公开(公告)号：US20110198602A1

公开(公告)日：2011-08-18

申请号：US13122937

申请日：2009-11-05

申请人： Akira Nanbu ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Junichi Nakai ,  Tomoya Kishi ,  Toshiaki Takagi ,  Shigenobu Namba ,  Mamoru Nagao ,  Nobuhiro Kobayashi

发明人： Akira Nanbu ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Junichi Nakai ,  Tomoya Kishi ,  Toshiaki Takagi ,  Shigenobu Namba ,  Mamoru Nagao ,  Nobuhiro Kobayashi

IPC分类号： H01L33/08 ,  C22C21/00 ,  C23C14/34 ,  C22C21/12 ,  H01L33/16

CPC分类号： C23C14/18 ,  C23C14/3414 ,  G02F1/136227 ,  G02F1/1368 ,  H01L21/2855 ,  H01L23/53219 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  Y10T428/12014 ,  H01L2924/00

摘要： Disclosed is an Al alloy film which can be in direct contact with a transparent pixel electrode in a wiring structure of a thin film transistor substrate that is used in a display device, and which has improved corrosion resistance against an amine remover liquid that is used during the production process of the thin film transistor. Also disclosed is a display device using the Al alloy film. Specifically disclosed is an Al alloy film for a display device, said Al alloy film being directly connected with a transparent conductive film on a substrate of a display device, and containing 0.05-2.0 atom % of Ge, at least one element selected from among element group X (Ni, Ag, Co, Zn and Cu), and 0.02-2 atom % of at least one element selected from among element group Q consisting of the rare earth elements. A Ge-containing deposit and/or a Ge-concentrated part is present in the Al alloy film for a display device. Also specifically disclosed is a display device comprising the Al alloy film.

摘要翻译： 公开了一种Al合金膜，其可以与用于显示装置的薄膜晶体管基板的布线结构中的透明像素电极直接接触，并且其对于在用于显示装置的胺去除剂液体下具有改善的耐腐蚀性 薄膜晶体管的生产工艺。 还公开了使用Al合金膜的显示装置。 具体公开了一种用于显示装置的Al合金膜，所述Al合金膜与显示装置的基板上的透明导电膜直接连接，并含有0.05-2.0原子％的Ge，至少一种元素选自元素 组X（Ni，Ag，Co，Zn和Cu）和0.02-2原子％的选自由稀土元素构成的元素组Q中的至少一种元素。 在用于显示装置的Al合金膜中存在含Ge沉积物和/或Ge浓缩部分。 还具体公开了包括Al合金膜的显示装置。

公开(公告)号：US20100328247A1

公开(公告)日：2010-12-30

申请号：US12918727

申请日：2009-02-20

申请人： Aya Miki ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Tomoya Kishi ,  Akira Nanbu

发明人： Aya Miki ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Tomoya Kishi ,  Akira Nanbu

IPC分类号： G06F3/041

CPC分类号： G06F3/041 ,  C22C21/00 ,  H05K1/09

摘要： Disclosed is a highly reliable touch panel sensor comprising a guiding wiring that is less likely to cause an increase in electrical resistance and disconnection with the elapse of time, has a low electrical resistance, can ensure electrical conduction to a transparent conductive film, and can be connected directly to the transparent conductive film. The touch panel sensor comprises a transparent conductive film and a guiding wiring made of an aluminum alloy film connected directly to the transparent conductive film. The aluminum alloy film comprises 0.2 to 10 atomic% in total of at least one element selected from an X group consisting of Ni and Co. The aluminum alloy film has a hardness of 2 to 15 GPa.

