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    Removable ring for controlling edge deposition in substrate processing apparatus
    3.
    发明授权
    Removable ring for controlling edge deposition in substrate processing apparatus 失效
    用于控制基板处理装置中的边缘沉积的可拆卸环

    公开(公告)号：US5766365A

    公开(公告)日：1998-06-16

    申请号：US472220

    申请日：1995-06-07

    申请人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei

    发明人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/68 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00

    CPC分类号： C23C16/45521 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/68792

    摘要： A substrate processing apparatus comprising a processing chamber in which a substrate support is located. The substrate support, which is in the form of a heater pedestal, has a surface dimensioned to receive the substrate, and is circumscribed by a removable purge ring which defines an annulus between itself and the pedestal. At the outer edge of the pedestal is a purge gas manifold, in the form of a cavity between the purge ring and the pedestal. The lower end of the manifold is sealed by means of a mechanical seal that is formed at process temperature as the pedestal expands from heating and comes into contact with the purge ring's lower edge. The upper end of the manifold opens into the annulus defined by the purge ring and the pedestal. The manifold is arranged so that during processing, purge gas is injected into the manifold and projected toward the edge of a substrate received on the surface of the pedestal. This gas moves upwards through the annulus defined between the purge ring and the substrate support. Consequently, processing gas is prevented from contacting the extreme edge portion of the substrate. This reduces unwanted deposition on the peripheral edge and lower surface of the substrate.

    摘要翻译： 一种基板处理装置，包括其中位于基板支撑件的处理室。 处于加热器基座形式的衬底支撑件具有尺寸适于接收衬底的表面，并且由可拆卸的清除环限定，该清除环在其与底座之间限定环形空间。 在基座的外边缘处是净化气体歧管，其形式为清洗环和基座之间的空腔。 歧管的下端通过机械密封进行密封，机械密封在工艺温度下形成，因为基座从加热膨胀并与清洗环的下边缘接触。 歧管的上端开口进入由清洗环和基座限定的环形空间。 歧管被布置成使得在处理期间，吹扫气体被注入到歧管中并且朝着接收在基座的表面上的基板的边缘突出。 该气体向上移动通过清洗环和衬底支撑件之间限定的环形空间。 因此，防止处理气体与基板的最外缘部分接触。 这减少了衬底的外围边缘和下表面上的不希望的沉积。

    Heater with shadow ring and purge above wafer surface
    4.
    发明授权
    Heater with shadow ring and purge above wafer surface 失效
    加热器带有阴影环并在晶片表面上方吹扫

    公开(公告)号：US5888304A

    公开(公告)日：1999-03-30

    申请号：US626789

    申请日：1996-04-02

    申请人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei ,  Dale DuBois

    发明人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei ,  Dale DuBois

    IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

    CPC分类号： C23C16/45521 ,  C23C16/4585 ,  C23C16/46

    摘要： This invention provides a method and apparatus for supporting a wafer in a processing chamber, where the wafer is supported and heated from below via a heater pedestal having a diameter larger than that of the wafer. A process fluid flowing downward toward the top of the wafer is inhibited from depositing near the wafer edge by a shadow ring. The shadow ring, which is placed over but does not contact the wafer, physically masks an annular strip of the wafer near its edge. The shadow ring inhibits deposition of process fluides on the wafer in two distinct ways. First, the shadow ring physically obstructs process gas, flowing downward from above the wafer, from depositing on the masked portion of the wafer. Second, the shadow ring is used to direct a flow of a purge gas to inhibit process gas from seeping under the shadow ring and depositing near the wafer edge. A purge gas manifold is defined by a cylindrical annulus located concentrically below the shadow ring and circumscribing the heater pedestal. A purge gap between the wafer and the shadow ring forms the outlet of the purge gas manifold. The purge gas flows out of the purge gap, inhibiting the process gas from entering the purge gap, and thus further inhibiting deposition on the masked portion of the wafer.

