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1.发明申请Method for projection of a circuit pattern, which is arranged on a mask, onto a semiconductor wafer 有权将布置在掩模上的电路图案投影到半导体晶片上的方法公开(公告)号：US20050050512A1
公开(公告)日：2005-03-03
申请号：US10917426
申请日：2004-08-13
申请人： Bernd Kochan , Juergen Karl , Michael Kubis , Norbert Haase
发明人： Bernd Kochan , Juergen Karl , Michael Kubis , Norbert Haase
IPC分类号： G03F7/20 , G06T7/00 , G06F17/50 , G03C5/00 , G03F9/00 , G06G7/62 , G06K9/00 , G21K5/10 , H01J37/08 , H01Q9/28
CPC分类号： G03F7/70991 , G03F7/705 , G03F7/70616 , G06T7/0004 , G06T2207/30148
摘要： A simulation is carried out of a projection based on an electronically stored circuit pattern and adjustable projection parameters and optical parameters which characterize the specific characteristics of a projection apparatus. Positions at which it is predicted that side lobes will occur in the event of an actual projection are identified in the calculated circuit pattern. The positions of the side lobes are transmitted to a manufacturing unit and are recorded in a measurement program. A wafer, which has been exposed by a mask, is inspected for side lobes, at least at precisely those transmitted positions using the measurement program. The adjustable projection parameters are adapted, a radiation-sensitive layer is removed from and reapplied to the wafer and the projection is repeated with the adapted projection parameters depending on the detection result. The control process is repeated until the side lobes have been completely prevented.
摘要翻译： 基于电子存储的电路图案和表征投影设备的特定特性的可调投影参数和光学参数的投影进行模拟。 在计算出的电路图案中，可以预测在实际投影的情况下发生旁瓣的位置。 旁瓣的位置被传送到制造单元并记录在测量程序中。 已经通过掩模曝光的晶片至少在使用测量程序的那些传输位置处被检查为旁瓣。 可调节的投影参数被适配，辐射敏感层被去除并重新应用于晶片，并且根据检测结果，利用适配的投影参数重复投影。 重复控制过程，直到旁瓣完全被防止。
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2.发明授权Method for projection of a circuit pattern, which is arranged on a mask, onto a semiconductor wafer 有权将布置在掩模上的电路图案投影到半导体晶片上的方法公开(公告)号：US07252913B2
公开(公告)日：2007-08-07
申请号：US10917426
申请日：2004-08-13
申请人： Bernd Kochan , Juergen Karl , Michael Kubis , Norbert Haase
发明人： Bernd Kochan , Juergen Karl , Michael Kubis , Norbert Haase
CPC分类号： G03F7/70991 , G03F7/705 , G03F7/70616 , G06T7/0004 , G06T2207/30148
摘要： A simulation is carried out of a projection based on an electronically stored circuit pattern and adjustable projection parameters and optical parameters which characterize the specific characteristics of a projection apparatus. Positions at which it is predicted that side lobes will occur in the event of an actual projection are identified in the calculated circuit pattern. The positions of the side lobes are transmitted to a manufacturing unit and are recorded in a measurement program. A wafer, which has been exposed by a mask, is inspected for side lobes, at least at precisely those transmitted positions using the measurement program. The adjustable projection parameters are adapted, a radiation-sensitive layer is removed from and reapplied to the wafer and the projection is repeated with the adapted projection parameters depending on the detection result. The control process is repeated until the side lobes have been completely prevented.
摘要翻译： 基于电子存储的电路图案和表征投影设备的特定特性的可调投影参数和光学参数的投影进行模拟。 在计算出的电路图案中，可以预测在实际投影的情况下发生旁瓣的位置。 旁瓣的位置被传送到制造单元并记录在测量程序中。 已经通过掩模曝光的晶片至少在使用测量程序的那些传输位置处被检查为旁瓣。 可调节的投影参数被适配，辐射敏感层被去除并重新应用于晶片，并且根据检测结果，利用适配的投影参数重复投影。 重复控制过程，直到旁瓣完全被防止。
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