。 在所公开的方法中，旋转基座的转速或转动方向突然改变至少一次，或在处理期间周期性地改变。 在每个转速变化或反转期间，晶片相对于基座的轻微运动在它们可以发展强度之前倾向于破坏任何键，并且可接受的晶片的生产率显着提高。

    Wafer carrier
    9.
    发明授权
    Wafer carrier 失效
    晶圆载体

    公开(公告)号：US06544033B1

    公开(公告)日：2003-04-08

    申请号：US09658362

    申请日：2000-09-08

    申请人： Lance A. Scudder ,  Lori Washington ,  Lori A. Callaghan ,  Bradley M. Curelop

    发明人： Lance A. Scudder ,  Lori Washington ,  Lori A. Callaghan ,  Bradley M. Curelop

    IPC分类号： F27D1900

    CPC分类号： H01L21/68757 ,  H01L21/67346 ,  H01L21/67748

    摘要： Provided herein is a wafer carrier comprising a disk and a pocket, wherein the pocket is centered in the disk and holds a wafer. Also provided is a method of processing or testing a wafer for a semiconductor device, comprising the steps of placing the wafer in the wafer carrier disclosed herein; loading the wafer carrier in a loadlock chamber; and transferring the wafer carrier from the loadlock chamber to a process chamber for processing or testing.

    摘要翻译： 本文提供了包括盘和袋的晶片载体，其中所述袋在盘中居中并保持晶片。 还提供了一种用于半导体器件的晶片的处理或测试的方法，包括以下步骤：将晶片放置在本文公开的晶片载体中; 将所述晶片载体装载在负载锁定室中; 并将晶片载体从负载锁定室转移到用于处理或测试的处理室。