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    CHANGING AN ELECTRICAL RESISTANCE OF A RESISTOR
    1.
    发明申请
    CHANGING AN ELECTRICAL RESISTANCE OF A RESISTOR 失效
    改变电阻的电阻

    公开(公告)号：US20070229212A1

    公开(公告)日：2007-10-04

    申请号：US11758746

    申请日：2007-06-06

    申请人： Arne Ballantine ,  Cyril Cabral ,  Daniel Edelstein ,  Anthony Stamper

    发明人： Arne Ballantine ,  Cyril Cabral ,  Daniel Edelstein ,  Anthony Stamper

    IPC分类号： H01C10/00

    CPC分类号： H01L28/20 ,  H01C7/006 ,  H01C17/242 ,  Y10T29/49082 ,  Y10T29/49099 ,  Y10T29/49105

    摘要： An electrical structure. The electrical structure includes a resistor having a length L and an electrical resistance R(t) at a time t; and a laser radiation directed onto a portion of the resistor, wherein the portion of the resistor includes a fraction F of the length L, wherein the laser radiation heats the portion of the resistor such that the electrical resistance R(t) instantaneously changes at a rate dR/dt, and wherein the resistor is coupled to a semiconductor substrate.

    摘要翻译： 电气结构。 电气结构包括在时间t具有长度L和电阻R（t）的电阻器; 以及引导到电阻器的一部分的激光辐射，其中电阻器的该部分包括长度为L的分数F，其中激光辐射加热电阻器的部分，使得电阻R（t）瞬时变化 速率dR / dt，并且其中所述电阻器耦合到半导体衬底。

    INCREASING AN ELECTRICAL RESISTANCE OF A RESISTOR BY OXIDATION
    2.
    发明申请
    INCREASING AN ELECTRICAL RESISTANCE OF A RESISTOR BY OXIDATION 有权
    通过氧化增加电阻的电阻

    公开(公告)号：US20080102543A1

    公开(公告)日：2008-05-01

    申请号：US11968686

    申请日：2008-01-03

    申请人： Arne Ballantine ,  Daniel Edelstein ,  Anthony Stamper

    发明人： Arne Ballantine ,  Daniel Edelstein ,  Anthony Stamper

    IPC分类号： H01L21/66 ,  H01L21/31

    CPC分类号： C23C8/02 ,  C23C8/04 ,  C23C8/10 ,  C23C8/24 ,  C25D11/00 ,  C25D11/02 ,  C25D11/026 ,  H01C7/006 ,  H01C17/26 ,  H01L21/263 ,  H01L27/0802 ,  H01L29/8605 ,  Y10S257/904 ,  Y10S257/914

    摘要： A method for increasing an electrical resistance of a resistor that is within a semiconductor structure. A fraction of a surface layer of the resistor is oxidized with oxygen particles. In an embodiment, the fraction of the surface layer is heated by a beam of particles, such that the semiconductor structure is within a chamber that includes the oxygen particles as gaseous oxygen-comprising molecules. In an embodiment, the semiconductor structure is immersed in a chemical solution which includes the oxygen particles, wherein the oxygen particles includes oxygen-comprising liquid molecules, oxygen ions, or an oxygen-comprising gas dissolved in the chemical solution under pressurization. In an embodiment, the resistor is tested to determine whether the electrical resistance of the resistor after being oxidized with the oxygen particles is within a tolerance of a predetermined target resistance.

    摘要翻译： 一种用于增加在半导体结构内的电阻器的电阻的方法。 电阻的表面层的一部分被氧颗粒氧化。 在一个实施方案中，表面层的分数由颗粒束加热，使得半导体结构在包含作为气态含氧分子的氧颗粒的室内。 在一个实施方案中，将半导体结构浸入包括氧颗粒的化学溶液中，其中氧颗粒包括在加压下溶解在化学溶液中的含氧液体分子，氧离子或含氧气体。 在一个实施例中，测试电阻器以确定在用氧颗粒氧化后电阻器的电阻是否在预定目标电阻的容限内。

    INCREASING AN ELECTRICAL RESISTANCE OF A RESISTOR BY OXIDATION OR NITRIDIZATION
    3.
    发明申请
    INCREASING AN ELECTRICAL RESISTANCE OF A RESISTOR BY OXIDATION OR NITRIDIZATION 失效
    通过氧化或硝化提高电阻器的耐电性

