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    High resistance ionic current source
    5.
    发明授权
    High resistance ionic current source 有权
    高电阻离子电流源

    公开(公告)号：US07622024B1

    公开(公告)日：2009-11-24

    申请号：US11040359

    申请日：2005-01-20

    申请人： Steven T. Mayer ,  Jonathan D. Reid

    发明人： Steven T. Mayer ,  Jonathan D. Reid

    IPC分类号： C25D17/00 ,  C25D5/00

    CPC分类号： C25D17/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  H01L21/2885 ,  Y10S204/07

    摘要： A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer.

    摘要翻译： 将基本上均匀的金属层电镀在其上具有种子层的工件上。 这是通过使用“高电阻离子电流源”来实现的，其通过将高电阻膜（例如，微孔陶瓷或微波玻璃元件）放置在靠近晶片来解决端子问题，从而使系统的电阻变化。 因此，膜近似于恒定电流源。 通过保持晶片靠近膜表面，从膜顶部到表面的离子电阻远小于对晶片边缘的离子路径电阻，基本上补偿薄金属膜中的薄层电阻并引导附加电流 在晶片的中心和中间。

    Anneal of ruthenium seed layer to improve copper plating
    6.
    发明授权
    Anneal of ruthenium seed layer to improve copper plating 有权
    钌种子层退火以改善镀铜

    公开(公告)号：US07442267B1

    公开(公告)日：2008-10-28

    申请号：US10999838

    申请日：2004-11-29

    申请人： Eric G. Webb ,  Jonathan D. Reid ,  Seyang Park ,  Johanes H. Sukamto

    发明人： Eric G. Webb ,  Jonathan D. Reid ,  Seyang Park ,  Johanes H. Sukamto

    IPC分类号： C22F1/14

    CPC分类号： C22F1/14 ,  C23C16/18 ,  C23C16/56 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874

    摘要： A ruthenium-containing thin film is formed. Typically, the ruthenium-containing thin film has a thickness in a range of about from 1 nm to 20 nm. The ruthenium-containing thin film is annealed in an oxygen-free atmosphere, for example, in N2 forming gas, at a temperature in a range of about from 100° C. to 500° C. for a total time duration of about from 10 seconds to 1000 seconds. Thereafter, copper or other metal is deposited by electroplating or electroless plating onto the annealed ruthenium-containing thin film. In some embodiments, the ruthenium-containing thin film is also treated by UV radiation.

    摘要翻译： 形成含钌的薄膜。 通常，含钌薄膜的厚度在约1nm至20nm的范围内。 含钌的薄膜在无氧气氛中，例如在N 2 O 2形成气体中，在约100℃至500℃的温度范围内退火，以便 总时间约10秒至1000秒。 此后，通过电镀或化学镀将铜或其它金属沉积到退火的含钌薄膜上。 在一些实施方案中，含钌的薄膜也通过UV辐射处理。

    Electroplating using DC current interruption and variable rotation rate
    8.
    发明授权
    Electroplating using DC current interruption and variable rotation rate 有权
    电镀采用直流电流中断和可变转速

    公开(公告)号：US06884335B2

    公开(公告)日：2005-04-26

    申请号：US10441607

    申请日：2003-05-20

    申请人： Eric G. Webb ,  Jonathan D. Reid ,  John H. Sukamto ,  Sesha Varadarajan ,  Margolita M. Pollack ,  Bryan L. Buckalew ,  Tariq Majid

    发明人： Eric G. Webb ,  Jonathan D. Reid ,  John H. Sukamto ,  Sesha Varadarajan ,  Margolita M. Pollack ,  Bryan L. Buckalew ,  Tariq Majid

    IPC分类号： C25D5/04 ,  C25D5/18 ,  C25D7/12 ,  H01L21/288

    CPC分类号： C25D5/04 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  Y10S428/935 ,  Y10T428/12993

    摘要： A negative bias is applied to an integrated circuit wafer immersed in an electrolytic plating solution to generate a DC current. After about ten percent to sixty percent of the final layer thickness has formed in a first plating time, biasing is interrupted during short pauses during a second plating time to generate substantially zero DC current. The pauses are from about 2 milliseconds to 5 seconds long, and typically about 10 milliseconds to 500 milliseconds. Generally, about 2 pauses to 100 pauses are used, and typically about 3 pauses to 15 pauses. Generally, the DC current density during the second plating time is greater than the DC current density during the initial plating time. Typically, the integrated circuit wafer is rotated during electroplating. Preferably, the wafer is rotated at a slower rotation rate during the second plating time than during the first plating time.

    摘要翻译： 将负偏压施加到浸在电解电镀溶液中的集成电路晶片以产生DC电流。 在第一电镀时间中已经形成最终层厚度的约百分之十到百分之六十之后，在第二电镀时间期间的短暂停期间偏压中断，以产生基本为零的DC电流。 停顿时间为大约2毫秒到5秒，通常为大约10毫秒到500毫秒。 通常，使用约2次暂停至100次暂停，通常约3次暂停至15次停顿。 通常，第二电镀时间期间的直流电流密度大于初始电镀时间期间的直流电流密度。 通常，电镀期间集成电路晶片旋转。 优选地，在第二电镀时间期间，晶片以比第一电镀时间期间更慢的旋转速度旋转。