公开(公告)号：US09231146B2

公开(公告)日：2016-01-05

申请号：US13607855

申请日：2012-09-10

申请人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/028 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/065 ,  H01L31/074

CPC分类号： H01L31/18 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/065 ,  H01L31/068 ,  H01L31/074 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes providing an absorption layer of a first crystalline semiconductor material having a first conductivity type, and epitaxially growing a second crystalline semiconductor layer of a second conductivity type that is opposite the first conductivity type. The first conductivity type may be p-type and the second conductivity type may be n-type, or the first conductivity type may be n-type and the second conductivity type may be p-type. The temperature of the epitaxially growing the second crystalline semiconductor layer does not exceed 500° C. Contacts are formed in electrical communication with the absorption layer and the second crystalline semiconductor layer.

摘要翻译： 一种形成光电器件的方法，包括提供具有第一导电类型的第一晶体半导体材料的吸收层，并且外延生长与第一导电类型相反的第二导电类型的第二晶体半导体层。 第一导电类型可以是p型，第二导电类型可以是n型，或者第一导电类型可以是n型，第二导电类型可以是p型。 外延生长第二晶体半导体层的温度不超过500℃。触点形成为与吸收层和第二晶体半导体层电连通。

公开(公告)号：US09099585B2

公开(公告)日：2015-08-04

申请号：US13605068

申请日：2012-09-06

申请人： Bahman Hekmatshoar-Tabari ,  Marinus Hopstaken ,  Dae-Gyu Park ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Marinus Hopstaken ,  Dae-Gyu Park ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0216 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/03762 ,  H01L31/02167 ,  H01L31/075 ,  H01L31/1864 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a semiconductor material of a photovoltaic device that includes providing a surface of a hydrogenated amorphous silicon containing material, and annealing the hydrogenated amorphous silicon containing material in a deuterium containing atmosphere. Deuterium from the deuterium-containing atmosphere is introduced to the lattice of the hydrogenated amorphous silicon containing material through the surface of the hydrogenated amorphous silicon containing material. In some embodiments, the deuterium that is introduced to the lattice of the hydrogenated amorphous silicon containing material increases the stability of the hydrogenated amorphous silicon containing material.

摘要翻译： 一种形成光电器件的半导体材料的方法，该方法包括提供含氢化非晶硅的材料的表面，以及在含氘气氛中对含氢化非晶硅的材料进行退火。 来自含氘气体的氘通过含氢化非晶硅材料的表面被引入到含氢化非晶硅材料的晶格中。 在一些实施方案中，引入含氢可氢化非晶硅的晶格的晶格的氘增加了含氢化非晶硅的材料的稳定性。

公开(公告)号：US20130092218A1

公开(公告)日：2013-04-18

申请号：US13274938

申请日：2011-10-17

申请人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0264 ,  H01L31/18

CPC分类号： H01L31/0725 ,  H01L31/0693 ,  H01L31/1808 ,  Y02E10/544 ,  Y02P70/521

摘要： A multi-junction III-V photovoltaic device is provided that includes at least one top cell comprised of at least one III-V compound semiconductor material; and a bottom cell in contact with a surface of the at least one top cell. The bottom cell includes a germanium-containing layer in contact with the at least one top cell, at least one intrinsic hydrogenated silicon-containing layer in contact with a surface of the germanium-containing layer, and at least one doped hydrogenated silicon-containing layer in contact with a surface of the at least one intrinsic hydrogenated silicon-containing layer. The intrinsic and doped silicon-containing layers can be amorphous, nano/micro-crystalline, poly-crystalline or single-crystalline.

