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公开(公告)号:US08922029B2
公开(公告)日:2014-12-30
申请号:US13363396
申请日:2012-02-01
申请人: Atsushi Hiraishi , Toshio Sugano , Masahiro Yamaguchi , Yoji Nishio , Tsutomu Hara , Koichiro Aoki
发明人: Atsushi Hiraishi , Toshio Sugano , Masahiro Yamaguchi , Yoji Nishio , Tsutomu Hara , Koichiro Aoki
CPC分类号: G11C5/063 , G11C5/04 , G11C8/14 , H05K1/181 , H05K2201/09254 , H05K2201/09263 , H05K2201/10159 , Y02P70/611
摘要: An address signal line having a stub structure connects between at least three memory elements and a data transferring element and transmits address signals for the memory elements. An address terminal of the data transferring element has an impedance lower than a characteristic impedance of the address signal line. A wiring length TL0 from the data transferring element to a first branch point S1 where a branch line is branched at a shortest distance from the data transferring element is configured to become equal to or greater than a wiring length TL1 from the first branch point S1 to a second branch point S2 where a second branch line is branched. A wiring length TL3 from the second branch point S2 to a third branch point S3 where a third branch line is branched is configured to become greater than the wiring lengths TL0 and TL1.
摘要翻译: 具有短截线结构的地址信号线连接在至少三个存储器元件和数据传输元件之间,并传送存储器元件的地址信号。 数据传送元件的地址端子的阻抗低于地址信号线的特性阻抗。 从数据传送元件到分支线从数据传送元件到最短距离分支的第一分支点S1的布线长度TL0被配置成等于或大于从第一分支点S1到布线长度TL1 第二分支点S2,其中第二支线被分支。 从第二分支点S2到分支第三分支线的第三分支点S3的布线长度TL3被配置为变得大于布线长度TL0和TL1。
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公开(公告)号:US08134239B2
公开(公告)日:2012-03-13
申请号:US12239900
申请日:2008-09-29
申请人: Atsushi Hiraishi , Toshio Sugano , Masahiro Yamaguchi , Yoji Nishio , Tsutomu Hara , Koichiro Aoki
发明人: Atsushi Hiraishi , Toshio Sugano , Masahiro Yamaguchi , Yoji Nishio , Tsutomu Hara , Koichiro Aoki
CPC分类号: G11C5/063 , G11C5/04 , G11C8/14 , H05K1/181 , H05K2201/09254 , H05K2201/09263 , H05K2201/10159 , Y02P70/611
摘要: An address signal line having a stub structure connects between at least three memory elements and a data transferring element and transmits address signals for the memory elements. An address terminal of the data transferring element has an impedance lower than a characteristic impedance of the address signal line. A wiring length TL0 from the data transferring element to a first branch point S1 where a branch line is branched at a shortest distance from the data transferring element is configured to become equal to or greater than a wiring length TL1 from the first branch point S1 to a second branch point S2 where a second branch line is branched. A wiring length TL3 from the second branch point S2 to a third branch point S3 where a third branch line is branched is configured to become greater than the wiring lengths TL0 and TL1.
摘要翻译: 具有短截线结构的地址信号线连接在至少三个存储器元件和数据传输元件之间,并传送存储器元件的地址信号。 数据传送元件的地址端子的阻抗低于地址信号线的特性阻抗。 从数据传送元件到分支线从数据传送元件到最短距离分支的第一分支点S1的布线长度TL0被配置成等于或大于从第一分支点S1到布线长度TL1 第二分支点S2,其中第二支线被分支。 从第二分支点S2到分支第三分支线的第三分支点S3的布线长度TL3被配置为变得大于布线长度TL0和TL1。
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公开(公告)号:US20090086522A1
公开(公告)日:2009-04-02
申请号:US12239900
申请日:2008-09-29
申请人: Atsushi HIRAISHI , Toshio Sugano , Masahiro Yamaguchi , Yoji Nishio , Tsutomu Hara , Koichiro Aoki
发明人: Atsushi HIRAISHI , Toshio Sugano , Masahiro Yamaguchi , Yoji Nishio , Tsutomu Hara , Koichiro Aoki
CPC分类号: G11C5/063 , G11C5/04 , G11C8/14 , H05K1/181 , H05K2201/09254 , H05K2201/09263 , H05K2201/10159 , Y02P70/611
摘要: An address signal line having a stub structure connects between at least three memory elements and a data transferring element and transmits address signals for the memory elements. An address terminal of the data transferring element has an impedance lower than a characteristic impedance of the address signal line. A wiring length TL0 from the data transferring element to a first branch point S1 where a branch line is branched at a shortest distance from the data transferring element is configured to become equal to or greater than a wiring length TL1 from the first branch point S1 to a second branch point S2 where a second branch line is branched. A wiring length TL3 from the second branch point S2 to a third branch point S3 where a third branch line is branched is configured to become greater than the wiring lengths TL0 and TL1.