摘要翻译： 公开了一种高度可靠的触摸面板传感器，其包括不太可能随时间推移而导致电阻和断开增加的引导布线，具有低电阻，可以确保对透明导电膜的导电，并且可以 直接连接到透明导电膜。 触摸面板传感器包括透明导电膜和由直接连接到透明导电膜的铝合金膜制成的引导布线。 铝合金膜的总和为0.2〜10原子％，选自由Ni，Co组成的X族中的至少一种元素。铝合金膜的硬度为2〜15GPa。

公开(公告)号：US20110019350A1

公开(公告)日：2011-01-27

申请号：US12922965

申请日：2009-04-23

申请人： Junichi Nakai ,  Akira Nanbu ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Aya Miki

发明人： Junichi Nakai ,  Akira Nanbu ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Aya Miki

IPC分类号： H05K7/00 ,  C22C21/00 ,  C23C14/14

CPC分类号： H01L23/53219 ,  C23C14/185 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.

摘要翻译： 公开了一种用于显示装置的Al合金膜，即使应用低温热处理也能够实现令人满意的低电阻，可以实现Al合金膜与直接连接的Al透明像素电极之间的接触电阻的令人满意的降低 Al合金膜，并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子％的Co和0.2〜1.0原子％的Ge，并且满足Al合金膜中的Co含量和Ge含量具有由式（1）表示的关系的要求：[ Ge]≥0.25×[Co] +0.2（1）式（1）中，[Ge]表示Al合金膜中Ge的含量，原子％ [Co]表示Al合金膜中Co的含量，原子％。

公开(公告)号：US08422207B2

公开(公告)日：2013-04-16

申请号：US12922965

申请日：2009-04-23

申请人： Junichi Nakai ,  Akira Nanbu ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Aya Miki

发明人： Junichi Nakai ,  Akira Nanbu ,  Hiroshi Goto ,  Hiroyuki Okuno ,  Aya Miki

IPC分类号： G06F1/16

CPC分类号： H01L23/53219 ,  C23C14/185 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.

摘要翻译： 公开了一种用于显示装置的Al合金膜，即使应用低温热处理，也能够实现令人满意的低电阻，可以实现Al合金膜和直接连接到Al合金膜的透明像素电极之间的接触电阻的令人满意的降低 Al合金膜，并具有优异的耐腐蚀性。 Al合金膜直接连接到显示装置中的基板上的透明导电膜。 Al合金膜包含0.05〜0.5原子％的Co和0.2〜1.0原子％的Ge，并且满足Al合金膜中的Co含量和Ge含量具有由式（1）表示的关系的要求：[ Ge]≥0.25×[Co] +0.2（1）式（1）中，[Ge]表示Al合金膜中Ge的含量，原子％ [Co]表示Al合金膜中Co的含量，原子％。

公开(公告)号：US20110008640A1

公开(公告)日：2011-01-13

申请号：US12922764

申请日：2009-03-31

申请人： Hiroshi Goto ,  Akira Nanbu ,  Junichi Nakai ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Aya Miki

发明人： Hiroshi Goto ,  Akira Nanbu ,  Junichi Nakai ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Aya Miki

IPC分类号： G02F1/1343 ,  C09K19/00 ,  C22F1/04 ,  C23C14/14

CPC分类号： H01L29/458 ,  C22C21/00 ,  C22C21/10 ,  C23C14/3414 ,  H01L27/12 ,  H01L27/124 ,  H01L29/4908 ,  Y10T428/12049

摘要： Disclosed is a display device comprising an aluminum alloy film. In a wiring structure of a thin-film transistor substrate for use in display devices, the aluminum alloy film can realize direct contact between a thin film of an aluminum alloy and a transparent pixel electrode, can simultaneously realize low electric resistance and heat resistance, and can improve resistance to corrosion by an amine-based peeling liquid and an alkaline developing solution used in a thin-film transistor production process. In the display device, an oxide electroconductive film is in direct contact with an Al alloy film and at least a part of the Al alloy component is precipitated on the contact surface of the Al alloy film. The Al alloy film comprises at least one element (element X1) selected from the group consisting of Ni, Ag, Zn, and Co and at least one element (element X2) which, together with the element X1, can form an intermetallic compound. An intermetallic compound, which has a maximum diameter of not more than 150 nm and is represented by at least one of X1—X2 and Al—X1—X2, is formed in the Al alloy film.

