公开(公告)号：US09647127B2

公开(公告)日：2017-05-09

申请号：US14436309

申请日：2014-07-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiang Liu ,  Woobong Lee

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02658 ,  H01L29/66969

Abstract: Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device comprises an insulating layer and a metal oxide semiconductor layer which are adjacent to each other, and the insulating layer is formed by steps of: forming a first silicon oxide film; and stabilizing the first silicon oxide film by filling a silicon dangling bond therein with a filling atom capable of being bonded to the silicon dangling bond.

公开(公告)号：US10923505B2

公开(公告)日：2021-02-16

申请号：US16535447

申请日：2019-08-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Feng Guan ,  Lu Wang ,  Woobong Lee ,  Jianhua Du ,  Yang Lv ,  Zhaohui Qiang ,  Guangcai Yuan

IPC: H01L27/12

Abstract: The present disclosure provides a display substrate, a fabricating method thereof, and a display device. The method includes forming a light shielding layer on a surface of a base substrate, and forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate. Forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate includes forming a semiconductor layer at a position where an active layer is to be formed in each of the plurality of thin film transistors, generating heat using the light shielding layer, and utilizing the heat to crystallize the semiconductor layer.

公开(公告)号：US20240313006A1

公开(公告)日：2024-09-19

申请号：US18027753

申请日：2022-06-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Youngsuk Song ,  Woobong Lee

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/1222 ,  H01L27/1259

Abstract: A thin film transistor (TFT), a preparation method therefor, and a display device are provided in the present disclosure, which belong to the field of display technology. The TFT includes a first active layer and a gate electrode arranged on a substrate extending along a first direction, the first active layer is an arch structure, the gate electrode is penetrated the arch structure, and an orthographic projection of the first active layer on the substrate covers an orthographic projection of the gate electrode on the substrate. The technical solutions of the present disclosure can improve an on-state current of the TFT and reduce an area of the TFT.

公开(公告)号：US20200185535A1

公开(公告)日：2020-06-11

申请号：US16528622

申请日：2019-08-01

Applicant: BOE Technology Group Co., Ltd.

Inventor： Feng Guan ,  Guangcai Yuan ,  Zhi Wang ,  Chen Xu ,  Qi Yao ,  Zhanfeng Cao ,  Ce Ning ,  Woobong Lee ,  Lei Chen

IPC: H01L29/786 ,  H01L27/12

Abstract: An oxide thin film transistor, an array substrate, and preparation methods thereof are disclosed. The method for preparing an oxide thin film transistor comprises a step of forming a pattern comprising an oxide semiconductor active layer on a substrate, wherein the step comprises: forming an amorphous oxide semiconductor thin film on the substrate; performing an excimer laser annealing, at least at a position in the amorphous oxide semiconductor thin film corresponding to a channel region of oxide semiconductor active layer to be formed, such that the amorphous oxide semiconductor material at the laser-annealed position is crystallized, to form a crystalline oxide semiconductor material; and forming the pattern comprising the oxide semiconductor active layer.

公开(公告)号：US08912538B2

公开(公告)日：2014-12-16

申请号：US13822480

申请日：2012-12-17

Applicant: Boe Technology Group Co., Ltd.

Inventor： Xiang Liu ,  Woobong Lee

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/15 ,  H01L21/00 ,  H01L21/84 ,  G02F1/1368 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/127 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/78618 ,  H01L29/78693

Abstract: Embodiments of the present invention provide a thin film transistor array substrate, a method for manufacturing the same, a display panel and a display device. The method for manufacturing the thin film transistor array substrate comprises: sequentially depositing a first metal oxide layer, a second metal oxide layer and a source and drain metal layer, conductivity of the first metal oxide layer being smaller than conductivity of the second metal oxide layer; patterning the first metal oxide layer, the second metal oxide layer and the source and drain metal layer, so as to form an active layer, a buffer layer, a source electrode and a drain electrode, respectively. According to technical solutions of the embodiments of the invention, it is possible that the manufacturing process of the metal oxide TFT array substrate is simplified, and the production cost of products is reduced.

Abstract translation: 本发明的实施例提供一种薄膜晶体管阵列基板，其制造方法，显示面板和显示装置。 制造薄膜晶体管阵列基板的方法包括：依次沉积第一金属氧化物层，第二金属氧化物层和源极和漏极金属层，第一金属氧化物层的导电性小于第二金属氧化物层的导电率 ; 图案化第一金属氧化物层，第二金属氧化物层和源极和漏极金属层，以分别形成有源层，缓冲层，源电极和漏电极。 根据本发明的实施方式的技术方案，可以简化金属氧化物TFT阵列基板的制造工序，降低产品的生产成本。

公开(公告)号：US20140110702A1

公开(公告)日：2014-04-24

申请号：US13994746

申请日：2012-10-09

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jun Cheng ,  Woobong Lee

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L29/66969 ,  H01L29/7869

Abstract: Disclosed are an oxide thin film transistor (oxide-TFT) which can prevent H+ ions from invading into an active layer to maintain a stable characteristics of the TFT, a method for fabricating the oxide-TFT, an array substrate, and a display apparatus. The oxide-TFT comprises a substrate (200), and a gate electrode (201) and a gate insulating layer (202) sequentially disposed on the substrate. An active layer (203) is disposed on the gate insulating layer and is coated with a blocking layer, which at least comprises a first blocking layer (204) and a second blocking layer (205).