    摘要翻译： 本发明提供了一种用于在处理室中支撑晶片的方法和装置，其中通过直径大于晶片直径的加热器基座从下方支撑晶片并从其下被加热。 向晶片顶部向下流动的工艺流体被阴影环抑制在晶片边缘附近沉积。 放置在但不接触晶片的阴影环在其边缘附近物理屏蔽晶片的环形条。 阴影环以两种截然不同的方式阻止了工艺流程在晶片上沉积。 首先，阴影环物理地阻挡从晶片上方向下流动的工艺气体沉积在晶片的掩蔽部分上。 第二，阴影环用于引导吹扫气体的流动，以阻止处理气体在阴影环下渗出并沉积在晶片边缘附近。 吹扫气体歧管由同心地位于阴影环下方并围绕加热器基座的圆柱形环限定。 晶片和阴影环之间的吹扫间隙形成吹扫气体歧管的出口。 净化气体流出吹扫间隙，阻止处理气体进入吹扫间隙，从而进一步抑制沉积在晶片的掩蔽部分上。

    Method for constructing a film on a semiconductor wafer
    5.
    发明授权
    Method for constructing a film on a semiconductor wafer 失效
    在半导体晶片上构造膜的方法

    公开(公告)号：US06699530B2

    公开(公告)日：2004-03-02

    申请号：US08808246

    申请日：1997-02-28

    申请人： Michal Danek ,  Marvin Liao ,  Eric Englhardt ,  Mei Chang ,  Yeh-Jen Kao ,  Dale R. DuBois ,  Alan F. Morrison

    发明人： Michal Danek ,  Marvin Liao ,  Eric Englhardt ,  Mei Chang ,  Yeh-Jen Kao ,  Dale R. DuBois ,  Alan F. Morrison

    IPC分类号： B05D306

    CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864

    摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

    摘要翻译： 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积一层材料。 接下来，将材料层退火。 一旦退火完成，材料可能被氧化。 或者，一旦退火完成，材料可能暴露于硅气体。 沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。 用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。 淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

    Substrate support shield in wafer processing reactors
    7.
    发明授权
    Substrate support shield in wafer processing reactors 失效
    晶圆处理反应器中的基板支撑屏蔽

    公开(公告)号：US5855687A

    公开(公告)日：1999-01-05

    申请号：US326506

    申请日：1994-10-20

    申请人： Dale R. DuBois ,  Alan F. Morrison ,  Richard A. Marsh ,  Mei Chang

    发明人： Dale R. DuBois ,  Alan F. Morrison ,  Richard A. Marsh ,  Mei Chang

    IPC分类号： C23C16/44 ,  C23C16/04 ,  C23C16/455 ,  C23C16/458 ,  H01L21/205 ,  H01L21/285 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00 ,  C23C14/00 ,  C23F1/00 ,  H01L21/00

    CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/042 ,  C23C16/4585 ,  H01L21/68735

    摘要： Apparatus for CVD processing wherein a wafer mounted on a vertically movable susceptor beneath a showerhead. The susceptor extends beyond the outer perimeter of the wafer such that, when the susceptor is raised into contact with a shield ring which normally rests on a ring support in the chamber, the shield ring engages outer portion of the susceptor beyond the perimeter of the wafer, lifting the shield ring off its support. The shield ring shields the edge of the top surface of the susceptor during the deposition, whereby unwanted deposition on the susceptor is prevented while, at the same time, allowing for deposition over the entire upper surface of the wafer. To center the shield ring and the susceptor with respect to each other, the shield ring may include a plurality of centering protrusions, at least some of which engage the susceptor as it moves upwards to lift the shield ring off its supports in the chamber.

    摘要翻译： 用于CVD处理的装置，其中安装在淋浴喷头下方的垂直移动的基座上的晶片。 感受体延伸超过晶片的外周边，使得当基座升高成与通常位于室中的环支撑件上的屏蔽环接触时，屏蔽环接合基座的外部部分超过晶片的周边 将护盾环从支架上取下。 屏蔽环在沉积期间屏蔽基座的顶表面的边缘，由此防止基座上的不希望的沉积，同时允许沉积在晶片的整个上表面上。 为了将屏蔽环和基座相对于彼此定位，屏蔽环可以包括多个定心突起，当其向上移动以将屏蔽环从腔室中的支撑件提升时，至少一些定心突起接合基座。

    Compound clamp ring for semiconductor wafers
    8.
    发明授权
    Compound clamp ring for semiconductor wafers 失效
    用于半导体晶片的复合夹环

