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    Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an element
    3.
    发明授权
    Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an element 有权
    三层磁性元件，磁场传感器，磁存储器以及使用这种元件的磁逻辑门

    公开(公告)号：US08513944B2

    公开(公告)日：2013-08-20

    申请号：US12903519

    申请日：2010-10-13

    申请人： Bernard Rodmacq ,  Stéphane Auffret ,  Bernard Dieny ,  Lavinia Elena Nistor

    发明人： Bernard Rodmacq ,  Stéphane Auffret ,  Bernard Dieny ,  Lavinia Elena Nistor

    IPC分类号： G01R33/07 ,  G01R33/02

    CPC分类号： H01L43/06 ,  B82Y25/00 ,  G01R33/098 ,  G11C11/18 ,  H01F10/3218 ,  H01F10/3236 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/14

    摘要： A three-layer magnetic element comprises, on a substrate, a first oxide, hydride or nitride layer O having a metal magnetic layer M mounted thereon, the latter having either a second oxide, hydride or nitride layer O′, or a non-ferromagnetic metal layer M′ mounted thereon. Layer M is continuous, has a thickness of 1 to 5 nm and the magnetization thereof is parallel to the layer plane in the absence of layers O and O′. There is, for a range of temperature equal to or greater than ambient temperature, interfacial magnetic anisotropy perpendicular to the layer plane on interfaces O/M and M/O′ that is capable of decreasing the effective demagnetizing field of layer M or orienting the magnetization of layer M in a manner substantially perpendicular to the layer plane.

    摘要翻译： 三层磁性元件在衬底上包括其上安装有金属磁性层M的第一氧化物，氢化物或氮化物层O，其具有第二氧化物，氢化物或氮化物层O'或非铁磁性层 金属层M'。 层M是连续的，具有1至5nm的厚度，并且其磁化在不存在层O和O'的情况下平行于层平面。 对于等于或大于环境温度的温度范围，界面O / M和M / O'上的垂直于层平面的界面磁各向异性能够降低层M的有效去磁场或使磁化 层M以基本上垂直于层平面的方式。

    Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconductor layer alternatively of magnetic material
    4.
    发明授权
    Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconductor layer alternatively of magnetic material 有权
    具有导电磁性材料的自旋阀磁阻器件在磁性材料的电介质或半导体层中桥接

    公开(公告)号：US07830640B2

    公开(公告)日：2010-11-09

    申请号：US12271734

    申请日：2008-11-14

    申请人： Bernard Dieny ,  Bernard Rodmacq ,  Franck Ernult

    发明人： Bernard Dieny ,  Bernard Rodmacq ,  Franck Ernult

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11C11/161 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/08 ,  Y10T29/49044

    摘要： Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges at least partially passing through a thickness of the dielectric or semiconducting layer, the bridges configured to locally concentrate current that passes transversely through the stack; and means for circulating a current in the spin valve transverse to the plane of the layers, characterised in that the dielectric or semiconducting layer with electrically conducting bridges is arranged inside one of the magnetic layers.

    摘要翻译： 磁阻器件包括由包括至少两个磁性层的层叠层形成的自旋阀，其磁化方向的相对取向能够在磁场的影响下变化; 至少一个不连续的电介质或半导电层，其具有至少部分地穿过电介质或半导体层的厚度的导电桥，所述桥被配置为局部集中横穿所述叠层的电流; 以及用于使旋转阀中的电流横向于层的平面循环的装置，其特征在于具有导电桥的电介质层或半导电层布置在一个磁层内。

    Spin Valve Magnetoresistive Device With Conductive-Magnetic Material Bridges In A Dielectric Or Semiconductor Layer Alternatively Of Magnetic Material
    7.
    发明申请
    Spin Valve Magnetoresistive Device With Conductive-Magnetic Material Bridges In A Dielectric Or Semiconductor Layer Alternatively Of Magnetic Material 有权
    带有导电磁性材料的旋转阀磁阻器件介质或半导体层中的磁性材料

    公开(公告)号：US20090290266A1

    公开(公告)日：2009-11-26

    申请号：US12271734

    申请日：2008-11-14

    申请人： Bernard Dieny ,  Bernard Rodmacq ,  Franck Ernult

    发明人： Bernard Dieny ,  Bernard Rodmacq ,  Franck Ernult

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11C11/161 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/08 ,  Y10T29/49044

    摘要： Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges at least partially passing through a thickness of the dielectric or semiconducting layer, the bridges configured to locally concentrate current that passes transversely through the stack; and means for circulating a current in the spin valve transverse to the plane of the layers, characterised in that the dielectric or semiconducting layer with electrically conducting bridges is arranged inside one of the magnetic layers.

