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公开(公告)号：US5658471A
公开(公告)日：1997-08-19
申请号：US532439
申请日：1995-09-22
CPC分类号： B41J2/1642 , B41J2/1601 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1634 , B41J2/1646
摘要： Improved methods for fabricating the ink feed slots in silicon substrate for use in thermal ink-jet print heads is disclosed. One method involves the partial anisotropic etching of an ink feed slot in a silicon substrate for use in aligning the electrical resistive elements on one surface of the substrate. Another embodiment involves laser drilling alignment holes and anisotropically etching the substrate. In both methods, at least one photoresist masking and development step is eliminated thereby reducing fabrication time and alignment difficulties for locating the feed slots relative to the electrical resistance elements and increasing product yield.
摘要翻译： 公开了用于制造用于热喷墨打印头的硅衬底中的供墨槽的改进方法。 一种方法涉及在硅衬底中的供墨槽的部分各向异性蚀刻，以用于对准衬底的一个表面上的电阻元件。 另一个实施例涉及激光钻孔对准孔并各向异性地蚀刻衬底。 在两种方法中，消除了至少一个光致抗蚀剂掩模和显影步骤，从而减少了相对于电阻元件定位进料槽的制造时间和对准困难，并提高了产品产率。
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公开(公告)号：US06395148B1
公开(公告)日：2002-05-28
申请号：US09515840
申请日：2000-02-29
IPC分类号： C23C1434
CPC分类号： C23C14/34 , B41J2/14129 , B41J2/1601 , B41J2/1628 , B41J2/1642 , B41J2/1646 , B41J2202/03 , C23C14/165
摘要： The invention relates to a method for producing improved tantalum conductive and resistive materials for use in ink jet heater chips. Specifically, a method for producing thin film tantalum layers of a desired phase on a semiconductor substrate comprises depositing protective layers upon the semiconductor substrate; pre-sputter etching the semiconductor substrate; preheating the semiconductor substrate; maintaining the substrate at a predetermined temperature while depositing the thin film tantalum layer by sputtering for a predetermined period of time at a predetermined input power. Use of the method enables production of a desired tantalum phase for use on a semiconductor substrate thereby providing enhanced corrosion and/or cavitation resistance depending on the use of the semiconductor device.
摘要翻译： 本发明涉及一种用于制造用于喷墨加热器芯片的改进的钽导电和电阻材料的方法。 具体而言，在半导体衬底上制造期望相的薄膜钽层的方法包括在半导体衬底上沉积保护层; 预溅射蚀刻半导体衬底; 预热半导体衬底; 将基板保持在预定温度，同时以预定的输入功率通过溅射沉积薄膜钽层一段预定的时间。 使用该方法能够制造用于半导体衬底的期望的钽相，从而根据半导体器件的用途提供增强的腐蚀和/或气蚀电阻。
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公开(公告)号：US6142612A
公开(公告)日：2000-11-07
申请号：US186904
申请日：1998-11-06
CPC分类号： B41J2/1642 , B41J2/14129 , B41J2/1601 , B41J2/1628 , B41J2/1646 , B41J2202/03
摘要： A thermal ink jet printhead has a protective layer of Ta with an optimum thickness of about 9,000 A deposited on a protective layer of SiC under deposition conditions determined by a regression equation. The protective layer of SiC has an optimum thickness of about 5,000 A. The life of a thermal ink jet printhead having these two optimum thicknesses is at least twenty times the life of a thermal ink jet printhead not having these two optimum thicknesses in at least one embodiment. Etching of the layer of SiC prior to depositing the layer of Ta further increases the life of a thermal ink jet printhead.
摘要翻译： 热敏喷墨打印头具有在由回归方程确定的沉积条件下沉积在SiC保护层上的具有约9,000的最佳厚度的Ta的保护层。 SiC的保护层具有约5,000A的最佳厚度。具有这两种最佳厚度的热喷墨打印头的寿命至少是在至少一个具有这两个最佳厚度的热喷墨打印头的寿命的20倍 实施例。 在沉积Ta层之前对SiC层的蚀刻进一步增加了热喷墨打印头的寿命。
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