公开(公告)号：US08409897B2

公开(公告)日：2013-04-02

申请号：US13318623

申请日：2010-04-28

申请人： Atsushi Nishikawa ,  Yasufumi Fujiwara ,  Yoshikazu Terai ,  Takashi Kawasaki ,  Naoki Furukawa

发明人： Atsushi Nishikawa ,  Yasufumi Fujiwara ,  Yoshikazu Terai ,  Takashi Kawasaki ,  Naoki Furukawa

IPC分类号： H01L33/30

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/12 ,  H01L33/325

摘要： Disclosed are: an environmentally friendly red light-emitting semiconductor element which operates at low voltage, while having sufficient luminous efficiency and sufficient luminous intensity; and a method for manufacturing the same. Specifically disclosed is a method for manufacturing a red light-emitting semiconductor element, wherein an active layer is formed between a p-type layer and an n-type layer in a sequence of the formation steps of the p-type layer and the n-type layer, said active layer being obtained by adding Eu or Pr into GaN, InN, AlN or a mixed crystal thereof by substituting Ga, In or Al with Eu or Pr, using an organic metal vapor phase deposition method under specific temperature conditions in a site wherein light having a wavelength of 618-623 nm can be emitted. Also specifically disclosed is a red light-emitting semiconductor element which is manufactured by the method for manufacturing a red light-emitting semiconductor element.

摘要翻译： 公开了一种环境友好的红色发光半导体元件，其在低电压下工作，同时具有足够的发光效率和足够的发光强度; 及其制造方法。 具体公开了一种制造红色发光半导体元件的方法，其中在p型层和n型层的形成步骤的顺序中，在p型层和n型层之间形成有源层， 所述有源层通过在特定温度条件下使用有机金属气相沉积法在Ga，In或Al中用Eu或Pr代替来将Al或Pr添加到GaN，InN，AlN或其混晶中而获得， 可以发射波长为618-623nm的光的场所。 还具体公开了通过红色发光半导体元件的制造方法制造的红色发光半导体元件。

公开(公告)号：US20120077299A1

公开(公告)日：2012-03-29

申请号：US13318623

申请日：2010-04-28

申请人： Atsushi Nishikawa ,  Yasufumi Fujiwara ,  Yoshikazu Terai ,  Takashi Kawasaki ,  Naoki Furukawa

发明人： Atsushi Nishikawa ,  Yasufumi Fujiwara ,  Yoshikazu Terai ,  Takashi Kawasaki ,  Naoki Furukawa

IPC分类号： H01L33/30

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/12 ,  H01L33/325

摘要： Disclosed are: an environmentally friendly red light-emitting semiconductor element which operates at low voltage, while having sufficient luminous efficiency and sufficient luminous intensity; and a method for manufacturing the same. Specifically disclosed is a method for manufacturing a red light-emitting semiconductor element, wherein an active layer is formed between a p-type layer and an n-type layer in a sequence of the formation steps of the p-type layer and the n-type layer, said active layer being obtained by adding Eu or Pr into GaN, InN, AlN or a mixed crystal thereof by substituting Ga, In or Al with Eu or Pr, using an organic metal vapor phase deposition method under specific temperature conditions in a site wherein light having a wavelength of 618-623 nm can be emitted. Also specifically disclosed is a red light-emitting semiconductor element which is manufactured by the method for manufacturing a red light-emitting semiconductor element.

摘要翻译： 公开了一种环境友好的红色发光半导体元件，其在低电压下工作，同时具有足够的发光效率和足够的发光强度; 及其制造方法。 具体公开了一种制造红色发光半导体元件的方法，其中在p型层和n型层的形成步骤的顺序中，在p型层和n型层之间形成有源层， 所述有源层通过在特定温度条件下使用有机金属气相沉积法在Ga，In或Al中用Eu或Pr代替来将Al或Pr添加到GaN，InN，AlN或其混晶中而获得， 可以发射波长为618-623nm的光的场所。 还具体公开了通过红色发光半导体元件的制造方法制造的红色发光半导体元件。

公开(公告)号：US20060071218A1

公开(公告)日：2006-04-06

申请号：US10539635

申请日：2003-06-13

申请人： Yoshikazu Takeda ,  Yasufumi Fujiwara ,  Ryo Oga ,  WooSik Lee

发明人： Yoshikazu Takeda ,  Yasufumi Fujiwara ,  Ryo Oga ,  WooSik Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L29/127 ,  H01S5/3412

摘要： A semiconductor multi-layered structure (1) having non-uniform quantum dots formed without requiring lattice strain is of a double hetero junction structure in which an active layer (3) has clad layers (5, 6, 16) laid on its opposite sides, wherein the clad layers are larger in forbidden band than the active layer (3), and the active layer (3) includes at least one layer of non-uniform quantum dots (2) formed without requiring lattice strain and wherein the non-uniform quantum dots in the layer (2) are composed of compound semiconductor material and different from one another in either size or material composition or both. A light emitting diode (15, 15′), a semiconductor laser diode (20) and a semiconductor light amplifier (30) are also provided, each having a semiconductor multi-layered structure (1, 1′) with non-uniform quantum dots. They can emit or amplify light wide in range of wavelengths.

摘要翻译： 具有不需要晶格应变形成的不均匀量子点的半导体多层结构（1）具有双异质结结构，其中有源层（3）具有放置在其相对侧的覆层（5,6） ，其中所述包层比所述有源层（3）的禁带大，并且所述有源层（3）包括形成为不需要晶格应变的至少一层不均匀量子点（2），并且其中所述不均匀 层（2）中的量子点由化合物半导体材料组成，并且在尺寸或材料组成中都相互不同，或两者均不同。 还提供了一种发光二极管（15,15'），半导体激光二极管（20）和半导体光放大器（30），每个具有非均匀量子点的半导体多层结构（1,1'） 。 它们可以在波长范围内发射或放大光。