    公开(公告)号：US20070267286A1

    公开(公告)日：2007-11-22

    申请号：US11836308

    申请日：2007-08-09

    申请人： Arne Ballantine ,  Daniel Edelstein ,  Anthony Stamper

    发明人： Arne Ballantine ,  Daniel Edelstein ,  Anthony Stamper

    IPC分类号： B01J19/12 ,  C25D5/02

    CPC分类号： C23C8/02 ,  C23C8/04 ,  C23C8/10 ,  C23C8/24 ,  C25D11/00 ,  C25D11/02 ,  C25D11/026 ,  H01C7/006 ,  H01C17/26 ,  H01L21/263 ,  H01L27/0802 ,  H01L29/8605 ,  Y10S257/904 ,  Y10S257/914

    摘要： A method for increasing an electrical resistance of a resistor, by nitridizing a fraction of a surface layer of the resistor with nitrogen particles. An embodiment comprises heating the fraction of the surface layer by a beam of radiation or particles, such that the resistor is within a chamber that includes the nitrogen-comprising molecules. An embodiment comprises using an anodization circuit to electrolytically generate nitrogen ions in an electrolytic solution in which the resistor is immersed, wherein the nitrogen particles include the electrolytically-generated nitrogen ions. An embodiment comprises immersing the resistor in a chemical solution which includes the nitrogen particles, wherein the nitrogen particles may include nitrogen-comprising liquid molecules, nitrogen ions, or a nitrogen-comprising gas dissolved in the chemical solution under pressurization. An embodiment comprises testing the resistor during a nitridizing step to determine whether the electrical resistance of the resistor is within a tolerance.

    摘要翻译： 通过用氮颗粒氮化电阻表面层的一部分来提高电阻器的电阻的方法。 一个实施方案包括通过辐射束或颗粒束加热表面层的部分，使得电阻在包含含氮分子的室内。 一个实施例包括使用阳极氧化电路在其中浸入电阻器的电解液中电解产生氮离子，其中氮颗粒包括电解产生的氮离子。 一个实施方案包括将电阻器浸入包括氮颗粒的化学溶液中，其中氮颗粒可以包括在加压下溶解在化学溶液中的含氮液体分子，氮离子或含氮气体。 一个实施例包括在氮化步骤期间测试电阻器以确定电阻器的电阻是否在公差范围内。

    ETCH APPARATUS
    10.
    发明申请
    ETCH APPARATUS 审中-公开
    ETCH设备

    公开(公告)号：US20080066864A1

    公开(公告)日：2008-03-20

    申请号：US11946370

    申请日：2007-11-28

    申请人： Arne Ballantine ,  Scott Estes ,  Emily Fisch ,  Gary Milo ,  Ronald Warren

    发明人： Arne Ballantine ,  Scott Estes ,  Emily Fisch ,  Gary Milo ,  Ronald Warren

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67086 ,  H01L21/31111 ,  H01L21/32134 ,  Y10S134/902

    摘要： An etch apparatus. The etch apparatus includes a tank coupled to a recirculating path that includes a dissolver. The dissolver includes a porous carbon matrix filter coated with silicon nitride. An etchant from the tank circulates through the recirculating path and performs a selective etching of a structure in the tank in contact with the etchant. The structure includes silicon nitride on a pad layer that includes silicon dioxide. The selective etching is characterized by the silicon nitride on the pad layer being selectively etched by the etchant relative to an etching by the etchant of the silicon dioxide. The etch apparatus further includes: means for dissolving the silicon nitride coated on the filter into the etchant at a controlled dissolution rate sufficient to cause the selective etching; and means for coating the silicon nitride onto the filter to facilitate the selective etching.

    摘要翻译： 蚀刻装置。 蚀刻装置包括耦合到包括溶解器的再循环路径的罐。 溶解器包括涂覆有氮化硅的多孔碳基质过滤器。 来自罐的蚀刻剂循环通过再循环路径，并执行对与蚀刻剂接触的罐中的结构的选择性蚀刻。 该结构包括在包括二氧化硅的焊盘层上的氮化硅。 选择性蚀刻的特征在于衬底层上的氮化硅相对于通过二氧化硅蚀刻剂的蚀刻被蚀刻剂选择性地蚀刻。 所述蚀刻装置还包括：以可控溶解速率将涂覆在所述过滤器上的所述氮化硅溶解到蚀刻剂中的装置，所述溶解速率足以引起所述选择性蚀刻; 以及用于将氮化硅涂覆到过滤器上以促进选择性蚀刻的装置。