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1.
公开(公告)号:US20200013954A1
公开(公告)日:2020-01-09
申请号:US16572521
申请日:2019-09-16
申请人: Arm Limited
发明人: Lucian Shifren , Carlos Alberto Paz de Araujo , Jolanta Bozena Celinska , Christopher Randolph McWilliams
IPC分类号: H01L45/00
摘要: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.
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2.
公开(公告)号:US20190198758A1
公开(公告)日:2019-06-27
申请号:US16284932
申请日:2019-02-25
申请人: Arm Limited
发明人: Carlos Alberto Paz de Araujo , Jolanta Bozena Celinska , Christopher Randolph McWilliams , Lucian Shifren , Kimberly Gay Reid
IPC分类号: H01L45/00
CPC分类号: H01L45/1608 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/16 , H01L45/1633 , H01L45/1641 , H01L45/1658
摘要: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.
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