摘要翻译： 公开了一种包括铝合金膜的显示装置。 在用于显示装置的薄膜晶体管基板的布线结构中，铝合金膜可以实现铝合金薄膜和透明像素电极之间的直接接触，同时可以实现低电阻和耐热性，并且 可以通过在薄膜晶体管制造方法中使用的胺系剥离液和碱性显影液来提高耐腐蚀性。 在显示装置中，氧化物导电膜与Al合金膜直接接触，Al合金成分的至少一部分析出在Al合金膜的接触面上。 Al合金膜包括选自Ni，Ag，Zn和Co中的至少一种元素（元素X1）和与元素X1一起可以形成金属间化合物的至少一种元素（元素X2）。 在Al合金膜中形成具有最大直径不大于150nm并由至少一个X1-X2和Al-X1-X2表示的金属间化合物。

公开(公告)号：US08163143B2

公开(公告)日：2012-04-24

申请号：US12172442

申请日：2008-07-14

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

IPC分类号： C23C14/00

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/0491 ,  C22C21/00 ,  C22F1/04 ,  B22F9/082 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18

摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

摘要翻译： 本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度） 用扫描电子显微镜观察垂直于溅射靶的平面的横截面为2000倍，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积与 Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上， 和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

公开(公告)号：US20090026072A1

公开(公告)日：2009-01-29

申请号：US12172442

申请日：2008-07-14

申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Akira Nanbu ,  Mototaka Ochi ,  Hiroshi Goto ,  Nobuyuki Kawakami

IPC分类号： C23C14/34 ,  C23C16/00

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/0491 ,  C22C21/00 ,  C22F1/04 ,  B22F9/082 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18

摘要： The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

摘要翻译： 本发明涉及包含Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶，其中当在（a）中的（¼）t至（¾）t（t：厚度） 用扫描电子显微镜以2000倍的倍数观察垂直于溅射靶的平面的横截面，（1）平均粒径为0.3μm〜3μm的Al-Ni系金属间化合物的总面积， Al-Ni系金属间化合物主要由Al和Ni构成，Al-Ni体系金属间化合物的总面积为面积率的70％以上， 和（2）相对于Al-Ni-La-Si体系金属间化合物的总面积，平均粒径为0.2μm〜2μm的Al-Ni-La-Si系金属间化合物的总面积为 Al-Ni-La-Si系金属间化合物主要由Al，Ni，La和Si组成，面积分数为70％以上。

公开(公告)号：US20120045360A1

公开(公告)日：2012-02-23

申请号：US13263992

申请日：2010-04-14

申请人： Hiromi Matsumura ,  Akira Nanbu ,  Masaya Ehira ,  Shinya Okamoto

发明人： Hiromi Matsumura ,  Akira Nanbu ,  Masaya Ehira ,  Shinya Okamoto

IPC分类号： B32B15/00 ,  B05D3/02 ,  B05D3/00 ,  C23C14/14 ,  C23C14/34

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/0425 ,  C22C9/00 ,  B22F9/082 ,  C23C14/34 ,  B22F3/15

摘要： Disclosed is a Cu—Ga alloy sputtering target which enables the formation of a Cu—Ga sputtering film having excellent uniformity in film component composition (film uniformity), enables the reduction of occurrence of arcing during sputtering, has high strength, and rarely undergoes cracking during sputtering. Specifically disclosed is a Cu—Ga alloy sputtering target which comprises a Cu-based alloy containing Ga, has an average crystal particle diameter of 10 μm or less, and has a porosity of 0.1% or less.

摘要翻译： 公开了一种Cu-Ga合金溅射靶，其能够形成具有优异的膜组分组成（膜均匀性）的Cu-Ga溅射膜，能够减少溅射期间电弧的发生，具有高强度，并且很少发生裂纹 在溅射期间。 具体公开了包含含有Ga的Cu基合金的Cu-Ga合金溅射靶，其平均结晶粒径为10μm以下，孔隙率为0.1％以下。