摘要翻译： 提供了多结III-V光伏器件，其包括至少一个由至少一个III-V化合物半导体材料构成的顶部电池; 以及与所述至少一个顶部单元的表面接触的底部单元。 底部电池包括与至少一个顶部电池接触的含锗层，与含锗层的表面接触的至少一个本征氢化含硅层和至少一个掺杂氢化含硅层 与所述至少一个本征氢化含硅层的表面接触。 本征和掺杂的含硅层可以是无定形，纳米/微晶，多晶或单晶。

公开(公告)号：US20130025654A1

公开(公告)日：2013-01-31

申请号：US13193871

申请日：2011-07-29

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/1892 ,  H01L31/02167 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/076 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes bonding a substrate to a germanium-containing semiconductor layer with a stressor layer, wherein the stressor layer cleaves the germanium-containing semiconductor layer. At least one semiconductor layer is formed on a cleaved surface of the germanium-containing semiconductor layer that is opposite the conductivity type of the germanium-containing semiconductor layer to provide a first solar cell. The first solar cell absorbs a first range of wavelengths. At least one second solar cell may be formed on the first solar cell, wherein the at least one second solar cell is composed of at least one semiconductor material to absorb a second range of wavelengths that is different than the first range wavelengths absorbed by the first solar cell.

摘要翻译： 一种形成光伏器件的方法，该光电器件包括将衬底粘合到含锗半导体层与应力层，其中所述应力层切割含锗半导体层。 在与含锗半导体层的导电类型相反的含锗半导体层的切割表面上形成至少一个半导体层以提供第一太阳能电池。 第一太阳能电池吸收第一波长范围。 可以在第一太阳能电池上形成至少一个第二太阳能电池，其中至少一个第二太阳能电池由至少一个半导体材料组成，以吸收不同于由第一太阳能电池吸收的第一范围波长的第二波长范围 太阳能电池。

公开(公告)号：US20120211079A1

公开(公告)日：2012-08-23

申请号：US13032826

申请日：2011-02-23

申请人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/036 ,  H01L31/0264 ,  H01L31/18 ,  H01L31/0368

CPC分类号： H01L31/18 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/065 ,  H01L31/068 ,  H01L31/074 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes providing an absorption layer of a first crystalline semiconductor material having a first conductivity type, and epitaxially growing a second crystalline semiconductor layer of a second conductivity type that is opposite the first conductivity type. The first conductivity type may be p-type and the second conductivity type may be n-type, or the first conductivity type may be n-type and the second conductivity type may be p-type. The temperature of the epitaxially growing the second crystalline semiconductor layer does not exceed 500° C. Contacts are formed in electrical communication with the absorption layer and the second crystalline semiconductor layer.

摘要翻译： 一种形成光电器件的方法，包括提供具有第一导电类型的第一晶体半导体材料的吸收层，并且外延生长与第一导电类型相反的第二导电类型的第二晶体半导体层。 第一导电类型可以是p型，第二导电类型可以是n型，或者第一导电类型可以是n型，第二导电类型可以是p型。 外延生长第二晶体半导体层的温度不超过500℃。触点形成为与吸收层和第二晶体半导体层电连通。

公开(公告)号：US09099596B2

公开(公告)日：2015-08-04

申请号：US13194301

申请日：2011-07-29

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0745 ,  H01L31/18 ,  H01L31/0312 ,  H01L31/0747 ,  H01L31/0725 ,  H01L31/078 ,  H01L31/20

CPC分类号： H01L31/0725 ,  C23C14/3407 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/074 ,  H01L31/0747 ,  H01L31/078 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.

摘要翻译： 光伏器件和方法包括掺杂的含锗衬底，在第一侧耦合到衬底的发射极触点和在与第一侧相对的一侧耦合到衬底的后触点。 发射极包括与衬底相反的导电类型的至少一个掺杂层，而后接触包括至少一个与衬底相同导电类型的掺杂层。 发射极接触的至少一个掺杂层或背接触的至少一个掺杂层与衬底直接接触，并且发射极接触或后接触的至少一个掺杂层包括n型材料 具有小于衬底的电子亲和力，或具有大于衬底的孔亲合力的p型材料。

公开(公告)号：US09018517B2

公开(公告)日：2015-04-28

申请号：US13290404

申请日：2011-11-07

申请人： Bahman Hekmatshoar-Tabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/00 ,  H01L21/00 ,  H01L31/0304 ,  H01L31/072 ,  H01L31/18

CPC分类号： H01L31/074 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/26513 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/0336 ,  H01L31/036 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1852 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/544

摘要： A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm.

