公开(公告)号：US09570635B2

公开(公告)日：2017-02-14

申请号：US14608465

申请日：2015-01-29

申请人： ATOMIC-ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH

发明人： Yu-Han Su ,  Wei-Yang Ma ,  Tsun-Neng Yang ,  Cheng-Dar Lee

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/02168 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/18 ,  Y02E10/50

摘要： The present invention discloses in detail a semiconductor device and a patterning method for the plated electrode thereof. By using the laser ablation method according to the prior art, the semiconductor substrate below the ARC is damaged by direct destructive burning. According to the present invention, an additional protection layer is inserted between the ARC and the semiconductor substrate. Then a laser is used for heating and liquefying the protection layer below the ARC, and thus separating the ARC from the liquefied protection layer underneath and forming pattered openings. Afterwards, by a plating process, nickel and copper can plated.

摘要翻译： 本发明公开了其电镀电极的半导体器件及其构图方法。 通过使用根据现有技术的激光烧蚀方法，ARC下方的半导体衬底被直接破坏性燃烧损坏。 根据本发明，在ARC和半导体衬底之间插入附加保护层。 然后使用激光来加热和液化ARC下方的保护层，从而将ARC与下面的液化保护层分开并形成图案化的开口。 之后，通过电镀工艺，可镀镍和铜。

公开(公告)号：US08852995B1

公开(公告)日：2014-10-07

申请号：US13959835

申请日：2013-08-06

申请人： Atomic Energy Council—Institute of Nuclear Energy Research

发明人： Yu-Han Su ,  Tsun-Neng Yang ,  Wei-Yang Ma ,  Chien-Chang Chao ,  Shan-Ming Lan

IPC分类号： H01L21/00 ,  H01L31/028 ,  H01L31/068 ,  H01L31/0224

CPC分类号： H01L31/028 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention relates to a preparation method for patternization of metal electrodes in silicon solar cells. After disposing an amorphous silicon layer on a silicon substrate processed by diffusion, laser light is projected on the amorphous silicon layer for patternization, and transforming the amorphous silicon with low optical conductivity into polysilicon with high optical conductivity thanks to the recrystallization process of the laser light. Then, after immersing the amorphous silicon layer in plating liquid, metal electrode can be formed accurately at the spots of the amorphous silicon layer patterned by laser light. No external voltage is required; plating reaction is induced by illumination directly.

摘要翻译： 本发明涉及硅太阳能电池中金属电极的图形化制备方法。 在通过扩散处理的硅衬底上设置非晶硅层之后，将激光投射在非晶硅层上进行图案化，并且由于激光的再结晶过程，将具有低光导率的非晶硅转化为具有高光导率的多晶硅 。 然后，在将非晶硅层浸渍在电镀液中后，可以通过激光图案化的非晶硅层的点处精确地形成金属电极。 无需外部电压; 通过照射直接诱导电镀反应。