    公开(公告)号：US5421401A

    公开(公告)日：1995-06-06

    申请号：US187231

    申请日：1994-01-25

    申请人： Semyon Sherstinsky ,  Mei Chang ,  Charles C. Harris ,  Alan F. Morrison ,  Virendra V. S. Rana ,  James F. Roberts ,  Ashok K. Sinha ,  Simon Tam

    发明人： Semyon Sherstinsky ,  Mei Chang ,  Charles C. Harris ,  Alan F. Morrison ,  Virendra V. S. Rana ,  James F. Roberts ,  Ashok K. Sinha ,  Simon Tam

    IPC分类号： C23C14/50 ,  C23C16/458 ,  H01L21/687 ,  F28F7/00 ,  C23C16/00

    CPC分类号： H01L21/68721 ,  C23C14/50 ,  C23C16/4585 ,  Y10S269/903

    摘要： A compound clamp ring secures a semiconductor wafer having a wafer flat portion to a wafer pedestal during wafer processing while maintaining a continuous seal between the wafer edges and the wafer pedestal to prevent leakage of coolant gases circulated at the backside of the wafer into the process environment. The clamp ring has an annular wafer clamp surface adapted to press a round portion of the wafer into sealing abutment with the wafer pedestal. A cavity formed in the clamp ring securely receives a comb-like array of resilient flexures that are adapted to apply a yieldable bias to the flat portion of the wafer to complete the seal between the wafer and the pedestal at the flat portion of the wafer; and encloses the flexures to shield the flexures from process gases.

    摘要翻译： 复合夹环在晶片处理期间将具有晶片平坦部分的半导体晶片固定到晶片基座，同时保持晶片边缘和晶片基座之间的连续密封，以防止在晶片背面循环的冷却剂气体泄漏到工艺环境中 。 夹紧环具有适于将晶圆的圆形部分压紧到与晶片基座密封抵接的环形晶片夹紧表面。 形成在夹紧环中的空腔牢固地容纳弹性挠曲的梳状阵列，其适于对晶片的平坦部分施加可屈服的偏压，以在晶片的平坦部分处完成晶片和基座之间的密封; 并包围挠曲件以将工件气体的挠曲屏蔽。

    Lift fingers for substrate processing apparatus
    9.
    发明授权
    Lift fingers for substrate processing apparatus 失效
    抬起手指进行基板处理装置

    公开(公告)号：US5332443A

    公开(公告)日：1994-07-26

    申请号：US73958

    申请日：1993-06-09

    申请人： Sandy M.-S. Chew ,  Shane D. Clark ,  Ron L. Rose ,  Dale R. DuBois ,  Cissy Leung ,  Alan F. Morrison ,  Manus K. Wong

    发明人： Sandy M.-S. Chew ,  Shane D. Clark ,  Ron L. Rose ,  Dale R. DuBois ,  Cissy Leung ,  Alan F. Morrison ,  Manus K. Wong

    IPC分类号： C23C16/458 ,  H01L21/00 ,  H01L21/673 ,  H01L21/687 ,  C23C16/00

    CPC分类号： H01L21/68742 ,  C23C16/4583 ,  H01L21/67103 ,  H01L21/68785

    摘要： A substrate lifting apparatus for use in a substrate processing apparatus which includes a thermal reactor having a substrate processing chamber and a substrate support located in the chamber. The lifting apparatus consists of a generally circular shaped support with four seats formed therein; four substrate lifting elements, each having a substrate engaging end and a securing tab sized to be received in a seat; a fastener, associated with each lifting element, which secures the tab into the seat; and an adjuster, associated with each lifting element, located between the tab and the seat. When the tab is secured in the seat and the adjuster is operated, the lifting element is caused to move in a plane parallel to a plane formed through the center of the fastener and the adjuster.

    摘要翻译： 一种用于基板处理装置的基板提升装置，其包括具有基板处理室和位于所述室中的基板支撑件的热反应器。 提升装置由大致圆形的支撑件组成，其中形成有四个座; 四个基板提升元件，每个基板提升元件各自具有基板接合端和尺寸设置成容纳在座中的固定片; 与每个提升元件相关联的紧固件，其将突片固定到座中; 以及与每个提升元件相关联的调节器，位于突片和座之间。 当突片固定在座椅中并且调节器被操作时，提升元件在平行于通过紧固件和调节器的中心形成的平面的平面中移动。