Abstract translation: 公开了一种可以防止H +离子侵入有源层以保持TFT的稳定特性的氧化物薄膜晶体管（氧化物TFT），制造氧化物TFT的方法，阵列衬底和显示装置。 氧化物TFT包括基板（200）和顺序地设置在基板上的栅电极（201）和栅极绝缘层（202）。 有源层（203）设置在栅极绝缘层上并且涂覆有至少包括第一阻挡层（204）和第二阻挡层（205）的阻挡层。

公开(公告)号：US10916662B2

公开(公告)日：2021-02-09

申请号：US16528622

申请日：2019-08-01

Applicant: BOE Technology Group Co., Ltd.

Inventor： Feng Guan ,  Guangcai Yuan ,  Zhi Wang ,  Chen Xu ,  Qi Yao ,  Zhanfeng Cao ,  Ce Ning ,  Woobong Lee ,  Lei Chen

IPC: H01L29/786 ,  H01L27/12

Abstract: An oxide thin film transistor, an array substrate, and preparation methods thereof are disclosed. The method for preparing an oxide thin film transistor comprises a step of forming a pattern comprising an oxide semiconductor active layer on a substrate, wherein the step comprises: forming an amorphous oxide semiconductor thin film on the substrate; performing an excimer laser annealing, at least at a position in the amorphous oxide semiconductor thin film corresponding to a channel region of oxide semiconductor active layer to be formed, such that the amorphous oxide semiconductor material at the laser-annealed position is crystallized, to form a crystalline oxide semiconductor material; and forming the pattern comprising the oxide semiconductor active layer.

公开(公告)号：US09947757B2

公开(公告)日：2018-04-17

申请号：US15075579

申请日：2016-03-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangcai Yuan ,  Woobong Lee

IPC: H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L29/786 ,  H01L29/49

CPC classification number: H01L29/42384 ,  H01L29/401 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2029/42388

Abstract: A method for manufacturing the thin film transistor, including: forming a gate, an active layer and a gate insulating layer disposed between the gate and the active layer; wherein the gate insulating layer is in a double-layer structure comprising a first gate insulating layer next to the gate and a second gate insulating layer next to the active layer, and one of the first gate insulating layer and the second gate insulating layer is annealed.

公开(公告)号：US09246007B2

公开(公告)日：2016-01-26

申请号：US13994746

申请日：2012-10-09

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jun Cheng ,  Woobong Lee

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L29/66969 ,  H01L29/7869

Abstract: Disclosed are an oxide thin film transistor (oxide-TFT) which can prevent H+ ions from invading into an active layer to maintain a stable characteristics of the TFT, a method for fabricating the oxide-TFT, an array substrate, and a display apparatus. The oxide-TFT comprises a substrate (200), and a gate electrode (201) and a gate insulating layer (202) sequentially disposed on the substrate. An active layer (203) is disposed on the gate insulating layer and is coated with a blocking layer, which at least comprises a first blocking layer (204) and a second blocking layer (205).

Abstract translation: 公开了一种可以防止H +离子侵入有源层以保持TFT的稳定特性的氧化物薄膜晶体管（氧化物TFT），制造氧化物TFT的方法，阵列衬底和显示装置。 氧化物TFT包括基板（200）和顺序地设置在基板上的栅电极（201）和栅极绝缘层（202）。 有源层（203）设置在栅极绝缘层上并且涂覆有至少包括第一阻挡层（204）和第二阻挡层（205）的阻挡层。

公开(公告)号：US20140175385A1

公开(公告)日：2014-06-26

申请号：US13878905

申请日：2012-10-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao Li ,  Gang Wang ,  Woobong Lee ,  Li Zhang

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3276 ,  H01L27/1225 ,  H01L27/3248 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5234 ,  H01L51/5271 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/305 ,  H01L2251/5323 ,  H01L2251/5353

Abstract: Embodiments of the invention disclose an OLED device, an AMOLED display device and a method for manufacturing the AMOLED display device. the AMOLED display device comprises a TFT active layer, a pixel electrode layer and an OLED device; the OLED device comprises a cathode layer and a functional layer, and the pixel electrode layer serves as the anode layer of the OLED device; alternatively, the OLED device comprises an anode layer and a functional layer, and the pixel electrode layer serves as the cathode layer of the OLED device. Moreover, the TFT active layer and the pixel electrode layer are formed from a same IGZO film by a patterning process.

Abstract translation: 本发明的实施例公开了OLED装置，AMOLED显示装置和用于制造AMOLED显示装置的方法。 AMOLED显示装置包括TFT有源层，像素电极层和OLED器件; OLED器件包括阴极层和功能层，并且像素电极层用作OLED器件的阳极层; 或者，OLED器件包括阳极层和功能层，并且像素电极层用作OLED器件的阴极层。 此外，TFT有源层和像素电极层通过图案化工艺由相同的IGZO膜形成。