摘要翻译: 具有短截线结构的地址信号线连接在至少三个存储器元件和数据传输元件之间,并传送存储器元件的地址信号。 数据传送元件的地址端子的阻抗低于地址信号线的特性阻抗。 从数据传送元件到分支线从数据传送元件到最短距离分支的第一分支点S1的布线长度TL0被配置成等于或大于从第一分支点S1到布线长度TL1 第二分支点S2,其中第二支线被分支。 从第二分支点S2到分支第三分支线的第三分支点S3的布线长度TL3被配置为变得大于布线长度TL0和TL1。
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公开(公告)号:US07768867B2
公开(公告)日:2010-08-03
申请号:US11761470
申请日:2007-06-12
申请人: Yoji Nishio , Yutaka Uematsu , Seiji Funaba , Hideki Osaka , Tsutomu Hara , Koichiro Aoki
发明人: Yoji Nishio , Yutaka Uematsu , Seiji Funaba , Hideki Osaka , Tsutomu Hara , Koichiro Aoki
IPC分类号: G11C8/00
CPC分类号: G11C7/02 , G11C5/02 , G11C5/04 , H01L25/105 , H01L2924/0002 , H01L2924/15311 , H01L2924/15331 , H01L2924/00
摘要: Stacked semiconductor device includes plural memory chips, stacked together, in which waveform distortion at high speed transmission is removed. Stacked semiconductor device 1 includes plural memory chips 11, 12 stacked together. Data strobe signal (DQS) and inverted data strobe signal (/DQS), as control signals for inputting/outputting data twice per cycle, are used as two single-ended data strobe signals. Data strobe signal and inverted data strobe signal mate with each other. Data strobe signal line for the data strobe signal L4 is connected to data strobe signal (DQS) pad of first memory chip 11. Inverted data strobe signal line for /DQS signal L5 is connected to inverted data strobe signal (/DQS) pad of second memory chip 12.
摘要翻译: 叠层半导体器件包括多个存储器芯片,堆叠在一起,其中高速传输中的波形失真被去除。 堆叠半导体器件1包括堆叠在一起的多个存储器芯片11,12。 作为用于每周期两次输入/输出数据的控制信号的数据选通信号(DQS)和反相数据选通信号(/ DQS)被用作两个单端数据选通信号。 数据选通信号和反相数据选通信号相互配合。 用于数据选通信号L4的数据选通信号线连接到第一存储芯片11的数据选通信号(DQS)焊盘。用于/ DQS信号L5的反相数据选通信号线连接到第二存储芯片11的反相数据选通信号(/ DQS)焊盘 存储芯片12。
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公开(公告)号:US20060249829A1
公开(公告)日:2006-11-09
申请号:US11399608
申请日:2006-04-07
申请人: Mitsuaki Katagiri , Masanori Shibamoto , Tsutomu Hara , Koichiro Aoki , Naoya Kanda , Shuji Kikuchi , Hisashi Tanie
发明人: Mitsuaki Katagiri , Masanori Shibamoto , Tsutomu Hara , Koichiro Aoki , Naoya Kanda , Shuji Kikuchi , Hisashi Tanie
IPC分类号: H01L23/02
CPC分类号: H01L25/0657 , H01L24/50 , H01L2225/06527 , H01L2225/06551 , H01L2225/06579 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01082 , H01L2924/15311 , H01L2924/3011
摘要: A stacked type semiconductor device comprising: a baseboard having a terminal row formed at an end in which connecting terminals is arranged linearly and having a wiring pattern connected to the connecting terminals and external terminals; semiconductor chips having a pad row in which pads is arranged linearly in parallel to the terminal row and being stacked on the baseboard; and interposer boards having a wiring layer including a plurality of wires arranged in parallel with the same length for connecting between pads of the pad row and connecting terminals of the terminal row.
摘要翻译: 一种叠层型半导体器件,包括:基板,其端部形成在端部,所述端子排连接端子线性布置,并且具有连接到所述连接端子和外部端子的布线图案; 具有垫排的半导体芯片,其中焊盘与端子排平行布置并且堆叠在基板上; 以及具有布线层的插入板,所述布线层包括以相同长度平行布置的多条布线,用于连接所述焊盘排的焊盘和所述端子排的连接端子。
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公开(公告)号:US4165711A
公开(公告)日:1979-08-28
申请号:US802443
申请日:1977-06-01
申请人: Koichiro Aoki
发明人: Koichiro Aoki
CPC分类号: E02B3/046
摘要: A fish-gathering block comprising a plurality of supports erected on a base frame and supporting an upper structure. The current flows through an opening between the lower end of the upper structure and the base frame. This flowthrough opening prevents the sinking of the fish-gathering block into the sea-bottom by eliminating or materially weakening the ocean-current's excavating action.
摘要翻译: 一种集合块,包括竖立在基架上并支撑上部结构的多个支撑件。 电流流过上结构的下端和基架之间的开口。 这个通风口通过消除或实质上削弱了海洋现象的挖掘作用,防止了集鱼块沉入海底。
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