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    Field effect transistor
    1.
    发明授权
    Field effect transistor 有权
    场效应晶体管

    公开(公告)号：US08148752B2

    公开(公告)日：2012-04-03

    申请号：US13021118

    申请日：2011-02-04

    申请人： Ayanori Ikoshi ,  Shingo Hashizume ,  Masahiro Hikita ,  Hiroto Yamagiwa ,  Manabu Yanagihara

    发明人： Ayanori Ikoshi ,  Shingo Hashizume ,  Masahiro Hikita ,  Hiroto Yamagiwa ,  Manabu Yanagihara

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/41758

    摘要： A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode and a drain electrode are formed on the semiconductor stack so as to be separated from each other. A gate electrode is formed between the source electrode and the drain electrode so as to be separated from the source electrode and the drain electrode. A hole injection portion is formed near the drain electrode. The hole injection portion has a p-type third nitride semiconductor layer, and a hole injection electrode formed on the third nitride semiconductor layer. The hole injection electrode and the drain electrode have substantially the same potential.

    摘要翻译： 场效应晶体管包括形成在衬底上的半导体堆叠，并且具有第一氮化物半导体层和第二氮化物半导体层。 源电极和漏电极形成在半导体堆叠上以便彼此分离。 在源电极和漏电极之间形成栅电极，以与源电极和漏电极分离。 在漏电极附近形成空穴注入部。 空穴注入部分具有p型第三氮化物半导体层和形成在第三氮化物半导体层上的空穴注入电极。 空穴注入电极和漏电极具有大致相同的电位。

    TWO-WIRE AC SWITCH
    4.
    发明申请
    TWO-WIRE AC SWITCH 有权
    双线交流开关

    公开(公告)号：US20110204807A1

    公开(公告)日：2011-08-25

    申请号：US13032297

    申请日：2011-02-22

    申请人： Shingo HASHIZUME ,  Ayanori Ikoshi ,  Hiroto Yamagiwa ,  Yasuhiro Uemoto ,  Manabu Yanagihara

    发明人： Shingo HASHIZUME ,  Ayanori Ikoshi ,  Hiroto Yamagiwa ,  Yasuhiro Uemoto ,  Manabu Yanagihara

    IPC分类号： H05B41/16 ,  H03K17/56

    CPC分类号： H01L29/808 ,  H01L29/2003 ,  H01L29/42316 ,  H03K17/12 ,  H03K2217/0009

    摘要： A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch 100a connected between an AC power supply 101 and a load 102 includes: a bidirectional switch element 103 which flows passing current bi-directionally, selects whether to flow or block the current, is connected in series with the AC power supply 101 and the load 102 to form a closed-loop circuit, and is made of a group-III nitride semiconductor; a full-wave rectifier 104 performing full-wave rectification on power supplied from the AC power supply 101; a power supply circuit 105 smoothing a voltage after the full-wave rectification to generate DC power; a first gate drive circuit 107 and a second gate drive circuit 108 each outputting a control signal to the bidirectional switch element 103; and a control circuit 106 controlling the first and second gate drive circuits 107 and 108.

    摘要翻译： 提供一种抑制来自开关内的双向开关元件的热量的二线交流开关。 连接在交流电源101和负载102之间的二线交流开关100a包括：双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103， 电源101和负载102以形成闭环电路，并且由III族氮化物半导体制成; 全波整流器104对从AC电源101提供的电力进行全波整流; 电源电路105，对全波整流后的电压进行平滑化，生成直流电力; 每个向双向开关元件103输出控制信号的第一栅极驱动电路107和第二栅极驱动电路108; 以及控制电路106，其控制第一和第二栅极驱动电路107和108。

    Two-wire AC switch
    5.
    发明授权
    Two-wire AC switch 有权
    双线交流开关

    公开(公告)号：US08593068B2

    公开(公告)日：2013-11-26

    申请号：US13032297

    申请日：2011-02-22

    申请人： Shingo Hashizume ,  Ayanori Ikoshi ,  Hiroto Yamagiwa ,  Yasuhiro Uemoto ,  Manabu Yanagihara

    发明人： Shingo Hashizume ,  Ayanori Ikoshi ,  Hiroto Yamagiwa ,  Yasuhiro Uemoto ,  Manabu Yanagihara

