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公开(公告)号：US11450721B2
公开(公告)日：2022-09-20
申请号：US16476474
申请日：2018-09-21
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang Wang , Bin Zhou , Ce Zhao , Tongshang Su , Yuankui Ding , Ming Wang
IPC: H01L27/32 , G09G3/3233 , H01L51/56
Abstract: The present disclosure provides a pixel unit, a method of manufacturing the same, and an array substrate. The pixel unit includes: a driving transistor, a switching transistor, and a light emitting element on a substrate; wherein the driving transistor has an input electrode electrically connected to a first power supply terminal and an output electrode electrically connected to a first terminal of the light emitting element; the switching transistor has an input electrode electrically connected to a data line, a control electrode electrically connected to a scan line, and an output electrode electrically connected to a gate electrode of the driving transistor; wherein the switching transistor and the driving transistor have different threshold voltages.
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公开(公告)号：US11430816B2
公开(公告)日：2022-08-30
申请号：US16862865
申请日：2020-04-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.
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公开(公告)号：US11355647B2
公开(公告)日：2022-06-07
申请号：US16331008
申请日：2018-08-17
Inventor： Yingbin Hu , Ce Zhao , Dongfang Wang , Bin Zhou , Jun Liu , Yuankui Ding , Wei Li
IPC: H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , G02F1/1368 , H01L27/32
Abstract: A thin film transistor includes an active layer, a source electrode and a drain electrode. The active layer includes a conductive region and the conductive region is between the source electrode and the drain electrode and is spaced apart from at least one of the source electrode and the drain electrode.
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4.发明授权
公开(公告)号：US11011437B2
公开(公告)日：2021-05-18
申请号：US16452952
申请日：2019-06-26
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Wei Song , Jun Wang , Yang Zhang , Wei Li , Liangchen Yan
IPC: H01L21/66 , G03F7/20 , H01L21/44 , H01L21/467 , H01L29/66 , H01L29/786
Abstract: The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.
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5.发明申请
公开(公告)号：US20200168744A1
公开(公告)日：2020-05-28
申请号：US16410823
申请日：2019-05-13
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Jun Wang , Jun Liu , Guangyao Li , Yongchao Huang , Wei Li , Liangchen Yan
IPC: H01L29/786 , H01L29/66
Abstract: A method for manufacturing a thin film transistor includes forming a light shielding layer and a buffer layer covering the light shielding layer on a substrate. The method includes forming an active layer including a peripheral region and a channel region. The method includes forming a gate insulating layer covering the channel region and forming a contact hole exposing the light shielding layer. The method includes forming a source region and a drain region disposed on both sides of the channel region. The method includes forming an electrode layer including a gate electrode, a source electrode and a drain electrode spaced apart one another. The method includes forming a dielectric layer covering the gate electrode, the source electrode, the drain electrode and the buffer layer.
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6.发明授权
公开(公告)号：US10581029B2
公开(公告)日：2020-03-03
申请号：US15802431
申请日：2017-11-02
Inventor： Jun Wang , Ce Zhao , Dongfang Wang , Bin Zhou
Abstract: The present disclosure provides a method for manufacturing an organic electroluminescence device, including steps of: adjusting a grating period of a periodic grating structure in such a manner that a wavelength of an emergent light beam caused by SP-coupling is within a predetermined range of a light-emission peak of the organic electroluminescence device; and forming the periodic grating structure in the organic electroluminescence device in accordance with the obtained grating period by adjustment.
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7.发明申请
公开(公告)号：US20200056033A1
公开(公告)日：2020-02-20
申请号：US16452773
申请日：2019-06-26
Inventor： Wei Li , Jingjing Xia , Bin Zhou , Dongfang Wang , Ce Zhao , Yingbin Hu , Wei Song
IPC: C08L33/12 , C08L33/16 , C08K5/08 , C08K5/32 , C08F220/28 , C08F220/34 , C08K3/22 , H01L27/32 , C08F292/00
Abstract: The present disclosure provides a pixel defining layer and a preparation material thereof, and a display substrate and a preparation method thereof, and relates to the field of display technologies. The preparation material of the pixel defining layer comprises the following components in mass percentages: 5%-30% of a lyophobic film-forming polymer, 0.5%-1% of lyophilic magnetic nanoparticles, 0.5%-2% of a photoinitiator, 0.1%-1% of a reactive monomer, 0.1%-1% of an additive and the balance of a solvent.
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8.发明申请
公开(公告)号：US20200035721A1
公开(公告)日：2020-01-30
申请号：US16337544
申请日：2018-05-29
Inventor： Tongshang Su , Guangcai Yuan , Dongfang Wang , Ce Zhao , Bin Zhou , Jun Liu , Jifeng Shao , Qinghe Wang , Yang Zhang
IPC: H01L27/12 , H01L29/423 , H01L29/66 , H01L29/786 , H01L29/417
Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.
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公开(公告)号：US10439163B2
公开(公告)日：2019-10-08
申请号：US15768972
申请日：2017-10-13
Inventor： Tongshang Su , Guangcai Yuan , Dongfang Wang , Bin Zhou , Ce Zhao , Jun Liu , Ning Liu , Kai Xu , Shengping Du
Abstract: An organic light emitting diode (OLED) display panel and a manufacture method thereof, a display device are disclosed. The method includes providing a base substrate, including a display area and a package area; forming a driving transistor, a passivation layer and an OLED display unit on the base substrate, wherein the OLED display unit and the driving transistor are formed in the display area, the passivation layer is formed in both the display area and the package area and includes a plurality of recesses in the package area and a via hole in the display area, and the via hole and the plurality of recesses are formed by same one patterning process; coating a sealant in the package area to cover the plurality of recesses; and providing a package substrate, the package substrate and the base substrate being assembled together and sealed oppositely by the sealant.
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10.发明授权
公开(公告)号：US09614098B2
公开(公告)日：2017-04-04
申请号：US14435688
申请日：2014-06-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Ce Zhao , Chunsheng Jiang , Guangcai Yuan
IPC: H01L21/00 , H01L29/786 , H01L29/66 , H01L21/02 , H01L21/426 , H01L29/24
CPC classification number: H01L27/1225 , H01L21/02565 , H01L21/426 , H01L29/24 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/7869
Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first, second, and third pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.
