公开(公告)号：US20130342279A1

公开(公告)日：2013-12-26

申请号：US13529934

申请日：2012-06-21

申请人： Berardi Sensale-Rodriguez ,  Rusen Yan ,  Huili (Grace) Xing ,  Michelle M. Kelly ,  Tian Fang ,  Debdeep Jena ,  Lei Liu

发明人： Berardi Sensale-Rodriguez ,  Rusen Yan ,  Huili (Grace) Xing ,  Michelle M. Kelly ,  Tian Fang ,  Debdeep Jena ,  Lei Liu

IPC分类号： H03C1/02

CPC分类号： H03C1/02 ,  H03C7/00

摘要： A wave amplitude modulator for modulating a transmitted electromagnetic wave includes one or multiple self-gated capacitively coupled pair(s) of electron layers such as semiconductor or semimetal layers. Two electrical contacts are placed to each layer of electrons of the self-gated pair(s), and a power source is electrically connected to them. The power source, by varying the voltage applied between layers of electrons, tunes the electron density thereof, thereby adjusting the optical conductivity thereof, and the change in the optical conductivity of the layers of electrons causes an amplitude modulation of the transmitted electromagnetic wave passing through the capacitively coupled layers of electrons.

摘要翻译： 用于调制发射的电磁波的波幅调制器包括一个或多个自门电容耦合的电子层对，例如半导体层或半金属层。 两个电触头被放置到自门控对的每个电子层，并且电源与它们电连接。 电源通过改变施加在电子层之间的电压调谐其电子密度，从而调节其光导率，并且电子层的光导率的变化引起通过的透射电磁波的幅度调制 电容耦合的电子层。

公开(公告)号：US08836446B2

公开(公告)日：2014-09-16

申请号：US13529934

申请日：2012-06-21

申请人： Berardi Sensale-Rodriguez ,  Huili (Grace) Xing ,  Rusen Yan ,  Michelle M. Kelly ,  Tian Fang ,  Debdeep Jena ,  Lei Liu

发明人： Berardi Sensale-Rodriguez ,  Huili (Grace) Xing ,  Rusen Yan ,  Michelle M. Kelly ,  Tian Fang ,  Debdeep Jena ,  Lei Liu

IPC分类号： H03C1/02 ,  H03C7/00

CPC分类号： H03C1/02 ,  H03C7/00

摘要： A wave amplitude modulator for modulating a transmitted electromagnetic wave includes one or multiple self-gated capacitively coupled pair(s) of electron layers such as semiconductor or semimetal layers. Two electrical contacts are placed to each layer of electrons of the self-gated pair(s), and a power source is electrically connected to them. The power source, by varying the voltage applied between layers of electrons, tunes the electron density thereof, thereby adjusting the optical conductivity thereof, and the change in the optical conductivity of the layers of electrons causes an amplitude modulation of the transmitted electromagnetic wave passing through the capacitively coupled layers of electrons.

摘要翻译： 用于调制发射的电磁波的波幅调制器包括一个或多个自门电容耦合的电子层对，例如半导体层或半金属层。 两个电触头被放置到自门控对的每个电子层，并且电源与它们电连接。 电源通过改变施加在电子层之间的电压调谐其电子密度，从而调节其光导率，并且电子层的光导率的变化引起通过的透射电磁波的幅度调制 电容耦合的电子层。

公开(公告)号：US08835998B2

公开(公告)日：2014-09-16

申请号：US12967892

申请日：2010-12-14

申请人： John Simon ,  Debdeep Jena ,  Huili Xing

发明人： John Simon ,  Debdeep Jena ,  Huili Xing

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/201 ,  H01L29/861 ,  H01L33/32 ,  H01S5/30 ,  H01S5/323 ,  H01L29/20 ,  H01S5/042

CPC分类号： H01L29/8613 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02631 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/32341

摘要： A compositionally graded semiconductor device and a method of making same are disclosed that provides an efficient p-type doping for wide bandgap semiconductors by exploiting electronic polarization within the crystalline lattice. The compositional graded semiconductor graded device includes a graded heterojunction interface that exhibits a 3D bound polarization-induced sheet charge that spreads in accordance with ρπ(z)=−∇·P(z), where ρπ(z) is a volume charge density in a polar (z) direction, and ∇ is a divergence operator, wherein the graded heterojunction interface is configured to exhibit substantially equivalent conductivities along both lateral and vertical directions relative to the graded heterojunction interface.