    IPC分类号： H05B39/02

    CPC分类号： H01L29/808 ,  H01L29/2003 ,  H01L29/42316 ,  H03K17/12 ,  H03K2217/0009

    摘要： A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch 100a connected between an AC power supply 101 and a load 102 includes: a bidirectional switch element 103 which flows passing current bi-directionally, selects whether to flow or block the current, is connected in series with the AC power supply 101 and the load 102 to form a closed-loop circuit, and is made of a group-III nitride semiconductor; a full-wave rectifier 104 performing full-wave rectification on power supplied from the AC power supply 101; a power supply circuit 105 smoothing a voltage after the full-wave rectification to generate DC power; a first gate drive circuit 107 and a second gate drive circuit 108 each outputting a control signal to the bidirectional switch element 103; and a control circuit 106 controlling the first and second gate drive circuits 107 and 108.

    摘要翻译： 提供一种抑制来自开关内的双向开关元件的热量的二线交流开关。 连接在交流电源101和负载102之间的二线交流开关100a包括：双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103， 电源101和负载102以形成闭环电路，并且由III族氮化物半导体制成; 全波整流器104对从AC电源101提供的电力进行全波整流; 电源电路105，对全波整流后的电压进行平滑化，生成直流电力; 每个向双向开关元件103输出控制信号的第一栅极驱动电路107和第二栅极驱动电路108; 以及控制电路106，其控制第一和第二栅极驱动电路107和108。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110193171A1

    公开(公告)日：2011-08-11

    申请号：US12905801

    申请日：2010-10-15

    申请人： Hiroto Yamagiwa ,  Shingo Hashizume ,  Ayanori Ikoshi ,  Manabu Yanagihara ,  Yasuhiro Uemoto

    发明人： Hiroto Yamagiwa ,  Shingo Hashizume ,  Ayanori Ikoshi ,  Manabu Yanagihara ,  Yasuhiro Uemoto

    IPC分类号： H01L27/088

    CPC分类号： H01L29/7786 ,  H01L27/0266 ,  H01L27/0605 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42364 ,  H01L29/8124 ,  H01L29/861

    摘要： A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.

    摘要翻译： 半导体器件包括形成在第一元件区上的第一晶体管和包括形成在第二元件区上的第二晶体管的第一保护元件。 第二保护元件欧姆电极连接到第一栅电极，第一保护元件欧姆电极连接到第一欧姆电极，第一保护元件栅电极连接至第一保护元件欧姆电极和 第二保护元件欧姆电极。 第二元件区域的面积小于第一元件区域。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08598628B2

    公开(公告)日：2013-12-03

    申请号：US13231514

    申请日：2011-09-13

    申请人： Masahiro Hikita ,  Manabu Yanagihara

    发明人： Masahiro Hikita ,  Manabu Yanagihara

    IPC分类号： H01L29/72

    CPC分类号： H01L29/42316 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/518 ,  H01L29/7786

    摘要： A normally off semiconductor device with a reduced off-state leakage current, which is applicable to a power switching element, includes: a substrate; an undoped GaN layer formed above the substrate; an undoped AlGaN layer formed on the undoped GaN layer; a source electrode and a drain electrode, formed on the undoped GaN layer or the undoped AlGaN layer; a P-type GaN layer formed on the undoped AlGaN layer and disposed between the source electrode and the drain electrode; and a gate electrode formed on the P-type GaN layer, wherein the undoped GaN layer includes an active region including a channel and an inactive region not including the channel, and the P-type GaN layer is disposed to surround the source electrode.

    摘要翻译： 具有减小的截止状态漏电流的常闭半导体器件，其适用于功率开关元件，包括：衬底; 在衬底上形成未掺杂的GaN层; 在未掺杂的GaN层上形成未掺杂的AlGaN层; 源电极和漏电极，形成在未掺杂的GaN层或未掺杂的AlGaN层上; 形成在未掺杂的AlGaN层上并设置在源电极和漏电极之间的P型GaN层; 以及形成在所述P型GaN层上的栅电极，其中所述未掺杂的GaN层包括包括沟道的有源区和不包括所述沟道的非活性区，并且所述P型GaN层设置为围绕所述源电极。