摘要翻译： 一种光电器件，包括由具有第一导电性的IV型半导体材料的吸收层提供的单结太阳能电池和具有第二导电性的III-V族半导体材料的发射极层，其中III-V族半导体材料 具有不大于50nm的厚度。

公开(公告)号：US08912424B2

公开(公告)日：2014-12-16

申请号：US13612632

申请日：2012-09-12

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/00

CPC分类号： H01L31/1892 ,  H01L31/02167 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/076 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes bonding a substrate to a germanium-containing semiconductor layer with a stressor layer, wherein the stressor layer cleaves the germanium-containing semiconductor layer. At least one semiconductor layer is formed on a cleaved surface of the germanium-containing semiconductor layer that is opposite the conductivity type of the germanium-containing semiconductor layer to provide a first solar cell. The first solar cell absorbs a first range of wavelengths. At least one second solar cell may be formed on the first solar cell, wherein the at least one second solar cell is composed of at least one semiconductor material to absorb a second range of wavelengths that is different than the first range wavelengths absorbed by the first solar cell.

摘要翻译： 一种形成光伏器件的方法，该光电器件包括将衬底粘合到含锗半导体层与应力层，其中所述应力层切割含锗半导体层。 在与含锗半导体层的导电类型相反的含锗半导体层的切割表面上形成至少一个半导体层以提供第一太阳能电池。 第一太阳能电池吸收第一波长范围。 可以在第一太阳能电池上形成至少一个第二太阳能电池，其中至少一个第二太阳能电池由至少一个半导体材料组成，以吸收不同于由第一太阳能电池吸收的第一范围波长的第二波长范围 太阳能电池。

公开(公告)号：US08778448B2

公开(公告)日：2014-07-15

申请号：US13188214

申请日：2011-07-21

申请人： Bahman Hekmatshoar-Tabari ,  Marinus Hopstaken ,  Dae-Gyu Park ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Marinus Hopstaken ,  Dae-Gyu Park ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： B05D5/00

CPC分类号： H01L31/03762 ,  H01L31/02167 ,  H01L31/075 ,  H01L31/1864 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a semiconductor material of a photovoltaic device that includes providing a surface of a hydrogenated amorphous silicon containing material, and annealing the hydrogenated amorphous silicon containing material in a deuterium containing atmosphere. Deuterium from the deuterium-containing atmosphere is introduced to the lattice of the hydrogenated amorphous silicon containing material through the surface of the hydrogenated amorphous silicon containing material. In some embodiments, the deuterium that is introduced to the lattice of the hydrogenated amorphous silicon containing material increases the stability of the hydrogenated amorphous silicon containing material.

摘要翻译： 一种形成光电器件的半导体材料的方法，该方法包括提供含氢化非晶硅的材料的表面，以及在含氘气氛中对含氢化非晶硅的材料进行退火。 来自含氘气体的氘通过含氢化非晶硅材料的表面被引入到含氢化非晶硅材料的晶格中。 在一些实施方案中，引入含氢可氢化非晶硅的晶格的晶格的氘增加了含氢化非晶硅的材料的稳定性。

公开(公告)号：US20120325304A1

公开(公告)日：2012-12-27

申请号：US13604198

申请日：2012-09-05

申请人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/04

CPC分类号： H01L31/0747 ,  B82Y20/00 ,  H01L31/022441 ,  H01L31/035236 ,  H01L31/035254 ,  H01L31/0516 ,  Y02E10/50

摘要： A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

摘要翻译： 光电器件和方法包括耦合到衬底的第一侧上的发射极侧结构的衬底和与衬底的第一侧相对的一侧的背侧结构。 发射极侧结构或背面结构包括在宽带隙层和窄带隙层之间交替的层，以提供与衬底有效增加的带偏移和/或在单个材料接触上有效地更高的掺杂水平的多层接触。 发射极触点耦合到器件的光收集端部上的发射极侧结构。 背面接触件与与光收集端部相对的背面结构耦合。