    摘要翻译： 磁阻器件包括由包括至少两个磁性层的层叠层形成的自旋阀，其磁化方向的相对取向能够在磁场的影响下变化; 至少一个不连续的电介质或半导电层，其具有至少部分地穿过所述电介质或半导体层的厚度的导电桥，所述桥被配置为局部集中横穿所述堆叠的电流; 以及用于使旋转阀中的电流横向于层的平面循环的装置，其特征在于具有导电桥的电介质层或半导电层布置在一个磁层内。

    MAGNETIC RECORDING MEDIUM
    9.
    发明申请
    MAGNETIC RECORDING MEDIUM 失效
    磁记录介质

    公开(公告)号：US20100284104A1

    公开(公告)日：2010-11-11

    申请号：US12743671

    申请日：2008-11-20

    申请人： Bernard Dieny ,  Jérôme Moritz ,  Bernard Rodmacq

    发明人： Bernard Dieny ,  Jérôme Moritz ,  Bernard Rodmacq

    IPC分类号： G11B5/02 ,  G11B5/33

    CPC分类号： G11B5/855 ,  B82Y10/00 ,  G11B5/66 ,  G11B5/743 ,  G11B5/82

    摘要： The present invention relates to a magnetic recording medium (100). The invention finds a particularly interesting application in the field of data stored on hard disks. The medium (100) comprises an assembly of magnetic zones disposed on a substrate (102), each magnetic zone comprising at least one first (C′1) and one second (C′2) stacked magnetic layers separated from each other by a non-magnetic layer (NM′). In addition, said first magnetic layer (C′1) presents magnetization substantially oriented parallel to the plane of said substrate (102) and said second magnetic layer (C′2) presents magnetization substantially oriented perpendicular to the plane of said substrate (102).

    摘要翻译： 本发明涉及一种磁记录介质（100）。 本发明在存储在硬盘上的数据领域中发现了一个特别有趣的应用。 介质（100）包括设置在基板（102）上的磁区的组件，每个磁区包括至少一个第一（C'1）和一个第二（C'2）堆叠的磁性层， - 磁性层（NM'）。 另外，所述第一磁性层（C'1）具有平行于所述衬底（102）的平面大致取向的磁化，并且所述第二磁性层（C'2）具有垂直于所述衬底（102）平面的大致取向的磁化， 。

    Magnetic device having perpendicular magnetization and interaction compensating interlayer
    10.
    发明授权
    Magnetic device having perpendicular magnetization and interaction compensating interlayer 有权
    具有垂直磁化和相​​互作用补偿中间层的磁性装置

    公开(公告)号：US07772659B2

    公开(公告)日：2010-08-10

    申请号：US11876045

    申请日：2007-10-22

    申请人： Bernard Rodmacq ,  Vincent Baltz ,  Alberto Bollero ,  Bernard Dieny

    发明人： Bernard Rodmacq ,  Vincent Baltz ,  Alberto Bollero ,  Bernard Dieny

    IPC分类号： H01L21/00 ,  H01L29/82

    CPC分类号： G11C11/16 ,  G11C11/1675 ,  G11C11/5607

    摘要： The magnetic device comprises a least two layers made of a magnetic material that are separated by at least one interlayer made of a non-magnetic material. The layers made of a magnetic material each have magnetization oriented substantially perpendicular to the plane of the layers. The layer of non-magnetic material induces an antiferromagnetic coupling field between the layers made of a magnetic material, the direction and amplitude of this field attenuating the effects of the ferromagnetic coupling field of magnetostatic origin that occurs between the magnetic layers.

    摘要翻译： 磁性装置包括由磁性材料制成的至少两层，其由至少一层由非磁性材料制成的中间隔开。 由磁性材料制成的层各自具有基本上垂直于层平面的磁化。 非磁性材料层在由磁性材料制成的层之间引起反铁磁耦合场，该场的方向和振幅衰减了在磁层之间发生的静磁原点的铁磁耦合场的影响。