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公开(公告)号：US3585609A
公开(公告)日：1971-06-15
申请号：US3585609D
申请日：1969-07-01
发明人： ROBROCK RICHARD B
CPC分类号： H03K5/15026 , G11C11/35
摘要： A signal voltage source exhibiting a digital waveform is connected in series with a DC bias voltage source and the combination is placed across the anode and cathode of a bulk semiconductor which exhibits the phenomenon of domain propagation. Pairs of contacts are placed along the surface of the device such that when a propagating domain is between a specified set of contacts, the voltage measured across these contacts is directly related to the digital signal applied across the device. The potential drop across contact pairs is in turn used to control memory devices which store the digital signal.
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公开(公告)号：US3558929A
公开(公告)日：1971-01-26
申请号：US3558929D
申请日：1968-05-27
发明人： ROBROCK RICHARD B
CPC分类号： H03K3/02
摘要： A pair of two-valley, bulk semiconductor devices is connected in series across a DC voltage source such that each of them is biased above the domain sustaining potential but below the oscillation sustaining potential. Input pulses are applied to the common junction of the two devices with a negative pulse causing domain nucleation in a first while the second remains in the ohmic state. Positive input pulses cause domain nucleation in the second device, while the first remains in the ohmic state. Positive input pulses cause domain nucleation in the second device, while the first remains in the ohmic state. Since the creation of a high-field domain effects a sharp reduction in device current, the voltage at the common junction is a pulse output signal with a positive pulse being generated in response to a positive input trigger and a negative pulse being generated in response to a negative input trigger. The width of each pulse is specified by the transit time of the domain.
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公开(公告)号：US3550035A
公开(公告)日：1970-12-22
申请号：US3550035D
申请日：1968-12-20
发明人： ROBROCK RICHARD B
CPC分类号： H03B9/12
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