摘要:
A pattern generation method of generating a three-dimensional pattern to be formed at a template for use in a method of forming a pattern by filling a resist material in the three-dimensional pattern of the template includes performing at least one of adjustment of a depth of the three-dimensional pattern and division of the three-dimensional pattern, based on a relationship between a filling time of the resist material and a dimension or shape of the three-dimensional pattern.
摘要:
In the pattern forming method according to the embodiment, second templates are manufactured by an imprint technology using first templates manufactured by applying a predetermined misalignment distribution for each shot on a first substrate by an exposure apparatus. Then, an upper-layer-side pattern is formed by an imprint technology using a second template in which an inter-layer misalignment amount between a lower-layer-side pattern already formed above a second substrate and the upper-layer-side pattern to be formed above the second substrate becomes equal to or lower than a predetermined reference value.
摘要:
According to one embodiment, firstly, an inversion pattern having a periodic pattern in which a first line pattern and a space are inversed and a non-periodic pattern arranged at an interval which is substantially equal to the width of the first line pattern from the end of the periodic pattern is formed above a processing object so as to correspond to the plurality of spaces between a plurality of first line patterns in a first pattern and the space between the first pattern and a second pattern. Next, a sidewall film is formed around the inversion pattern, and the periodic pattern is removed selectively. Thereafter, the processing object is etched using the sidewall pattern formed of the sidewall film and the non-periodic pattern surrounded by the sidewall film as masks.
摘要:
A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.
摘要:
A patterning method includes: forming a first film on a workpiece substrate; forming a second film on the first film, the second film being a silicon film having a lower optical absorption coefficient with respect to EUV (extreme ultraviolet) light than the first film; forming a resist film on the second film; selectively irradiating the resist film with the EUV light; and developing the resist film.