摘要翻译： 公开了组成分级的半导体器件及其制造方法，其通过利用晶格内的电子极化为宽带隙半导体提供有效的p型掺杂。 组成渐变半导体梯度装置包括梯度异质结界面，其显示出根据＆rgr;（z）= - ∇·P（z）展开的3D界限极化诱导的片材电荷，其中＆rgr;＆pgr;（z） 是极性（z）方向上的体积电荷密度，∇是发散算子，其中分级异质结界面被配置为相对于渐变异质结界面沿横向和垂直方向呈现基本上等效的电导率。

公开(公告)号：US20060231860A1

公开(公告)日：2006-10-19

申请号：US11241804

申请日：2005-09-29

申请人： Umesh Mishra ,  Huili Xing ,  Debdeep Jena ,  Siddharth Rajan

发明人： Umesh Mishra ,  Huili Xing ,  Debdeep Jena ,  Siddharth Rajan

IPC分类号： H01L31/00

CPC分类号： H01L29/812 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/7783 ,  H01L29/7787

摘要： Novel GaN/AlGaN metal-semiconductor field-effect transistor (MESFET) structures grown without any impurity doping in the channel. A high-mobility polarization-induced bulk channel charge is created by grading the channel region linearly from GaN to Al0.3Ga0.7N over a distance, e.g., 1000 Å. A polarization-doped field effect transistor (PolFET) was fabricated and tested under DC and RF conditions. A current density of 850 mA/mm and transconductance of 93 mS/mm was observed under DC conditions. Small-signal characterization of 0.7 μm gate length devices had a cutoff frequency, ƒτ=19 GHz, and a maximum oscillation of ƒmax=46 GHz. The PolFETs perform better than comparable MESFETs with impurity-doped channels, and are suitable for high microwave power applications. An important advantage of these devices over AlGaN/GaN HEMTs is that the transconductance vs. gate voltage profile can be tailored by compositional grading for better large-signal linearity.

摘要翻译： 新型GaN / AlGaN金属半导体场效应晶体管（MESFET）结构在通道中没有任何杂质掺杂生长。 高迁移率极化诱导的体通道电荷是通过使沟道区域在一定距离（例如）1000处从GaN线性地分级至Al 0.3 N 0.7 N N N而产生的。 在DC和RF条件下制造和测试偏振掺杂场效应晶体管（PolFET）。 在直流条件下观察到电流密度为850mA / mm，跨导为93mS / mm。 0.7μm门极长度器件的小信号表征具有截止频率f T T T = 19GHz，f max max = 46GHz的最大振荡。 PolFET比具有杂质掺杂通道的可比MESFET性能更好，适用于高微波功率应用。 这些器件对AlGaN / GaN HEMT的一个重要优点是跨导与栅极电压分布可以通过组合分级来定制，以获得更好的大信号线性度。

公开(公告)号：US07525130B2

公开(公告)日：2009-04-28

申请号：US11241804

申请日：2005-09-29

申请人： Umesh K. Mishra ,  Huili Xing ,  Debdeep Jena ,  Siddharth Rajan

发明人： Umesh K. Mishra ,  Huili Xing ,  Debdeep Jena ,  Siddharth Rajan

IPC分类号： H01L31/00

CPC分类号： H01L29/812 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/7783 ,  H01L29/7787

摘要： Novel GaN/AlGaN metal-semiconductor field-effect transistor (MESFET) structures grown without any impurity doping in the channel. A high-mobility polarization-induced bulk channel charge is created by grading the channel region linearly from GaN to Al0.3Ga0.7N over a distance, e.g., 1000 Å. A polarization-doped field effect transistor (PolFET) was fabricated and tested under DC and RF conditions. A current density of 850 mA/mm and transconductance of 93 mS/mm was observed under DC conditions. Small-signal characterization of 0.7 μm gate length devices had a cutoff frequency, fτ=19 GHz, and a maximum oscillation of fmax=46 GHz. The PolFETs perform better than comparable MESFETs with impurity-doped channels, and are suitable for high microwave power applications. An important advantage of these devices over AlGaN/GaN HEMTs is that the transconductance vs. gate voltage profile can be tailored by compositional grading for better large-signal linearity.

摘要翻译： 新型GaN / AlGaN金属半导体场效应晶体管（MESFET）结构在通道中没有任何杂质掺杂生长。 通过在一定距离（例如）1000处将通道区域从GaN线性地分级至Al 0.3 Ga 0.7 N来产生高迁移率极化诱导的体沟道电荷。 在DC和RF条件下制造和测试偏振掺杂场效应晶体管（PolFET）。 在直流条件下观察到电流密度为850mA / mm，跨导为93mS / mm。 0.7mm门极长度器件的小信号表征具有截止频率ftau = 19GHz，fmax = 46GHz的最大振荡。 PolFET比具有杂质掺杂通道的可比MESFET性能更好，适用于高微波功率应用。 这些器件对AlGaN / GaN HEMT的一个重要优点是跨导与栅极电压分布可以通过组合分级来定制，以获得更好的大信号线性度。